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서임춘,김동일,예병한,정발,박종욱,Suh, Im-Choon,Kim, Dong-Il,Yeh, Byung-Hahn,Jung, Bahl,Park, Chong-Ook 한국세라믹학회 1994 한국세라믹학회지 Vol.31 No.8
To increase the anti-oxidation and anti-wear properties of graphite for the propellant-burning environment, SiC, Pt and Al2O3 multi-layer coatings were conducted succesisvely and the optimum condition was researched. The SiC layer was produced by pack cementation and SiC layer in thickness of 30 ${\mu}{\textrm}{m}$ coating was produced after coating for 6 hours. Pt layer was coated by sputtering, and the Al2O3 layer was coated by reactive sputtering. the thickness of Pt layer and Al2O3 layer was less than one-tenth of that of SiC layer. The pack coated specimens and multi-layer coated specimens were made using above conditions and test-fired. The test result showed that the wear rate of SiC layer is approximately 1/10 compared to that of uncoated graphite.
저압화학기상증착법에 의한 $Si_3N_4$ 내산화.내마모 코팅
이승윤,김옥희,예병한,정발,박종옥,Lee, Seung-Yun,Kim, Ok-Hee,Yeh, Byung-Hahn,Jung, Bahl,Park, Chong-Ook 한국재료학회 1995 한국재료학회지 Vol.5 No.7
Si$_3$N$_4$가 추진기관 연소조건 하에서 흑연의 산화와 마모를 효과적으로 방지하는 다층 코팅재료로 쓰일 수 있도록 하기 위하여 저압화학기상증착법(LPCVD)으로 Si$_3$N$_4$를 코팅할 때의 증착특성에 대해 연구하였다. 흑연 위에 pack cementation방법으로 SiC를 코팅하고 그 위에 저압화학기상증착법으로 Si$_3$N$_4$를 코팅 하였으며, 증착온도와 반응기체입력비를 변화시키면서 이에 따른 증착속도와 표면형상의 변화를 관찰하였다. 증착속도는 증착온도가 높아짐에 따라 처음에는 증가하다가 최대값을 나타낸 후 감소하는 경향을 나타냈으며, 그레인의 크기는 증착온도가 높아짐에 따라 작아지는 경향을 보였다. 한편, 반응기체의 입력비가 20$\leq$NH$_3$/SiH$_4$$\leq$40인 조건에서는 증착속도의 변화나 표면형상의 변화를 관찰할 수 없었다. 증착온도 800~130$0^{\circ}C$ 범위에서 증착된 Si$_3$N$_4$가 비정질상인 것을 XRD로 확인할 수 있었으며 130$0^{\circ}C$, 질소 분위기에서 2시간 동안 열처리하여 결정상인 Si$_3$N$_4$를 인을 수 있었다. The deposition properties of Si$_3$N$_4$ deposited by low pressure chemical vapor deposition were studied to evaluate Si$_3$N$_4$as part of multi-layer coatings for anti-oxidation and anti-wear coating of graphite in the propellant-burning environment. Si$_3$N$_4$was deposited on the pack-SiC coated graphite and the tendencies of deposition rate and surface morphology changes with temperatures and reaction gas ratios were investigated. In low deposition temperatures the deposition rate increased tilth increasing temperature but in high temperatures the deposition rate decreased with increasing temperature. The grain size of Si$_3$N$_4$decreased with increasing temperature. In condition that the range of reaction gas ratios is 20$\leq$NH$_3$/SiH$_4$$\leq$40, the deposition rate and surface morphology did not change. The Si$_3$N$_4$deposited at 800~130$0^{\circ}C$ was amorphous, and by post-annealing at 130$0^{\circ}C$ in a $N_2$ambient, the Si$_3$N$_4$crystalized.