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Polarization-dependent Photore Quantum Well Structure
G. J. Jan,C. M. Lai,J. H. Huang 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
We have measured the polarization-dependent photore ectance spectra of InGaP/GaAs quantum well structure. These quantum well specimens were grown by gas source molecular beam epitaxy at the growth temperature 440 C, 480 C and 520 C for C1007, C1008 and C1009, respectively. Each of these samples consists of a 7 nm GaAs well, 0.2 m (top) and 1 m (bottom) InGaP barrier. The properties of InGaP layer were obtained by characterized the InGaP/GaAs epilayer sample using double X-ray diraction and low temperature photoluminescence experiments. The results show that the strains of InGaP for all samples are less than 0.2 % and the ordered parameters are about 0.3. The PR spectra demonstrate the anisotropic optical properties. Besides, the energy dierences between the ground states are almost equal to the dierences between bandgap of the InGaP barrier. And the ground state energy is 4 meV less than GaAs bandgap for sample C1009. These results suggest that the transitions of QW structure strongly involve with the partial ordered InGaP barrier by type II band alignment.??
Lai, C.H.,Qiao, S.Y.,Li, Defa,Piao, X.S.,Bai, L.,Mao, X.F. Asian Australasian Association of Animal Productio 2004 Animal Bioscience Vol.17 No.2
The objective of this study was to evaluate Solpro500 (a wheat hydrolysate containing a high level of glutamine) as a replacement for spray dried porcine plasma (SDPP) in diets fed to nursery pigs. One hundred and eight pigs (Dalland, $5.39{\pm}0.80$ kg BW) weaned at 21 days were assigned to one of three treatment groups for a 28 day feeding trial. The experimental diets were based on corn and soybean meal and were supplemented with either 8% SDPP, 4% SDPP plus 4% Solpro500 or 8% Solpro500. Each treatment was fed to six pens with six pigs per pen (4 barrows and 2 gilts). The experimental results indicated no significant difference (p>0.05) in daily gain, feed intake or feed efficiency for pigs fed the three experimental diets. However, the diarrhea index for pigs fed either 4% SDPP and 4% Solpro500 or 8% Solpro500 was lower (p<0.05) than that for pigs fed 8% SDPP. No differences (p>0.05) were found in the apparent fecal digestibility of dry matter, organic matter or crude protein between pigs fed the three diets. The intestinal morphology (villous height, villous width and crypt depth) was not affected by diet treatments (p>0.05). In conclusion, Solpro500 SDPP can replace SDPP without any negative effects on nursery pig performance.
Synchronized Bursting Induced by Network Connectivity in Cortical Neuronal Cultures
L.C. Jia,P.-Y. Lai,C. K. Chan,C.H. Chang,C.R. Han,M.T. Tsai,Y.S. Chou 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.1I
Synchronization of cortical neural cultures is studied as a function of the effective network connectivity in the phenomenon of synchronized firing (SF). The synchronized bursting frequency (during SF) of the network is found to be much slower than the characteristic time scale of a neuron and increases with the network connectivity. Using fluorescence imaging techniques, we found that SF occurs only when the incubation time is longer than some critical age tc and the synchronized bursting frequency f increases with time as f = fc + fo log( t tc ). Furthermore, tc is found to scale with the cell plating density as tc 1 p . Based on the result of photolysis of neurons, the synchronized bursting frequency is shown to be related to the network connectivity, hence, the growth behavior can be inferred from the measured SF frequencies. We further build a network growth model with the characteristics of an early stage active growth followed by a late-stage retarded growth, which can account for the experimental data quantitatively. Electrophysiological measurements using double-patch techniques reveal that even though the bursting frequencies are synchronized, the intra-burst spikes are not. We also present a mean-field model of the neural network that enables the neuron firing to be inhibited and generates inter-spike intervals with long time scales resulting in bursting.
ELECTRON TRAPPING AND DETRAPPING BEHAVIORS OF THIN THERMALLY NITRIDED OXIDES
ChEng, Y. C.,Wong, H.,Lo, H. B.,Lai, P. T.,Liu, Z. H. 대한전자공학회 1989 ICVC : International Conference on VLSI and CAD Vol.1 No.1
This work reports the electron trapping and de trapping behaviors of thin ($lt;300Å) thermally grown oxide annealed in pure ammonia at high temperature ($gt;1000℃). The phenomena are investigated by using the low-frequency noise measurement on MOSFETs, monitoring the flatband-voltage shift of MOS capacitor subjected to electron injection and shift of Fowler-Nordheim (FN) curve in high field region. Results indicate that the nitrided samples have particularly higher interface trap density at 0.43eV (below the conduction band of silicon) and a larger capture cross section than the conventional oxides, and the estimated centroid of the trap distribution is very close to the silicon-oxide interface. In addition, the trapped charge density is found to have a strong dependence on the nitridation conditions, and is lower for higher oxide field due to an increase of detrapping rate. On the other hand, electron conduction in the nitrided oxide films is mainly governed by the FN mechanism in low field ($lt;7 MV/cm) region and by the Pool-Frankel mechanism in highfield region where the traps assist the conduction.