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Velkos, Georgios,Krylov, Denis S.,Kirkpatrick, Kyle,Spree, Lukas,Dubrovin, Vasilii,Bü,chner, Bernd,Avdoshenko, Stanislav M.,Bezmelnitsyn, Valeriy,Davis, Sean,Faust, Paul,Duchamp, James,Dorn, Harry John Wiley and Sons Inc. 2019 Angewandte Chemie. international edition Vol.58 No.18
<P><B>Abstract</B></P><P>The azafullerene Tb<SUB>2</SUB>@C<SUB>79</SUB>N is found to be a single‐molecule magnet with a high 100‐s blocking temperature of magnetization of 24 K and large coercivity. Tb magnetic moments with an easy‐axis single‐ion magnetic anisotropy are strongly coupled by the unpaired spin of the single‐electron Tb−Tb bond. Relaxation of magnetization in Tb<SUB>2</SUB>@C<SUB>79</SUB>N below 15 K proceeds via quantum tunneling of magnetization with the characteristic time <I>τ</I><SUB>QTM</SUB>=16 462±1230 s. At higher temperature, relaxation follows the Orbach mechanism with a barrier of 757±4 K, corresponding to the excited states, in which one of the Tb spins is flipped.</P>
조성재,Shinichi O’uchi,Kazuhiko Endo,김상완,Younghwan Son,Meishoku Masahara,James S. Harris, Jr.,박병국,강인만 대한전자공학회 2010 Journal of semiconductor technology and science Vol.10 No.4
In this work, reliable methodology for device design is presented. Based on this method, the underlap length has been optimized for minimizing the gateinduced drain leakage (GIDL) in a 22-nm node 4-terminal (4-T) silicon-on-insulator (SOI) fin-shaped field effect transistor (FinFET) by TCAD simulation. In order to examine the effects of underlap length on GIDL more realistically, doping profile of the source and drain (S/D) junctions, carrier lifetimes, and the parameters for a band-to-band tunneling (BTBT)model have been experimentally extracted from the devices of 90-nm channel length as well as pnjunction test element groups (TEGs). It was confirmed that the underlap length should be near 15nm to suppress GIDL effectively for reliable low standby power (LSTP) operation.
Jae Sung Lee,Seongjae Cho,Byung-Gook Park,James S. Harris,In Man Kang 대한전자공학회 2012 Journal of semiconductor technology and science Vol.12 No.2
In this paper, we present the radiofrequency (RF) modeling for gate-all-around (GAA) junctionless (JL) MOSFETs with 30-㎚ channel length. The presented non-quasi-static (NQS) model has included the gate-bias-dependent components of the source and drain (S/D) resistances. RF characteristics of GAA junctionless MOSFETs have been obtained by 3-dimensional (3D) device simulation up to 1 ㎔. The modeling results were verified under bias conditions of linear region (VGS = 1 V, VDS = 0.5 V) and saturation region (VGS = VDS = 1 V). Under these conditions, the root-mean-square (RMS) modeling error of Y₂₂-parameters was calculated to be below 2.4%, which was reduced from a previous NQS modeling error of 10.2%.
Lee, Jae-Sung,Cho, Seong-Jae,Park, Byung-Gook,Harris, James S. Jr.,Kang, In-Man The Institute of Electronics and Information Engin 2012 Journal of semiconductor technology and science Vol.12 No.2
In this paper, we present the radio-frequency (RF) modeling for gate-all-around (GAA) junctionless (JL) MOSFETs with 30-nm channel length. The presented non-quasi-static (NQS) model has included the gate-bias-dependent components of the source and drain (S/D) resistances. RF characteristics of GAA junctionless MOSFETs have been obtained by 3-dimensional (3D) device simulation up to 1 THz. The modeling results were verified under bias conditions of linear region (VGS = 1 V, VDS = 0.5 V) and saturation region (VGS = VDS = 1 V). Under these conditions, the root-mean-square (RMS) modeling error of $Y_{22}$-parameters was calculated to be below 2.4%, which was reduced from a previous NQS modeling error of 10.2%.
Cho, Seong-Jae,O'uchi, Shinichi,Endo, Kazuhiko,Kim, Sang-Wan,Son, Young-Hwan,Kang, In-Man,Masahara, Meishoku,Harris, James S.Jr,Park, Byung-Gook The Institute of Electronics and Information Engin 2010 Journal of semiconductor technology and science Vol.10 No.4
In this work, reliable methodology for device design is presented. Based on this method, the underlap length has been optimized for minimizing the gateinduced drain leakage (GIDL) in a 22-nm node 4-terminal (4-T) silicon-on-insulator (SOI) fin-shaped field effect transistor (FinFET) by TCAD simulation. In order to examine the effects of underlap length on GIDL more realistically, doping profile of the source and drain (S/D) junctions, carrier lifetimes, and the parameters for a band-to-band tunneling (BTBT) model have been experimentally extracted from the devices of 90-nm channel length as well as pnjunction test element groups (TEGs). It was confirmed that the underlap length should be near 15 nm to suppress GIDL effectively for reliable low standby power (LSTP) operation.
Seongjae Cho,Shinichi O’uchi,Kazuhiko Endo,Sang Wan Kim,Younghwan Son,In Man Kang,Meishoku Masahara,James S. Harris,Byung-Gook Park 대한전자공학회 2010 Journal of semiconductor technology and science Vol.10 No.4
In this work, reliable methodology for device design is presented. Based on this method, the underlap length has been optimized for minimizing the gateinduced drain leakage (GIDL) in a 22-㎚ node 4-terminal (4-T) silicon-on-insulator (SOI) fin-shaped field effect transistor (FinFET) by TCAD simulation. In order to examine the effects of underlap length on GIDL more realistically, doping profile of the source and drain (S/D) junctions, carrier lifetimes, and the parameters for a band-to-band tunneling (BTBT) model have been experimentally extracted from the devices of 90-㎚ channel length as well as pnjunction test element groups (TEGs). It was confirmed that the underlap length should be near 15 ㎚ to suppress GIDL effectively for reliable low standby power (LSTP) operation.
Trivalent M-related protein as a component of next generation group A streptococcal vaccines
Harry S. Courtney,Shannon E. Niedermeyer,Thomas A. Penfound,Claudia M. Hohn,Adam Greeley,James B. Dale 대한백신학회 2017 Clinical and Experimental Vaccine Research Vol.6 No.1
Purpose: There is a need to broaden protective coverage of M protein–based vaccines against group A streptococci (GAS) because coverage of the current 30-valent M protein vaccine does not extend to all emm types. An additional GAS antigen and virulence factor that could potentially extend vaccine coverage is M-related protein (Mrp). Previous work indicated that there are three structurally related families of Mrp (MrpI, MrpII, and MrpIII) and peptides of all three elicited bactericidal antibodies against multiple emm types. The purpose of this study was to determine if a recombinant form containing Mrp from the three families would evoke bactericidal antiserum and to determine if this antiserum could enhance the effectiveness of antisera to the 30-valent M protein vaccine. Materials and Methods: A trivalent recombinant Mrp (trMrp) protein containing N-terminal fragments from the three families (trMrp) was constructed, purified and used to immunize rabbits. Anti-trMrp sera contained high titers of antibodies against the trMrp immunogen and recombinant forms representing MrpI, MrpII, and MrpIII. Results: The antisera opsonized emm types of GAS representing each Mrp family and also opsonized emm types not covered by the 30-valent M protein–based vaccine. Importantly, a combination of trMrp and 30-valent M protein antiserum resulted in higher levels of opsonization of GAS than either antiserum alone. Conclusion: These findings suggest that trMrp may be an effective addition to future constructs of GAS vaccines.
조용범,조성재,박병국,James S. Harris, Jr. 대한전자공학회 2017 Journal of semiconductor technology and science Vol.17 No.5
Ge is on increasing demand in the advanced Si-compatible high-speed integrated circuits due to its high carrier mobilities. In particular, its hole mobility is much higher than those of other group-IV and III-V compound semiconductor materials. At the same time, Ge has the local minimum at the Γ valley, which enables the utilization for optical applications. The fact that Ge becomes a direct-bandgap semiconductor material by applying tensile strain can be a good merit in obtaining higher spontaneous radiation probability. However, engineering the electronic structure of Ge by external mechanical stress through stressors with different thermal expansion coefficients might require a complicated set of processes. Efforts were made to turn it into a direct-bandgap one by incorporating Sn. Carrier mobilities are further enhanced when Sn is substitutionally incorporated into the Ge matrix. Thus, advantageous features are expected in improving both optical and electrical performances. Furthermore, the small bandgap energy and bandgap tunability make Ge1-xSnx alloy a promising material for components making up the optical interconnect on Si platform including optical source of near-infrared wavelength. In this work, we study the electrical and optical characteristics of Ge1-xSnx alloy as a function of Sn content. To achieve this goal, ab initio calculations of energy-band structures of Ge1-xSnx with different Sn fractions have been carried out based on linearized augmented plane wave (LAPW) method with modified Becke-Johnson potential model for more accurate bandgap energy. Then, a novel coding method has been adopted for more reliable overall band structures. The minimum Sn content required for direct- and indirect-bandgap material transition of Ge1-xSnx, electrical and optical energy bandgaps to investigate the bandgap tunability, as well as effective masses, have been extracted as a function of Sn content. The transition point was found to be 6.9% and succinct reductions of effective masses of electron and hole have been confirmed.
Process Considerations for 80-GHz High-Performance p-i-n SiliconPhotodetectorforOpticalInterconnect
조성재,김형진,성민철,박병국,James S. Harris, Jr. 대한전자공학회 2012 Journal of semiconductor technology and science Vol.12 No.3
In this work, design considerations for highperformance silicon photodetector are thoroughly investi- gated. Besides the critical dimensions of device, guidelines for process architecture are suggested. Abiding by those criteria for improving both direct-current (DC) and alternating-current (AC) perfor- mances, a high-speed low-operation power silicon photodetector based on p-i-n structure for optical interconnect has been designed by device simulation. An f-3dB of 80 GHz at an operating voltage of 1 V was obtained.
Immune correlates of protection for dengue: State of the art and research agenda
Katzelnick, Leah C.,Harris, Eva,Baric, Ralph,Coller, Beth-Ann,Coloma, Josefina,Crowe Jr., James E.,Cummings Jr., Derek A.T.,Dean Jr., Hansi,de Silva Jr., Aravinda,Diamond Jr., Michael S.,Durbin Jr., A Elsevier 2017 Vaccine Vol.35 No.36
<P><B>Abstract</B></P> <P>Dengue viruses (DENV1-4) are mosquito-borne flaviviruses estimated to cause up to ∼400 million infections and ∼100 million dengue cases each year. Factors that contribute to protection from and risk of dengue and severe dengue disease have been studied extensively but are still not fully understood. Results from Phase 3 vaccine efficacy trials have recently become available for one vaccine candidate, now licensed for use in several countries, and more Phase 2 and 3 studies of additional vaccine candidates are ongoing, making these issues all the more urgent and timely. At the “<I>Summit on Dengue Immune Correlates of Protection</I>”, held in Annecy, France, on March 8–9, 2016, dengue experts from diverse fields came together to discuss the current understanding of the immune response to and protection from DENV infection and disease, identify key unanswered questions, discuss data on immune correlates and plans for comparison of results across assays/consortia, and propose a research agenda for investigation of dengue immune correlates, all in the context of both natural infection studies and vaccine trials.</P>