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저온 제작 다결정 실리콘 박막 트랜지스터의 off-current메카니즘에 관한 연구
진교원,김진,이진민,김동진,조봉희,김영호,Chin, Gyo-Won,Kim, Jin,Lee, Jin-Min,Kim, Dong-Jin,Cho, Bong-Hee,Kim, Young-Ho 한국전기전자재료학회 1996 電氣電子材料學會誌 Vol.9 No.10
The conduction mechanisms of the off-current in low temperature (.leq. >$600^{\circ}C$) processed polycrystalline silicon thin film transistors (LTP poly-Si TFT'S) have been systematically studied. Especially, the temperature and bias dependence of the off-current between hydrogenated and nonhydrogenated poly-Si TFT's were investigated and compared. The off-current of nonhydrogenated poly-Si TF's is because of a resistive current at low gate and drain voltage, thermally activated current at high gate and low drain voltage, and Poole-Frenkel emission current in the depletion region near the drain at high gate and drain voltage. After hydrogenation it has shown that the off -current mechanism is caused mainly by thermal activation and that the field-induced current component is suppressed.