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Polyimide 기판을 이용한 ZnO:Al 박막 특성에 관한 연구
이동진,이재형,주정훈,이종인,정학기,정동수,송준태,Lee, Dong-Jin,Lee, Jae-Hyeong,Ju, Jung-Hun,Lee, Jong-In,Jung, Hak-Kee,Jung, Dong-Su,Song, Jun-Tae 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.8
Aluminuim doped zinc oxide(ZnO:AL)Films have been prepared on Polyimide(PI) and Coming 7059 glass substrates by r.f. magnetron sputtering method. The structural of the ZnO:Al films were studied in accordance with various deposition R.F power and working pressure by XRD, SEM. And The electrical and optical properties of ZnO:Al films were characterized by Hall effect and UN visible spectrophotometer measurements, ZnO:Al films had were hexagonal wurtzite structure and dominant c-axis orientation. The R.f power and working pressure for optimum condition to fabricate the transparent conductive films using a PI substrate were 2 mTorr and 100W, respectively. The resistivity of the ZnO:Al films prepared under this condition were $9.6{\times}10^{-4}{\Omega}cm$. The optical transmittance of 400nm thick films at 550nm is ${\sim}85 %$.
연구논문(硏究論文)(재록(再錄)) : 의약화학 ; Interleukin-5 억제 효과를 위한 chalcones의 필요구조
양현모 ( Hyun Mo Yang ),심혜림 ( Hye Rim Shin ),조수현 ( Soo Hyun Cho ),방성철 ( Seong Cheol Bang ),송규용 ( Gyu Yong Song ),주정훈 ( Jung Hun Ju ),김미경 ( Mi Kyeong Kim ),이승호 ( Seung Ho Lee ),류재춘 ( Jae Chun Ryu ),김영수 ( 영남대학교 약품개발연구소 2007 영남대학교 약품개발연구소 연구업적집 Vol.17 No.-