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경피신경자극치료기(TENS)의 기능별 주파수에 따른 교근과 피개상피의 혈류변화에 관한 연구
조성국,어규식,전양현,홍정표,Cho, Sung-Guk,Auh, Q-Schick,Chun, Yang-Hyun,Hong, Jung-Pyo 대한안면통증구강내과학회 2009 Journal of Oral Medicine and Pain Vol.34 No.1
The following results were obtained, after experimenting on change of masseter muscle and bloodstream epithelium with Transcutaneous Electrical Nerve Stimulator(TENS), among 16 male adults. 1. According to applying TENS, it was observed that bloodstream in muscle increases at 1.5, 3.0 Hz. 2. According to applying TENS, it was observed that concentration of moving blood cells in muscle increase at 1.5, 3.0, 6.0 Hz. 3. According to applying TENS, it was observed that velocity of bloodstream in muscle increases only at 1.5 Hz 4. Through experiment, applying TENS at level of 6.0 and 10.0 Hz, all bloodstream, concentration of moving blood cells, and velocity of bloodstream increasing rates were lower in muscle compared to of them in overlying epithelium; and especially increasing bloodstream and its velocity were most frequent at 6.0 Hz, and bloodstream of 10.0 Hz. From the results above when a physical therapy of TENS is carried out the frequency of 1.5, 3.0 H is effective, and as the frequency increases it is disadvantageous to the muscle.
Tetraethylorthosilicate 용액을 침적시킨 SnO2 후막형 가스감지소자의 아세토니트릴에 대한 선택성
박효덕,조성국,손종락,이덕동 ( Hyo Derk Park,Sung Guk Cho,Jong Rack Sohn,Duk Dong Lee ) 한국센서학회 1993 센서학회지 Vol.2 No.2
The SnO/A1z03/Nbzos thick film devices added with SiO₂ were fabricated by means of the dipping into Si(CzHso)a solution and the sensing characteristics of the thick film devices to CH₃CN vapor was investigated The reaction products of CH₃CN by the heating reaction on the thick film devices were analyzed by the FT-IR method using gas reaction cell. The products of CH₃CN vapor by the surface reaction on the thick film devices were CO₂, H₂O, N₂O and the acids produced from NO_x and H₂O. Optimum processes of the thick film devices were determined by the investigation of the sensing characteristics to CH₃CN vapor. The thick film devices showed high selectivity to CH₃CN vapor and negative sensitivity by oxidizing agents (NO_x) produced during the reaction of CH₃CN vapor on the thick films.
SnO2 / Al2O3 / Nb2O5 후막소자의 Acetonitrile 감지특성
손종락,조성국,박효덕,이덕동 ( Jong Rack Sohn,Sung Guk Cho,Hyo Derk Park,Duk Dong Lee ) 한국화학공학회 1993 Korean Chemical Engineering Research(HWAHAK KONGHA Vol.31 No.6
The SnO₂/Al₂O₃/Nb₂O_5 thick film sensor was fabricated by means of screen printing method. The sensing characteristics of acetonitrile was influenced by the chemical species produced by the oxidation reaction of acetonitrile on the surface of metal oxide. From the result of observed infrared spectra, the products formed by the oxidation reaction of acetonitrile were found to be mainly CO₂, NH₃ and H₂O, which influenced the sensing properties. The SnO₂ sensor added with Nb₂O_5 exhibited the sensitivity of 94% at the operation temperature of 300℃ and showed higher selectivity to acetonitrile than to CO, SO₂, CH₄ and C₄H_(10). The thick film sensor which maintained for 30 days at the operation temperature 300℃ exhibited the resistance of 25±2 kΩ and sensitivity of 84% in 85 ppm of acetonitrile.
SnO2 후막소자의 감도특성에 미치는 SiO2 의 영향
손종락,조성국,박효덕,이덕동 ( Jong Rack Sohn,Sung Guk Cho,Hyo Derk Park,Duk Dong Lee ) 한국화학공학회 1994 Korean Chemical Engineering Research(HWAHAK KONGHA Vol.32 No.4
The SnO₂/Al₂O₃/Nb₂O_5 thick film devices added with SiO₂ were fabricated by dipping, sputtering and addition of SiO₂ powder, and the sensing characteristics to CH₃CN vapor was investigated. Among them, the device fabricated by dipping of Si(C₂H_5O)₄ solution showed high sensitivity and selectivity to CH₃CN vapor. From the results of infrared spectra, the products formed by the oxidation reaction of CH₃CN on the SnO₂/Al₂O₃/Nb₂O_5 thick film devices without addition of SiO₂ were found to be mainly CO₂, H₂O and NH₃, while on the SnO₂/Al₂O₃/Nb₂O_5 added with SiO₂, products such as CO₂, H₂O, N₂O, HNO₃ and HNO₂ were observed. The thick film devices added with SiO₂ showed high selectivity and negative sensitivity to CH₃CN vapor by means of the presence of nitrogen compounds produced through the oxidation reaction of CH₃CN. Optimum amount of Nb₂O_5 and operating temperature were 1.0 wt% and 300℃, respectively.
V2O5 - ZrO2 및 황산으로 개질된 V2O5 - ZrO2 의특성
손종락,배영일,조성국 ( Jong Rack Sohn,Young Il Pae,Sung Guk Cho ) 한국화학공학회 1993 Korean Chemical Engineering Research(HWAHAK KONGHA Vol.31 No.6
V₂O_5- ZrO₂ catalysts were prepared by dry impregnation of powdered Zr(OH)₄ with an aqueous solution of NH₄VO₃ followed by calcining in air, and V₂O_5-ZrO₂/SO₄^(2-) catalysts were prepared by modifying impregnated Zr(OH)₄ with H₂SO₄ followed by calcining in air. The characterization of prepared catalysts was performed by using FTIR. DSC-TGA, and XRD, and by the measurement of surface area. The addition of V₂O_5 to ZrO₂ and modification with H₂SO₄ shifted the phase transition of ZrO₂ from amorphous to tetragonal and from tetragonal to monoclinic to higher temperatures due to the interaction between ZrO₂ and V₂O_5(or H₂SO₄). Since V₂O_5 was dispersed on the surface of ZrO₂ up to 10 ㏖% of V₂O_5, any crystal phase of V₂O_5 even at the calcination temperature of 900℃ was not observed on the XRD patterns. However, in the case of sample containing 15 ㏖% of V₂O_5, V₂O_5 crystal phase appeared on XRD pattern from the calcination temperature of 700℃.