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Jalalah, M.,Faisal, M.,Bouzid, H.,Park, J.G.,Al-Sayari, S.A.,Ismail, A.A. Korean Society of Industrial and Engineering Chemi 2015 Journal of industrial and engineering chemistry Vol.30 No.-
α- and β-Bi<SUB>2</SUB>O<SUB>3</SUB> nanoparticles were synthesized in the presence of either urea or polyethylene glycol. The XRD, TEM, and Raman analysis indicated that α-(monoclinic) Bi<SUB>2</SUB>O<SUB>3</SUB> nanoparticles were obtained using either sol-gel or hydrothermal method in the presence of urea; however β-(tetragonal) phase of Bi<SUB>2</SUB>O<SUB>3</SUB> was formed using hydrothermal method in the presence of polyethylene glycol. The β-Bi<SUB>2</SUB>O<SUB>3</SUB> nanoparticles exhibited higher photocatalytic activity than α-Bi<SUB>2</SUB>O<SUB>3</SUB>. MB was completely photodegraded after 6h of visible light illumination using β-Bi<SUB>2</SUB>O<SUB>3</SUB> photocatalyst whereas only 30% was photodegraded using α-Bi<SUB>2</SUB>O<SUB>3</SUB>. The photodegradation rate of β-Bi<SUB>2</SUB>O<SUB>3</SUB> was 5.7 times greater than that α-Bi<SUB>2</SUB>O<SUB>3</SUB> nanoparticles.
Mohammed Jalalah,Adel A. Ismail,M. Faisal,Houcine Bouzid,Jea-Gun Park,S.A. Al-Sayari 한국공업화학회 2015 Journal of Industrial and Engineering Chemistry Vol.30 No.-
a- and b-Bi2O3 nanoparticles were synthesized in the presence of either urea or polyethylene glycol. TheXRD, TEM, and Raman analysis indicated that a-(monoclinic) Bi2O3 nanoparticles were obtained usingeither sol–gel or hydrothermal method in the presence of urea; however b-(tetragonal) phase of Bi2O3was formed using hydrothermal method in the presence of polyethylene glycol. The b-Bi2O3nanoparticles exhibited higher photocatalytic activity than a-Bi2O3. MB was completely photodegradedafter 6 h of visible light illumination using b-Bi2O3 photocatalyst whereas only 30% was photodegradedusing a-Bi2O3. The photodegradation rate of b-Bi2O3 was 5.7 times greater than that a-Bi2O3nanoparticles.
Correlating nano black spots and optical stability in mixed halide perovskite quantum dots
Ko, Yun-Hyuk,Prabhakaran, Prem,Jalalah, Mohammed,Lee, Seung-Jae,Lee, Kwang-Sup,Park, Jea-Gun The Royal Society of Chemistry 2018 Journal of materials chemistry. C, Materials for o Vol.6 No.29
<P>Lead trihalide perovskite nanomaterials are widely studied due to their remarkable optoelectronic properties. Despite their outstanding and demonstrated potential, these materials have been kept from practical application due to their crippling instability in ambient conditions. From electron microscopy studies of this series of quantum dots (QDs) we demonstrate that the onset of degradation in optical properties coincides with the appearance of nano black spots (NBSs) on the QDs. Elemental mapping using electron microscopy revealed the NBSs to be areas with higher concentration of lead. We have looked at the possible mechanisms to explain NBSs and found that they may arise due to two very different pathways. The first one is due to crystal growth initiated by excess reactants and the second is due to chemical degradation of the QD surface. Further we have invoked the well known geometrical stability criterion for perovskites, Goldschmidt's tolerance factor to predict the appearance of NBSs and the onset of optical instability of CsPbBr3−xIx QDs. This correlation can be used as a criterion to aid the selection of more optically stable perovskite QDs for practical applications.</P>
이종선,김동원,김혜지,진수민,송명진,권기현,박재근,Mohammed Jalalah,Ali Al-Hajry 한국물리학회 2018 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.72 No.1
The Conductive-bridge random-access memory (CBRAM) cell is a promising candidate for a terabit-level non-volatile memory due to its remarkable advantages. We present for the first time TiN as a diffusion barrier in CBRAM cells for enhancing their reliability. CuO solid-electrolyte-based CBRAM cells implemented with a 0.1-nm TiN liner demonstrated better non-volatile memory characteristics such as ~ 106 AC write/erase endurance cycles with 100-μs AC pulse width and a long retention time of ~ 7.4-years at 85 °C. In addition, the analysis of Ag diffusion in the CBRAM cell suggests that the morphology of the Ag filaments in the electrolyte can be effectively controlled by tuning the thickness of the TiN liner. These promising results pave the way for faster commercialization of terabit-level non-volatile memories.
Lee, Jong-Sun,Kim, Dong-Won,Kim, Hea-Jee,Jin, Soo-Min,Song, Myung-Jin,Kwon, Ki-Hyun,Park, Jea-Gun,Jalalah, Mohammed,Al-Hajry, Ali 한국물리학회 2018 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol. No.
<P>The Conductive-bridge random-access memory (CBRAM) cell is a promising candidate for a terabit-level non-volatile memory due to its remarkable advantages. We present for the first time TiN as a diffusion barrier in CBRAM cells for enhancing their reliability. CuO solid-electrolyte-based CBRAM cells implemented with a 0.1-nm TiN liner demonstrated better non-volatile memory characteristics such as similar to 10(6) AC write/erase endurance cycles with 100-mu s AC pulse width and a long retention time of similar to 7.4-years at 85 A degrees C. In addition, the analysis of Ag diffusion in the CBRAM cell suggests that the morphology of the Ag filaments in the electrolyte can be effectively controlled by tuning the thickness of the TiN liner. These promising results pave the way for faster commercialization of terabit-level non-volatile memories.</P>