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Immune correlates of protection for dengue: State of the art and research agenda
Katzelnick, Leah C.,Harris, Eva,Baric, Ralph,Coller, Beth-Ann,Coloma, Josefina,Crowe Jr., James E.,Cummings Jr., Derek A.T.,Dean Jr., Hansi,de Silva Jr., Aravinda,Diamond Jr., Michael S.,Durbin Jr., A Elsevier 2017 Vaccine Vol.35 No.36
<P><B>Abstract</B></P> <P>Dengue viruses (DENV1-4) are mosquito-borne flaviviruses estimated to cause up to ∼400 million infections and ∼100 million dengue cases each year. Factors that contribute to protection from and risk of dengue and severe dengue disease have been studied extensively but are still not fully understood. Results from Phase 3 vaccine efficacy trials have recently become available for one vaccine candidate, now licensed for use in several countries, and more Phase 2 and 3 studies of additional vaccine candidates are ongoing, making these issues all the more urgent and timely. At the “<I>Summit on Dengue Immune Correlates of Protection</I>”, held in Annecy, France, on March 8–9, 2016, dengue experts from diverse fields came together to discuss the current understanding of the immune response to and protection from DENV infection and disease, identify key unanswered questions, discuss data on immune correlates and plans for comparison of results across assays/consortia, and propose a research agenda for investigation of dengue immune correlates, all in the context of both natural infection studies and vaccine trials.</P>
Cho, Yongbeom,Cho, Seongjae,Park, Byung-Gook,Harris, James S. Jr. The Institute of Electronics and Information Engin 2017 Journal of semiconductor technology and science Vol.17 No.5
Ge is on increasing demand in the advanced Si-compatible high-speed integrated circuits due to its high carrier mobilities. In particular, its hole mobility is much higher than those of other group-IV and III-V compound semiconductor materials. At the same time, Ge has the local minimum at the ${\Gamma}$ valley, which enables the utilization for optical applications. The fact that Ge becomes a direct-bandgap semiconductor material by applying tensile strain can be a good merit in obtaining higher spontaneous radiation probability. However, engineering the electronic structure of Ge by external mechanical stress through stressors with different thermal expansion coefficients might require a complicated set of processes. Efforts were made to turn it into a direct-bandgap one by incorporating Sn. Carrier mobilities are further enhanced when Sn is substitutionally incorporated into the Ge matrix. Thus, advantageous features are expected in improving both optical and electrical performances. Furthermore, the small bandgap energy and bandgap tunability make $Ge_{1-x}Sn_x$ alloy a promising material for components making up the optical interconnect on Si platform including optical source of near-infrared wavelength. In this work, we study the electrical and optical characteristics of $Ge_{1-x}Sn_x$ alloy as a function of Sn content. To achieve this goal, ab initio calculations of energy-band structures of $Ge_{1-x}Sn_x$ with different Sn fractions have been carried out based on linearized augmented plane wave (LAPW) method with modified Becke-Johnson potential model for more accurate bandgap energy. Then, a novel coding method has been adopted for more reliable overall band structures. The minimum Sn content required for direct- and indirect-bandgap material transition of $Ge_{1-x}Sn_x$, electrical and optical energy bandgaps to investigate the bandgap tunability, as well as effective masses, have been extracted as a function of Sn content. The transition point was found to be 6.9% and succinct reductions of effective masses of electron and hole have been confirmed.
Reynolds IV, Thomas H.,Pak, Yunbae,Harris, Thurl E.,Manchester, Jill,Barrett, Eugene J.,Lawrence Jr., John C. American Society for Biochemistry and Molecular Bi 2005 The Journal of biological chemistry Vol.280 No.7
<P>UDP-glucose (UDP-Glc) and glycogen levels in skeletal muscle fibers of defined fiber type were measured using microanalytical methods. Infusing rats with insulin increased glycogen in both Type I and Type II fibers. Insulin was without effect on UDP-Glc in Type I fibers but decreased UDP-Glc by 35-40% in Type IIA/D and Type IIB fibers. The reduction in UDP-Glc suggested that UDP-Glc pyrophosphorylase (PPL) activity might limit glycogen synthesis in response to insulin. To explore this possibility, we generated mice overexpressing a UDP-Glc PPL transgene in skeletal muscle. The transgene increased both UDP-Glc PPL activity and levels of UDP-Glc in skeletal muscles by approximately 3-fold. However, overexpression of UDP-Glc PPL was without effect on either the levels of skeletal muscle glycogen or glucose tolerance in vivo. The transgene was also without effect on either control or insulin-stimulated rates of (14)C-glucose incorporation into glycogen in muscles incubated in vitro. The results indicate that UDP-Glc PPL activity is not limiting for glycogen synthesis.</P>
조용범,조성재,박병국,James S. Harris, Jr. 대한전자공학회 2017 Journal of semiconductor technology and science Vol.17 No.5
Ge is on increasing demand in the advanced Si-compatible high-speed integrated circuits due to its high carrier mobilities. In particular, its hole mobility is much higher than those of other group-IV and III-V compound semiconductor materials. At the same time, Ge has the local minimum at the Γ valley, which enables the utilization for optical applications. The fact that Ge becomes a direct-bandgap semiconductor material by applying tensile strain can be a good merit in obtaining higher spontaneous radiation probability. However, engineering the electronic structure of Ge by external mechanical stress through stressors with different thermal expansion coefficients might require a complicated set of processes. Efforts were made to turn it into a direct-bandgap one by incorporating Sn. Carrier mobilities are further enhanced when Sn is substitutionally incorporated into the Ge matrix. Thus, advantageous features are expected in improving both optical and electrical performances. Furthermore, the small bandgap energy and bandgap tunability make Ge1-xSnx alloy a promising material for components making up the optical interconnect on Si platform including optical source of near-infrared wavelength. In this work, we study the electrical and optical characteristics of Ge1-xSnx alloy as a function of Sn content. To achieve this goal, ab initio calculations of energy-band structures of Ge1-xSnx with different Sn fractions have been carried out based on linearized augmented plane wave (LAPW) method with modified Becke-Johnson potential model for more accurate bandgap energy. Then, a novel coding method has been adopted for more reliable overall band structures. The minimum Sn content required for direct- and indirect-bandgap material transition of Ge1-xSnx, electrical and optical energy bandgaps to investigate the bandgap tunability, as well as effective masses, have been extracted as a function of Sn content. The transition point was found to be 6.9% and succinct reductions of effective masses of electron and hole have been confirmed.
Process Considerations for 80-GHz High-Performance p-i-n SiliconPhotodetectorforOpticalInterconnect
조성재,김형진,성민철,박병국,James S. Harris, Jr. 대한전자공학회 2012 Journal of semiconductor technology and science Vol.12 No.3
In this work, design considerations for highperformance silicon photodetector are thoroughly investi- gated. Besides the critical dimensions of device, guidelines for process architecture are suggested. Abiding by those criteria for improving both direct-current (DC) and alternating-current (AC) perfor- mances, a high-speed low-operation power silicon photodetector based on p-i-n structure for optical interconnect has been designed by device simulation. An f-3dB of 80 GHz at an operating voltage of 1 V was obtained.
Molecular Volume Effects on the Dynamics of Polymerized Ionic Liquids and their Monomers
Choi, U Hyeok,Mittal, Anuj,Price Jr., Terry L.,Lee Jr., Minjae,Gibson Jr., Harry W.,Runt Jr., James,Colby Jr., Ralph H. Elsevier 2015 ELECTROCHIMICA ACTA Vol.175 No.-
<P><B>Abstract</B></P> <P>The dependences of the glass transition temperature and the dielectric constant on molecular volume of the repeat unit for polymerized ionic liquids, the monomers they were polymerized from and simple ionic liquids, are reviewed and compared. The ionic conductivities of these materials and the frequencies at which ionic rearrangements occur are shown to be controlled by their glass transition temperatures. The ionic conductivity is proportional to the product of dielectric constant and ionic rearrangement frequency, with the proportionality constant determined by the molecular volume of the repeat unit.</P>
Thomas H. Reynolds Ⅳ,Pak, Yun-Bae,Thurl E. Harris,Jill Manchester,Eugene J. Barrett,John C. Lawrence, Jr. Plant molecular biology and biotechnology research 2005 Plant molecular biology and biotechnology research Vol.2005 No.
UDP-glucose (UDP-Gle) and glycogen levels in skeletal muscle fibers of defined fiber type were measured using microanalytical methods. Infusing rats with insulin increased glycogen in both Type I and Type II fibers Insulin was without effect in UDP-Gle in TypeⅠfibers but decreased UDP-Gle by 35-40% in Type IIA/D and Type IIB fibers. The reduction in UDP-Gle suggested that UDP-Gle pyrophosphorylase (PPL) activity might limit glycogen synthesis in response to insulin. To explore this possibility, we generated mice overexpressing a UDP-Glc PPL, transgene in skeletal muscle. The transgene increased both UDP-Glc PPL activity and levels of UDP-Glc in skeletal muscles by 3-fold. However, overexpression of UDP-Glc PPL was without effect on either the levels of skeletal muscle glycogen or glucose tolerance in vivo. The transgene was also without effect on either control or insulin-stimulated rates of C-glucose incorporation into glycogen in muscles incubated in vitro. The results indicate that UDP-Glc PPL activity is not limiting for glycogen synthesis
Lee, Jae-Sung,Cho, Seong-Jae,Park, Byung-Gook,Harris, James S. Jr.,Kang, In-Man The Institute of Electronics and Information Engin 2012 Journal of semiconductor technology and science Vol.12 No.2
In this paper, we present the radio-frequency (RF) modeling for gate-all-around (GAA) junctionless (JL) MOSFETs with 30-nm channel length. The presented non-quasi-static (NQS) model has included the gate-bias-dependent components of the source and drain (S/D) resistances. RF characteristics of GAA junctionless MOSFETs have been obtained by 3-dimensional (3D) device simulation up to 1 THz. The modeling results were verified under bias conditions of linear region (VGS = 1 V, VDS = 0.5 V) and saturation region (VGS = VDS = 1 V). Under these conditions, the root-mean-square (RMS) modeling error of $Y_{22}$-parameters was calculated to be below 2.4%, which was reduced from a previous NQS modeling error of 10.2%.
Seongjae Cho,Hyungjin Kim,Min-Chul Sun,Byung-Gook Park,James S. Harris Jr. 대한전자공학회 2012 Journal of semiconductor technology and science Vol.12 No.3
In this work, design considerations for highperformance silicon photodetector are thoroughly investi- gated. Besides the critical dimensions of device, guidelines for process architecture are suggested. Abiding by those criteria for improving both direct-current (DC) and alternating-current (AC) perfor- mances, a high-speed low-operation power silicon photodetector based on p-i-n structure for optical interconnect has been designed by device simulation. An f-3dB of 80 ㎓ at an operating voltage of 1 V was obtained.