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Characterization of Ultra-Thin HfO2 Gate Oxide Prepared by Using Atomic Layer Deposition
TaehoLee,안진호,JaeminOh,YangdoKim,Young-BaeKim,Duck-KyunChoi,JaehakJung 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
Ultra-thin hafnium-oxide lms were deposited by using atomic layer deposition. The impurity distribution and the lm properties were studied in the deposition temperature range between 200 C and 400 C. Suppressed crystallization with eective Cl impurity reduction was obtained at medium temperature (300 C), which resulted in a hafnium-oxide lm with a low leakage current (2.06*10-7A/cm2 at -2.0 MV/cm) and a small equivalent oxide thickness value (23.9 A) at the same time.