http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
백문철,차주연,조경익,권오준,Baek, Mun-Cheol,Cha, Joo-Yeon,Cho, Kyung-Ik,Kwon, Oh-Joon 한국전자통신연구원 1988 전자통신 Vol.10 No.3
투과전자현미경(TEM)의 관찰을 위한 반도체 시료의 박편제작기술에 대하여 언급하였다. 전자선을 투과할 수 있는 얇은 두께의 시편을 제작하는 일은 금속이나 생물학적인 재료에 비하여 반도체의 경우 많은 어려움이 따르며 특히 잘 부서지기 쉬운 특성 때문에 취급에 많은 주의를 요한다. 반도체를 대상으로 하여 일반적으로 사용되는 박편 제작기술에 대해 그 특성과 장단점 등을 조사하였다.
김경현,홍성의,백문철,조경익,최상식,양전욱,심규환,Kim, Kyung-Hyun,Hong, Sung-Ui,Paek, Moon-Cheol,Cho, Kyung-Ik,Choi, Sang-Sik,Yang, Jeon-Wook,Shim, Kyu-Hwan 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.7
We have investigated $Al_{0.25}Ga_{0.75}As/In_{0.2}Ga_{0.8}As$ structures for pseudomorphic high electron mobility transistor(pHEMT), which were grown by molecular beam epitaxy(MBE) and consequently annealed by rapid thermal anneal(RTA), using Hall measurement, photoluminescence, and transmission electron microscopy (TEM). According to intensity and full-width at half maximum maintained stable at the same energy level, the quantized energy level in $Al_{0.25}Ga_{0.75}As/In_{0.2}Ga_{0.8}As$ quantum wells was independent of the RTA conditions. However, the Hall mobility was decreased from $6,326cm^2/V.s\;to\;2,790cm^2/V.s\;and\;2,078cm^2/V.s$ after heat treatment respectively at $500^{\circ}C\;and\;600^{\circ}C$. The heat treatment which is indispensable during the fabrication procedure would cause catastrophic degradation in electrical transport properties. TEM observation revealed atomically non-uniform interfaces, but no dislocations were generated or propagated. From theoretical consideration about the mobility changes owing to inter-diffusion, the degraded mobility could be directly correlated to the interface scattering as long as samples were annealed below $600^{\circ}C$ lot 1 min.