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An ERD-TOF System for the Depth Profiling of Light Elements
김영석,우형주,김준곤,김덕경,최한우,홍완,Kim, Y. S.,Woo, H. J.,Kim, J. K.,Kim, D. K.,Choi, H. W.,Hong, W. The Korean Vacuum Society 1996 Applied Science and Convergence Technology Vol.5 No.1
An ERD-TOF system is constructed for the nondestructive depth profiling of light elements in thin films in the range of several thousand angstroms. The particles, recoiled by 10 $MeV^{35}Cl$ projectiles, were detected by a Time-Of-Flight spectrometer composed of a MCP (Micro Channel Plate) and a SSB (Silicon Surface Barrier) detector. A two parameter data acquisition system composed of two PC's was constructed for registering simultaneous time and energy signals. A $Si_3N_4$/poly-Si/$SiO_2$/Si sample was anlayzed and the result is compared with RBS. The detection limit, maximum probable depth and depth resolution for light elements in silicon are about $4\times10^{14}atoms/\textrm{cm}^2$, 5, 000$\AA$ and 100$\AA$, respectively.
김준곤,우형주,최한우,김기동,홍완,Kim Joonkon,Woo H. J.,Choi H. W.,Kim G. D.,Hong W. The Korean Vacuum Society 2005 Applied Science and Convergence Technology Vol.14 No.2
지난 10년 동안 유전체 내부에 형성된 나노미터 크기의 규소알갱이는 발광센터로서 주목 받아왔다 나노미터 크기인 결정질 규소의 엑시토닉 전자-홀의 쌍들이 발광결합에 기여한다고 여겨진다. 그러나 규소결정에 존재하는 여러가지 결함들은 비발광 천이의 경로가 되어 나노규소결접립의 발광천이와 경쟁하여 발광효율을 저하시키는 요인이 된다. 이러한 결정 결함들은 고온 열처리과정에서 대부분 소멸되나 $1000^{\circ}C$ 이상의 공정 에서도 나노규소와 유전체의 계면에 존재하는 결함들은 나노규소결정립의 발광을 억제하게 된다. 일반적으로 수소로서 규소결정립의 계면을 마감처리하게 되면 규소결정립의 발광효율이 획기적으로 향상되나 불행하게도 매질 내 수소의 높은 이동성으로 말미암아 후속 열처 리 과정에서 수소마감효과는 쉽게 손실된다. 따라서 본 연구에서는 온도가역적인 수소 대신 인을 이온주입 방법으로 첨가하여 수소와 같은 계면 마감효과를 얻으며 또한 후속 고온공정 에 대한 내구력을 증대시켰다. 모재인 산화규소 기판에 400keV, $1\times10^{17}\; Si/cm^2$와 그 주위에 균일한 함량을 도핑하기 위하여 다중에너지의 인을 주입하였다. 규소와 인을 이온주입 후 Ar 분위기에서 $1100^{\circ}C$ , 두 시간의 후열처리를 통하여 규소결정립을 형성하였으며 향상된 내열효과를 시험하기 위하여 Ar 분위기에서 $1000^{\circ}C$까지 열처리하였다. 인으로 마감된 나노미터 크기인 규소 결정립의 향상된 광-발광(PL)효과와 감쇄시간, 그리고 발광파장의 변화에 대하여 논의하였다. Nanometric crystalline silicon (no-Si) embedded in dielectric medium has been paid attention as an efficient light emitting center for more than a decade. In nc-Si, excitonic electron-hole pairs are considered to attribute to radiative recombination. However the surface defects surrounding no-Si is one of non-radiative decay paths competing with the radiative band edge transition, ultimately which makes the emission efficiency of no-Si very poor. In order to passivate those defects - dangling bonds in the $Si:SiO_2$ interface, hydrogen is usually utilized. The luminescence yield from no-Si is dramatically enhanced by defect termination. However due to relatively high mobility of hydrogen in a matrix, hydrogen-terminated no-Si may no longer sustain the enhancement effect on subsequent thermal processes. Therefore instead of easily reversible hydrogen, phosphorus was introduced by ion implantation, expecting to have the same enhancement effect and to be more resistive against succeeding thermal treatments. Samples were Prepared by 400 keV Si implantation with doses of $1\times10^{17}\;Si/cm^2$ and by multi-energy Phosphorus implantation to make relatively uniform phosphorus concentration in the region where implanted Si ions are distributed. Crystalline silicon was precipitated by annealing at $1,100^{\circ}C$ for 2 hours in Ar environment and subsequent annealing were performed for an hour in Ar at a few temperature stages up to $1,000^{\circ}C$ to show improved thermal resistance. Experimental data such as enhancement effect of PL yield, decay time, peak shift for the phosphorus implanted nc-Si are shown, and the possible mechanisms are discussed as well.
김영석,김준곤,홍완,김덕경,조수영,우형주,김낙배,Kim, Y. S.,Kim, J. M.,Hong, W.,Kim, D. K.,Cho, S. Y.,Woo, H. J.,Kim, N. B. 한국진공학회 1993 Applied Science and Convergence Technology Vol.2 No.4
Hydrogen depth profiling was performed by H(19F, $\alpha$${\gamma}$) nuclear resonance reactin . A cesium sputtering ion sorce and 1.7MV Tandem Van de Graaff accelerator was used for the production of 6.5MeV 19F ion. The ${\gamma}$ rays produced by the reaction were measure dby 3" $\times$3" and 6" $\times$8" Nal detectors . A test measurement was done for hydrogen contaminatin layer of a bare silicon wafer, Si3N4(H) and Zr(O)a-Si/Si for the purpose of verifying the applicability , detection limit and the reliability of the method.ility of the method.
폴리트리메틸렌텔레프탈레이트 / 폴리비스페놀카보네이트 용융 블렌드 (1)
나상권,김정규,홍완해 한국공업화학회 2000 응용화학 Vol.4 No.2
Melt blends of poly(trimethylene terephthalate), PTT and Poly(Bisphenol A carbonate), PC with various compositions were prepared at 275℃ using 40rpm for 60min. Thermal properties of PTT/PC blends have been studied by differential scanning calorimetry(DSC) and dynamic mechanical thermal analysis(DMTA). The glass transition temperatures of blends increased as the amount of PC increased. Each blend showed a single peak of tan δ in the glass transition region, suggesting that PTT and PC might be compatible.
폴리트리메틸렌 테레프탈레이트 / 폴리에틸렌 나프탈레이트 용융 블렌드
나상권,김정규,홍완해 한국공업화학회 2000 응용화학 Vol.4 No.1
Melt blends of poly(trimethylene terephthalate)(PTT) and poly(ethylene 2,6-naphthalate)(PEN) with various compositions were prepared at 275℃ using 40rpm for various mixing times. Transesterification and misibility of blends of PTT with PEN was studied by dynamic mechanical thermal analysis(DMTA) and NMR.
에스테르 교환 반응 및 Poly(trimethylene trerephthalate) 의 축중합 반응 속도에 관한 연구
나상권,김정규,홍완해 한국공업화학회 2000 응용화학 Vol.4 No.1
The transesterification of dimethyl terephthalate(DMT) with 1,3-propane diol(PDO) was invesigated in the presence of catalyst, titanium(IV) butoxide, at 175∼190℃. The degree of esterification reaction was measured by the output of methanol which was distilled from the reactor. The polycondensation of PTT was also investigated by the required current that mixing speed was kept constant, in the presence of titanium(IV) butoxide and thermal stabilizer at 260∼280℃.