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RISS 인기검색어
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- 저자 : Agrawal Khushabu (검색결과 4 건)
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Agrawal Khushabu,Patil Vilas,Ali Fida,Rabelo Matheus,우원종,조은철,Yi Junsin 한국물리학회 2021 Current Applied Physics Vol.26 No.-
The HF treatment removes the native oxide and lays behind the dangling bonds over the Si surface which causes the increment in density of interface traps (Dit) through the direct deposition of high-k dielectric on Si. Here, we propose the facile method for reduction of interface traps and improvement in barrier height with the (NH4)2S treatment on Al2O3/Si interfaces, which can be used as the base for the non-volatile memory device. The AFM was used to optimize the treatment time and surface properties, while XPS measurements were carried out to study the interface and extract the barrier height (ΦB). The short period of 20 s treatment shows the improvement in the barrier height (1.02 eV), while the one order reduction in the Dit (0.84 × 1012 cm2/eV) of sulfur passivated Al/Al2O3/Si MOS device. The results indicate the favorable passivation of the dangling bonds over the Si surfaces covered by sulfur atoms.
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Self Heating Effects in Sub-nm Scale FinFETs
Agrawal, Khushabu,Patil, Vilas,Yoon, Geonju,Park, Jinsu,Kim, Jaemin,Pae, Sangwoo,Kim, Jinseok,Cho, Eun-Chel,Junsin, Yi The Korean Institute of Electrical and Electronic 2020 전기전자재료학회논문지 Vol.33 No.2
Thermal effects in bulk and SOI FinFETs are briefly reviewed herein. Different techniques to measure these thermal effects are studied in detail. Self-heating effects show a strong dependency on geometrical parameters of the device, thereby affecting the reliability and performance of FinFETs. Mobility degradation leads to 7% higher current in bulk FinFETs than in SOI FinFETs. The lower thermal conductivity of SiO<sub>2</sub> and higher current densities due to a reduction in device dimensions are the potential reasons behind this degradation. A comparison of both bulk and SOI FinFETs shows that the thermal effects are more dominant in bulk FinFETs as they dissipate more heat because of their lower lattice temperature. However, these thermal effects can be minimized by integrating 2D materials along with high thermal conductive dielectrics into the FinFET device structure.
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Self Heating Effects in Sub-nm Scale FinFETs
Khushabu Agrawal,Vilas Patil,윤건주,박지수,김재민,배상우,김진석,조은철,이준신 한국전기전자재료학회 2020 전기전자재료학회논문지 Vol.33 No.2
Thermal effects in bulk and SOI FinFETs are briefly reviewed herein. Different techniques to measure these thermal effects are studied in detail. Self-heating effects show a strong dependency on geometrical parameters of the device, thereby affecting the reliability and performance of FinFETs. Mobility degradation leads to 7% higher current in bulk FinFETs than in SOI FinFETs. The lower thermal conductivity of SiO2 and higher current densities due to a reduction in device dimensions are the potential reasons behind this degradation. A comparison of both bulk and SOI FinFETs shows that the thermal effects are more dominant in bulk FinFETs as they dissipate more heat because of theirlower lattice temperature. However, these thermal effects can be minimized by integrating 2D materials along with high thermal conductive dielectrics into the FinFET device structure.
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Effect of Nitrogen, Titanium, and Yttrium Doping on High-K Materials as Charge Storage Layer
Cui, Ziyang,Xin, Dongxu,Park, Jinsu,Kim, Jaemin,Agrawal, Khushabu,Cho, Eun-Chel,Yi, Junsin The Korean Institute of Electrical and Electronic 2020 전기전자재료학회논문지 Vol.33 No.6
Non-volatile memory is approaching its fundamental limits with the Si<sub>3</sub>N<sub>4</sub> storage layer, necessitating the use of alternative materials to achieve a higher programming/erasing speed, larger storage window, and better data retention at lower operating voltage. This limitation has restricted the development of the charge-trap memory, but can be addressed by using high-k dielectrics. The paper reviews the doping of nitrogen, titanium, and yttrium on high-k dielectrics as a storage layer by comparing MONOS devices with different storage layers. The results show that nitrogen doping increases the storage window of the Gd<sub>2</sub>O<sub>3</sub> storage layer and improves its charge retention. Titanium doping can increase the charge capture rate of HfO<sub>2</sub> storage layer. Yttrium doping increases the storage window of the BaTiO<sub>3</sub> storage layer and improves its fatigue characteristics. Parameters such as the dielectric constant, leakage current, and speed of the memory device can be controlled by maintaining a suitable amount of external impurities in the device.
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