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Baeg, Kang‐,Jun,Khim, Dongyoon,Jung, Soon‐,Won,Kang, Minji,You, In‐,Kyu,Kim, Dong‐,Yu,Facchetti, Antonio,Noh, Yong‐,Young WILEY‐VCH Verlag 2012 Advanced Materials Vol.24 No.40
<P>On page 5433, Yong‐Young Noh, Antonio Facchetti, Kang‐Jun Baeg, and co‐workers report that high performance ambipolar complementary inverters and ring oscillators are provided by a remarkable enhancement of both hole injection and transport for n‐channel dominant N2200 OFETs. The significant enhancement of hole mobility in N2200 OTFTs is attributed to the strong dipoles in fluorinated high‐k gate dielectric blend of P(VDF‐TrFE):PMMA. </P>
Baeg, Kang‐,Jun,Khim, Dongyoon,Jung, Soon‐,Won,Kang, Minji,You, In‐,Kyu,Kim, Dong‐,Yu,Facchetti, Antonio,Noh, Yong‐,Young WILEY‐VCH Verlag 2012 ADVANCED MATERIALS Vol.24 No.40
<P><B>A remarkable enhancement of p‐channel properties</B> is achieved in initially n‐channel dominant ambipolar P(NDI2OD‐T2) organic field‐effect transistors (OFETs) by the use of the fluorinated high‐k dielectric P(VDF‐TrFE). An almost two orders of magnitude increase in hole mobility (∼0.11 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP>) originates from a strong interface modification at the semiconductor/dielectric interface, which provides high‐performance complementary‐like inverters and ring oscillator circuits.</P>
Baeg, Kang-Jun,Kim, Juhwan,Khim, Dongyoon,Caironi, Mario,Kim, Dong-Yu,You, In-Kyu,Quinn, Jordan R.,Facchetti, Antonio,Noh, Yong-Young American Chemical Society 2011 ACS APPLIED MATERIALS & INTERFACES Vol.3 No.8
<P>Ambipolar π-conjugated polymers may provide inexpensive large-area manufacturing of complementary integrated circuits (CICs) without requiring micro-patterning of the individual p- and n-channel semiconductors. However, current-generation ambipolar semiconductor-based CICs suffer from higher static power consumption, low operation frequencies, and degraded noise margins compared to complementary logics based on unipolar p- and n-channel organic field-effect transistors (OFETs). Here, we demonstrate a simple methodology to control charge injection and transport in ambipolar OFETs via engineering of the electrical contacts. Solution-processed caesium (Cs) salts, as electron-injection and hole-blocking layers at the interface between semiconductors and charge injection electrodes, significantly decrease the gold (Au) work function (∼4.1 eV) compared to that of a pristine Au electrode (∼4.7 eV). By controlling the electrode surface chemistry, excellent p-channel (hole mobility ∼0.1–0.6 cm<SUP>2</SUP>/(Vs)) and n-channel (electron mobility ∼0.1–0.3 cm<SUP>2</SUP>/(Vs)) OFET characteristics with the same semiconductor are demonstrated. Most importantly, in these OFETs the counterpart charge carrier currents are highly suppressed for depletion mode operation (<I>I</I><SUB>off</SUB> < 70 nA when <I>I</I><SUB>on</SUB> > 0.1–0.2 mA). Thus, high-performance, truly complementary inverters (high gain >50 and high noise margin >75% of ideal value) and ring oscillators (oscillation frequency ∼12 kHz) based on a solution-processed ambipolar polymer are demonstrated.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2011/aamick.2011.3.issue-8/am200705j/production/images/medium/am-2011-00705j_0009.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/am200705j'>ACS Electronic Supporting Info</A></P>
Baeg, Kang-Jun,Khim, Dongyoon,Kim, Juhwan,Han, Hyun,Jung, Soon-Won,Kim, Tae-Wook,Kang, Minji,Facchetti, Antonio,Hong, Sung-Kyu,Kim, Dong-Yu,Noh, Yong-Young American Chemical Society 2012 ACS APPLIED MATERIALS & INTERFACES Vol.4 No.11
<P>We report here the development of high-performance p- and n-channel organic field-effect transistors (OFETs) and complementary circuits using inkjet-printed semiconducting layers and high-<I>k</I> polymer dielectric blends of poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) and poly(methyl methacrylate) (PMMA). Inkjet-printed p-type polymer semiconductors containing alkyl-substituted thienylenevinylene (TV) and dodecylthiophene (PC12TV12T) and n-type poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-dithiophene)} (P(NDI2OD-T2)) OFETs typically show high field-effect mobilities (μ<SUB>FET</SUB>) of 0.2–0.5 cm<SUP>2</SUP>/(V s), and their operation voltage is effectively reduced to below 5 V by the use of P(VDF-TrFE):PMMA blends. The main interesting result is that the OFET characteristics could be tuned by controlling the mixing ratio of P(VDF-TrFE) to PMMA in the blended dielectric. The μ<SUB>FET</SUB> of the PC12TV12T OFETs gradually improves, whereas the P(NDI2OD-T2) OFET properties become slightly worse as the P(VDF-TrFE) content increases. When the mixing ratio is optimized, well-balanced hole and electron mobilities of more than 0.2 cm<SUP>2</SUP>/(V s) and threshold voltages below ±3 V are obtained at a 7:3 ratio of P(VDF-TrFE) to PMMA. Low-voltage-operated (∼2 V) printed complementary inverters are successfully demonstrated using the blended dielectric and exhibit an ideal inverting voltage of nearly half of the supplied bias, high voltage gains of greater than 25, and excellent noise margins of more than 75% of the ideal values.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2012/aamick.2012.4.issue-11/am301793m/production/images/medium/am-2012-01793m_0010.gif'></P>
Baeg, Kang-Jun,Noh, Yong-Young,Sirringhaus, Henning,Kim, Dong-Yu WILEY-VCH Verlag 2010 Advanced Functional Materials Vol.20 No.2
<P>Organic field-effect transistor (FET) memory is an emerging technology with the potential to realize light-weight, low-cost, flexible charge storage media. Here, solution-processed poly[9,9-dioctylfluorenyl-2,7-diyl]-co-(bithiophene)] (F8T2) nano floating gate memory (NFGM) with a top-gate/bottom-contact device configuration is reported. A reversible shift in the threshold voltage (V<SUB>Th</SUB>) and reliable memory characteristics was achieved by the incorporation of thin Au nanoparticles (NPs) as charge storage sites for negative charges (electrons) at the interface between polystyrene and cross-linked poly(4-vinylphenol). The F8T2 NFGM showed relatively high field-effect mobility (µ<SUB>FET</SUB>) (0.02 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP>) for an amorphous semiconducting polymer with a large memory window (ca. 30 V), a high on/off ratio (more than 10<SUP>4</SUP>) during writing and erasing with an operation voltage of 80 V of gate bias in a relatively short timescale (less than 1 s), and a retention time of a few hours. This top-gated polymer NFGM could be used as an organic transistor memory element for organic flash memory.</P> <B>Graphic Abstract</B> <P>Solution-processed top-gate field-effect transistor (FET) memory with incorporated Au nanoparticles (NPs) in double-layered polymer gate dielectrics is fabricated using PS, cross-linked PVP, and poly[9,9-dioctylfluorenyl-2,7-diyl]-co-(bithiophene)] (F8T2). The threshold voltage is reversibly and systemically controlled by application of appropriate gate biases, which mainly originates from negative charge trapping in the Au NPs. This could be utilized as a key element in organic flash memory. <img src='wiley_img/1616301X-2010-20-2-ADFM200901677-content.gif' alt='wiley_img/1616301X-2010-20-2-ADFM200901677-content'> </P>
Baeg, Kang-Jun,Bae, Gwang-Tae,Noh, Yong-Young American Chemical Society 2013 ACS APPLIED MATERIALS & INTERFACES Vol.5 No.12
<P>Here we report high-performance polymer OFETs with a low-cost Mo source/drain electrode by efficient charge injection through the formation of a thermally deposited V<SUB>2</SUB>O<SUB>5</SUB> thin film interlayer. A thermally deposited V<SUB>2</SUB>O<SUB>5</SUB> interlayer is formed between a regioregular poly(3-hexylthiophene) (rr-P3HT) or a p-type polymer semiconductor containing dodecyl-substituted thienylenevinylene (TV) and dodecylthiophene (PC12TV12T) and the Mo source/drain electrode. The P3HT or PC12TV12T OFETs with the bare Mo electrode exhibited lower charge carrier mobility than those with Au owing to a large barrier height for hole injection (0.5–1.0 eV). By forming the V<SUB>2</SUB>O<SUB>5</SUB> layer, the P3HT or PC12TV12T OFETs with V<SUB>2</SUB>O<SUB>5</SUB> on the Mo electrode exhibited charge carrier mobility comparable to that of a pristine Au electrode. Best P3HT or PC12TV12T OFETs with 5 nm thick V<SUB>2</SUB>O<SUB>5</SUB> on Mo electrode show the charge carrier mobility of 0.12 and 0.38 cm<SUP>2</SUP>/(V s), respectively. Ultraviolet photoelectron spectroscopy results exhibited the work-function of the Mo electrode progressively changed from 4.3 to 4.9 eV with an increase in V<SUB>2</SUB>O<SUB>5</SUB> thickness from 0 to 5 nm, respectively. Interestingly, the V<SUB>2</SUB>O<SUB>5</SUB>-deposited Mo exhibits comparable <I>R</I><SUB>c</SUB> to Au, which mainly results from the decreased barrier height for hole carrier injection from the low-cost metal electrode to the frontier molecular orbital of the p-type polymer semiconductor after the incorporation of the transition metal oxide hole injection layer, such as V<SUB>2</SUB>O<SUB>5</SUB>. This enables the development of large-area, low-cost electronics with the Mo electrodes and V<SUB>2</SUB>O<SUB>5</SUB> interlayer.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2013/aamick.2013.5.issue-12/am401375c/production/images/medium/am-2013-01375c_0006.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/am401375c'>ACS Electronic Supporting Info</A></P>
Polarity Effects of Polymer Gate Electrets on Non-Volatile Organic Field-Effect Transistor Memory
Baeg, Kang-Jun,Noh, Yong-Young,Ghim, Jieun,Lim, Bogyu,Kim, Dong-Yu WILEY-VCH Verlag 2008 Advanced Functional Materials Vol.18 No.22
<P>Organic non-volatile memory (ONVM) based on pentacene field-effect transistors (FETs) has been fabricated using various chargeable thin polymer gate dielectrics—termed electrets—onto silicon oxide insulating layers. The overall transfer curve of organic FETs is significantly shifted in both positive and negative directions and the shifts in threshold voltage (V<SUB>Th</SUB>) can be systemically and reversibly controlled via relatively brief application of the appropriate external gate bias. The shifted transfer curve is stable for a relatively long time—more than 10<SUP>5</SUP> s. However, this significant reversible shift in V<SUB>Th</SUB> is evident only in OFETs with non-polar and hydrophobic polymer electret layers. Moreover, the magnitude of the memory window in this device is inversely proportional to the hydrophilicity (determined from the water contact angle) and dielectric polarity (determined from the dielectric constant), respectively. Memory behaviors of ONVM originate from charge storage in polymer gate electret layers. Therefore, the small shifts in V<SUB>Th</SUB> in ONVM with hydrophilic and polar polymers may be due to very rapid dissipation of transferred charges through the conductive channels which form from dipoles, residual moisture, or ions in the polymer electret layers. It is verified that the surface or bulk conductivities of polymer gate electret layers played a critical role in determining the non-volatile memory properties.</P> <B>Graphic Abstract</B> <P>Organic non-volatile memory based on pentacene field-effect transistors (FETs) has been fabricated using various chargeable thin polymer gate dielectrics. A significant reversible shift in V<SUB>Th</SUB> is evident only in OFETs with non-polar and hydrophobic polymer electret-layers. The magnitude of the memory window in this device is inversely proportional to the hydrophilicity and dielectric polarity. <img src='wiley_img/1616301X-2008-18-22-ADFM200800378-content.gif' alt='wiley_img/1616301X-2008-18-22-ADFM200800378-content'> </P>