http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
The two-scale analysis method for bodies with small periodic configurations
Cui, J.Z.,Shih, T.M.,Wang, Y.L. Techno-Press 1999 Structural Engineering and Mechanics, An Int'l Jou Vol.7 No.6
The mechanical behaviours of the structure made from composite materials or the structure with periodic configurations depend not only on the macroscopic conditions of structure, but also on the detailed configurations. The Two-Scale Analysis (TSA) method for these structures, which couples the macroscopic characteristics of structure with its detailed configurations, is configurations, is presented for 2 or 3 dimensional case in this paper. And the finite element algorithms based on TSA are developed, and some results of numerical experiments are given. They show that TSA with its finite element algorithms is more effective.
J.L. Cui,Y.M. Yan,H. Fu,X.J. Zhang,Y.L. Gao,Y. Deng 한국물리학회 2012 Current Applied Physics Vol.12 No.1
We have performed a comparative investigation of the series compounds (InSb)nCum to assess the roles of Cu addition on the thermoelectric properties and nanostructuring in bulk InSb. Detailed temperature dependent transport properties including electrical conductivity, the Seebeck coefficient, and thermal conductivity are presented. The Seebeck coefficients of In20Sb20Cu (m:n ¼ 1:20) are increased by 13percent in magnitude if compared to those of InSb, which is responsible for the 22 percent enhancement in the highest ZT value at 687 K. Although the magnitudes of kL are larger than those of InSb over the entire temperature range, a remarkable reduction in lattice thermal conductivities (kL) was observed with measuring temperature elevation. Such changes are mainly due to the precipitation of a large number of Cu9In4 nanoparticles with the size of smaller than 5 nm, dispersed in the matrix observed using high resolution transmission electron microscopy (HRTEM) images.
Thermoelectric properties in p-type nanostructured Ge-doped Sb100GeTe150 alloy
J.L. Cui,H. Fu,X.L. Liu,D.Y. Chen,W. Yang 한국물리학회 2009 Current Applied Physics Vol.9 No.5
Ge-doped Sb100GeTe150 alloy were prepared using spark plasma sintering technique, and its thermoelectric properties were evaluated over the temperature range 318–492 K. Through XRD analysis, we observed the same single phase as Sb2Te3 and weakened diffraction peaks. Rietveld refinement reveals that there is 0.96 at.% Ge that occupies in the Sb sites, leading to the lattice distortion in the Sb–Te crystal. High-resolution TEM images show that there are many nanodomains randomly distributed in the matrix with a large amount of amorphous phase adjoined. Measurements indicated that the Seebeck coefficients (α) increase and the electrical and thermal conductivities decrease with temperature in the entire temperature range. The maximum α value reaches 135 μV/K at 492 K, and the thermal conductivities are about 0.3 W/mK lower than those of present Sb2Te3 for the corresponding temperatures. The highest thermoelectric figure of merit ZT for the nanostructured alloy Sb100GeTe150 is 0.84 at 492 K, whereas that of the currently prepared Sb2Te3 is 0.74 at the corresponding temperature. Ge-doped Sb100GeTe150 alloy were prepared using spark plasma sintering technique, and its thermoelectric properties were evaluated over the temperature range 318–492 K. Through XRD analysis, we observed the same single phase as Sb2Te3 and weakened diffraction peaks. Rietveld refinement reveals that there is 0.96 at.% Ge that occupies in the Sb sites, leading to the lattice distortion in the Sb–Te crystal. High-resolution TEM images show that there are many nanodomains randomly distributed in the matrix with a large amount of amorphous phase adjoined. Measurements indicated that the Seebeck coefficients (α) increase and the electrical and thermal conductivities decrease with temperature in the entire temperature range. The maximum α value reaches 135 μV/K at 492 K, and the thermal conductivities are about 0.3 W/mK lower than those of present Sb2Te3 for the corresponding temperatures. The highest thermoelectric figure of merit ZT for the nanostructured alloy Sb100GeTe150 is 0.84 at 492 K, whereas that of the currently prepared Sb2Te3 is 0.74 at the corresponding temperature.
J.L. Cui,L.D. Mao,D.Y. Chen,X. Qian,X.L. Liu,W. Yang 한국물리학회 2009 Current Applied Physics Vol.9 No.3
Zn–Sb based alloys with Cu2Sb addition were prepared using spark plasma sintering technique and the effects of a Cu-contained intermetallic phase on the microstructures and thermoelectric properties were examined. Rietveld refinement reveals that there are many phases in the alloys, which involve β-Zn4Sb3, a major phase ZnSb, a small amount of an intermetallic compound Cu5Zn8 and unidentified impurity phases, the quantities of ZnSb and Cu5Zn8 increase from 67.3 wt.% to 91.8 wt.% and 0–4.3 wt.% with Cu2Sb additive increasing, respectively. The ZnSb plays a fundamental role in controlling the thermoelectric properties, and Cu5Zn8 is of great significance to optimize the transport properties. The maximum thermoelectric figure of merit ZT of 0.72 is obtained for the alloy (Cu2Sb)0.05–(Zn4Sb3)0.95 at 654 K, which is 0.25 higher than that of undoped β-Zn4Sb3 at the same conditions. Therefore, we conclude that a proper addition of Cu2Sb can contribute to the improvement of thermoelectric properties of Zn–Sb based alloys.
Radiative decay of theψ(2S)into two pseudoscalar mesons
Bai, J. Z.,Ban, Y.,Bian, J. G.,Blum, I.,Chen, A. D.,Chen, G. P.,Chen, H. F.,Chen, H. S.,Chen, J.,Chen, J. C.,Chen, X. D.,Chen, Y.,Chen, Y. B.,Cheng, B. S.,Choi, J. B.,Cui, X. Z.,Ding, H. L.,Dong, L. Y American Physical Society 2003 Physical review. D, Particles and fields Vol.67 No.3
Z.L. Du,H.L. Gao,J.L. Cui 한국물리학회 2015 Current Applied Physics Vol.15 No.7
The study of Mg2Si based thermoelectric materials has received widespread attention. In this research, quaternary Mg2(1+x)(Si0.2Ge0.1Sn0.7)0.99Sb0.01 (0.06 ≤ x ≤ 0.12) solid solutions with an optimized Sb doping were prepared by B2O3 flux method combined with spark plasma sintering (SPS) technique. The Seebeck coefficient, electrical conductivity and thermal conductivity were measured as a function of Mg excess between 300 K and 780 K. The electron concentration, electrical conductivity and lattice thermal conductivity increase while the Seebeck coefficient decreases with increasing magnesium excess content. The electron effective mass enhancement for x ≥ 0.08 suggests the conduction band convergence of Mg2Si0.2Ge0.1Sn0.7. Mg2.16(Si0.2Ge0.1Sn0.7)0.99Sb0.01 with a maximum dimensionless figure of merit of 0.94 at 780 K stand out as one of the best materials for intermediate temperature applications, providing a good nontoxic alternative to PbTe.
Li, J.L.,Li, N.,Lee, H.S.,Xing, S.S.,Qi, S.Z.,Tuo, Z.D.,Zhang, L.,Li, B.B.,Chen, J.G.,Cui, L. Elsevier 2016 Fitoterapia Vol.109 No.-
<P>Four new sesqui-lignans, (7R, 7'R, 7 '' S, 8S, 8'S, 8 '' S)-4',5 ''-dihydroxy-3,5,3',4 ''-tetramethoxy-7,9':7',9-diepoxy4,8 ''-oxy-8,8'-sesquineo-lignan-7',9 ''-diol (1), (7R, 7'R, 7 '' S, 8S, 8'S, 8 '' S)-4',3'-dihydroxy-3,5,3',5',4'pentamethoxy-7,9':7',9-diepoxy-4,8'-oxy-8,8'-sesquineo-lignan-7',9'-diol (2), (7R, 7'R, 7'S, 8S, 8'S, 8'S)-3',4'dihydroxy-3,5,4',5 ''-tetramethoxy-7,9':7',9-diepoxy-4,8'-oxy-8,8'-sesquineo-lignan-7',9'-diol (3) and acanthopanax A (7) together with three known compounds (4-6) were isolated from the EtOAc-soluble extract of Acanthopanax senticosus. Their structures were elucidated on the basis of spectroscopic and physicochemical analyses. All the isolates were evaluated for in vitro inhibitory activity against DGAT1 and DGAT2. Among them, compounds 1-6 were found to exhibit selective inhibitory activity on DGAT1 with IC50 values ranging from 61.1 1.3 to 97.7 1.1 111\4 and compound 7 showed selective inhibition of DGAT2 with IC50 value 93.2 1.2. (C) 2016 Elsevier B.V. All rights reserved.</P>