http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Surface planarization issues of metal foil substrates for flexible electronics applications
Seungjun Chung,Jaewook Chung,Yongtaek Hong 대한전자공학회 2007 ITC-CSCC :International Technical Conference on Ci Vol.2007 No.7
Surface planarization capability and electrical and thermal stability of several low-k materials have been tested for different metal foil substrates including kovar, invar, and stainless steel foil substrates. Atomic force microscope measurement showed a significant reduction of the surface roughness after applying an organic planarization layer on the metal foil substrates. Capacitance-voltage and current-voltage behavior under different thermal and electrical stress conditions for flexible electronics applications showed good thermal and electrical stabilities of the organic planarization layers.
카먼레일 디젤엔진에서 후분사 변화가 배출가스 성분 및 온도 변화에 미치는 영향에 대한 실험적 연구
정재욱(Jaewook Chung),장동훈(Donghoon Chang),박정규(Jungkyu Park),전광민(Kwangmin Chun) 한국자동차공학회 2003 한국자동차공학회 춘 추계 학술대회 논문집 Vol.- No.-
The post injection effect to enhance aftertreatment devices' performance is essential to meet future stringent emission standards by controlling exhaust gas temperature and emission pollutants. The test has been made with commercial common rail diesel engine by post injection manipulation, to optimize exhaust gas temperature while guarantee low fuel penalty. The optimization was done at 1500,2000 and 2500[rpm] for 2, 4[bar] condition which show low exhaust gas temperature. The main purpose of this test is dedicated to understand mechanism of exhaust gas temperature rise while optimizing.<br/>
Jaewook Lee,Sungwoo Jun,Jaeman Jang,Hagyoul Bae,Hyeongjung Kim,Jong Won Chung,Sung-Jin Choi,Dae Hwan Kim,Jiyoul Lee,Dong Myong Kim IEEE 2013 IEEE electron device letters Vol.34 No.12
<P>We report a fully subthreshold current-based technique for characterization of subgap density of states [DOS:g(E)] with consistent mapping of the surface potential (ψ<SUB>S</SUB>) in p-channel polymer-based thin-film transistors (PTFTS). Initially, we propose a technique for extraction of the DOS over the bandgap using the gate voltage (V<SUB>GS</SUB>)-dependent ideality factor [m(V<SUB>GS</SUB>)] from the transfer characteristics of the PTFTs under subthreshold operation. We also propose a technique for a consistent nonlinear mapping of V<SUB>GS</SUB> to the subgap energy level by converting m(V<SUB>GS</SUB>) to ψ<SUB>S</SUB>. Through combining the two methods, the exponential tail and deep g(E) are obtained to be N<SUB>TD</SUB>=1·1×10<SUP>17</SUP> [eV<SUP>-1</SUP>·cm<SUP>-3</SUP>], kT<SUB>TD</SUB>=0·035 [eV], N<SUB>DD</SUB>=9·8×10<SUP>16</SUP> [eV<SUP>-1</SUP>·cm<SUP>-3</SUP>], and kT<SUB>DD</SUB>=0·80 [eV] over the bandgap.</P>
Transfer-printable micropatterned fluoropolymer-based triboelectric nanogenerator
Ha, Jaewook,Chung, Jihoon,Kim, SeongMin,Kim, Jong Hun,Shin, Seungmin,Park, Jeong Young,Lee, Sangmin,Kim, Jin-Baek Elsevier 2017 Nano energy Vol.36 No.-
<P><B>Abstract</B></P> <P>Triboelectric nanogenerators (TENG) are increasingly considered as a promising energy harvesting system due to high output performance from various wasted energy sources. Numerous studies addressing the TENG configuration improve the performance of these devices by optimizing the paired triboelectric materials and structural geometry. Here, poly(1<I>H</I>,1<I>H</I>,2<I>H</I>,2<I>H</I>-perfluorodecyl methacrylate) (PFDMA) fluoropolymer is adopted as a novel negative tribo-material for application to a TENG, as it is at the topmost negative position of the triboelectric series and it is possible to tune the surface roughness under mild conditions. The intrinsic properties are examined and systematic measurements are carried out with the goal of applying the material to a TENG. PFDMA is suitable for application to a TENG, because PFDMA-TENG exhibits a high voltage, current, and power density of 68V, 6.68μA, and 150μW, respectively, under a load of 500MΩ. Moreover, a PFDMA film offers two distinctive advantages making it ideal for application to a TENG: transmittance higher than 98% even with a relatively high surface roughness, and transfer printing on diverse substrates. The results indicate that PFDMA is a novel negative tribo-material candidate for the fabrication of a TENG with superior triboelectric performance by controlling the surface charge density and morphology.</P> <P><B>Highlights</B></P> <P> <UL> <LI> The new PFDMA shows strategy of fabricating roughened surface under mild condition.. </LI> <LI> This is the first analysis on effective work function and electrical output of PFDMA. </LI> <LI> The super-hydrophobic surface of PFDMA shows energy harvesting from water drops. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Contact Resistance of Inkjet-Printed Silver Source–Drain Electrodes in Bottom-Contact OTFTs
Seungjun Chung,Jaewook Jeong,Donghyun Kim,Yunhwan Park,Changhee Lee,Yongtaek Hong IEEE 2012 Journal of display technology Vol.8 No.1
<P>In this paper, we report contact resistance analysis between inkjet-printed silver source-drain (S/D) electrodes and organic semiconductor layer in bottom-contact organic thin-film transistors (OTFTs) using transmission line method (TLM). Inkjet-printed silver electrodes, spin-coated PVP and evaporated pentacene were used as gate and S/D electrodes, gate dielectric layer and semiconductor layer, respectively. On a common gate electrode, S/D electrodes with various channel length from 15 to 111 m were printed for TLM analysis. The same bottom-contact OTFT with evaporated silver S/D electrodes was also fabricated for reference. We extracted contact resistances of 1.79 M cm and 0.55 M cm for inkjet-printed and evaporated silver electrodes, respectively. Higher contact resistance for inkjet-printed silver electrodes can be explained in terms of their relatively poor surface properties at electrode edge that can cause small pentacene molecule grain or slight oxidation of surface during the printed silver sintering process.</P>
이재욱(Jaewook Lee),안성진(Seongjin Ahn),정진욱(Jinwook Chung) 한국산업응용수학회 2006 Journal of the Korean Society for Industrial and A Vol.10 No.1-1
본 논문에서는 유비쿼터스 컴퓨팅 환경에서 규칙 기반의 네트워크 장애 복구 시스템을 제안한다. 이 시스템은 유비쿼터스 컴퓨팅 환경에서 네트워크에 장애가 발생하였을 때, 정해진 규칙을 기반으로 장애를 스스로 복구할 수 있는 장애 관리 시스템이다. 시스템에 적용되는 규칙들을 네트워크 장애의 원인으로 분류하여 제시하였다. 그리고 본 논문에서는 네트워크 장애 복구 시스템이 각 상황에 맞게 규칙이 적용됨을 시뮬레이션을 통해 증명하였다. This paper introduces rule-based reasoning (RBR) based self-recovery system for network fault in ubiquitous computing. This system is fault management system for fault recovery of rule-based for self-recovery in ubiquitous computing environment. We proposed rules of network fault recovery applied the system as a distinguished reason of network fault. And, in this paper, the network fault self-recovery system proved the rules that applied each situation through the simulation.