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홍능표,홍진웅 대한전기학회 2003 전기학회논문지C Vol.52 No.10
- The double layers of SiO2/Si3N4 have superior charge storage stability than a single layer of SiO2. Many researchers are very interested in the charge storage mechanism of SiO2/Si3N4 [1,2]. In this paper, the electrical characteristics of thermal oxide and atmospheric pressure chemical vapor deposition (APCVD) of Si3N4 have been investigated and explained using high frequency capacitance-voltage measurements. Additionally, this paper will describe capacitance-voltage characteristics for double layers of SiO2/Si3N4 by "Athena", a semiconductor device simulation tool created by Silvaco, Inc.
이수원,홍진웅,홍능표 한국산업안전학회 2000 한국안전학회지 Vol.15 No.1
Recently, more advanced electronic elements become, they consume powerful and radiate more heat in devices. So the most suitable packaging technique is keenly needed. The most important purpose of packaging is to protect devices within a system for a long time and to prevent life of devices from external environments; floating ions such as humidity or sodium, and exposure from ultraviolet rays. In order to study the electrical properties of silicone gels often used as packing material due to the curing condition, volume resistivity and AC breakdown experiment are performed. Specimens are made up at several cured times and temperatures condition ; 0.5 [H], 1 [H] and 2[H] at 100[℃], 125[℃], 150[℃], 160[℃], 170[℃] and 180[℃]. It is confirmed that from volume resistivity experiment liquid silicone become get state at 90∼100[℃] and cured specimen for 1∼2[H] at 170[℃] are superior in electrical properties.