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Effect of growth interruption on InN/GaN single quantum well structures
Kwon, S.Y.,Kim, H.J.,Na, H.,Seo, H.C.,Kim, H.J.,Shin, Y.,Kim, Y.W.,Yoon, S.,Oh, H.J.,Sone, C.,Park, Y.,Sun, Y.P.,Cho, Y.H,Cheong, H.M.,Yoon, E. The Korean Vacuum Society 2003 Applied Science and Convergence Technology Vol.12 No.1
We successfully grew InN/GaN single quantum well structures by metal-organic chemical vapor deposition and confirmed their formation by optical and structural measurements. We speculate that relatively high growth temperature ($730^{\circ}C$) of InN layer enhanced the formation of 2-dimensional quantum well structures, presumably due to high adatom mobility. As the growth interruption time increased, the PL emission efficiency from InN layer improved with peak position blue-shifted and the dislocation density decreased by one order of magnitude. The high resolution cross-sectional TEM images clearly showed that the InN layer thickness reduced from 2.5 nm (without GI) to about I urn (with 10 sec GI) and the InN/GaN interface became very flat with 10 sec GI. We suggest that decomposition and mass transport processes on InN during GI is responsible for these phenomena.
손창수,김영진,박용직,김선중,Sone, C.S.,Kim, Y.J.,Bahg, Y.J.,Kim, S.J. 한국전자통신연구원 1993 전자통신동향분석 Vol.8 No.3
1992년부터 서비스를 시작한 범유럽 디지틀 이동통신 시스팀인 GSM은 범세계적인 규격으로 발전해가고 있다. 이에 따라 본 고에서는 GSM의 향후 발전 방향을 가늠해보고자 그동안 추진되었던 GSM의 표준화 정림, 추진 체계 등을 알아보고, 현재 드러나고 있는 여러가지 현안 사항들을 조사한 후, 이로부터 발전된 것과 계획을 차례로 살펴보기로 한다.
Effect of growth interruption on InN / GaN single quantum well structures
S.-Y. Kwon,H. J. Kim,H. Na,H.-C. Seo,H. J. Kim,Y. Shin,Y.-W. Kim,S. Yoon,H.-J. Oh,C. Sone,Y. Park,Y. P. Sun,Y.-H. Cho,H. M. Cheong,E. Yoon 한국진공학회(ASCT) 2003 Applied Science and Convergence Technology Vol.12 No.S1
We successfully grew InN/GaN single quantum well structures by metal-organic chemical vapor deposition and confirmed their formation by optical and structural measurements. We speculate that relatively high growth temperature (730℃) of InN layer enhanced the formation of 2-dimensional quantum well structures, presumably due to high adatom mobility. As the growth interruption time increased, the PL emission efficiency from InN layer improved with peak position blue-shifted and the dislocation density decreased by one order of magnitude. The high resolution cross-sectional TEM images clearly showed that the InN layer thickness reduced from 2.5 ㎚ (without GI) to about 1 ㎚ (with 10 sec GI) and the InN/GaN interface became very flat with 10 sec GI. We suggest that decomposition and mass transport processes on InN during GI is responsible for these phenomena.
In/ITO Ohmic Contacts to Ga-face and N-face n-GaN for InGaN-based Light-emitting Diodes
Ki Man Kang,J. M. Jo,김현수,Y. S. Kim,C. Sone,Y. Park,곽준섭 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.1
We have investigated the In/indium tin oxide (ITO) scheme for obtaining high-quality Ohmic contacts to Ga-face and N-face nGaN for InGaN-based light-emitting diodes (LEDs). The In/ITO contacts to Ga-face n-GaN become Ohmic with specific contact resistances of 1.8 × 10−3Ωcm2 when annealed at 30℃ for 1 min in a N2 ambient The resistance of the In/ITO contacts to N-face n-GaN is shown to be much lower than that of the contacts to Ga-face n-GaN. This result indicates that the In/ITO scheme can serve as a highly-promising n-type Ohmic contact for vertical LEDs.