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정중현,이종규 한국어업기술학회 1997 수산해양기술연구 Vol.33 No.3
The analytical solutions of the Fraunhofer Diffraction(FD) theory and the principle for measurement of the dispersion relation of plasma wave is presented. Especially, the method for measurement of low-frequency wave is discussed. The wavenumbers of the density fluctuations are obtained from the curve fitting between the expremental FD profile and theoretical one for each frequency component. In measurement of the wavenumber of the low -frequency region, the information of the wavenumber is easily obtained from the ratio of the intensity at = 0 to the intensity at =0.5. The millimeter wave FD apparatus was designed to measure low-frequency density fluctuations. The determined wavenumbers are in the range of =0.1~ 1.0cm. Thus, the millimeter wave FD method was shown to be useful for the measurement of low-frequency density fluctuations, which are impossible to be measured by using a convention. Thomson scattering. The obtained dispersion relations will be useful information for plasma waves.
정중현,김명욱,박승철,김근묵,엄영호,노삼규 연세대학교 자연과학연구소 1982 學術論文集 Vol.9 No.-
처음으로 반절연성 InP:Fe를 SSD법으로 생장시키었다. Fe를 각각 0.5와 1.0 wt-% 첨가한 결정의 비저항은 실온에서 각각 3.1×10^7와 1.5×10^7Ω·cm이었으며, 저항의 온도 위존성에서 얻은 Fe의 에너지 준위는 전도대의 바닥 아래로 0.66 eV이었다. For the first time we obtained the semi-insulating InP:Fe crystals grown by SSD method. Their resistivities were 3.1×10^7 and 1.5×10^7Ω·cm in the Fe-doped crystals with contents of 0.5 and 1.0 wt-%, respectively. Temperature dependence of the crystal revealed the energy level of Fe as 0.66 eV from the bottom of the conduction band.
Luminescence Properties of Mn2+-Doped Zn2SiO4 Thin Films Grown by Using Pulsed Laser Deposition
정중현,양현경,정종원,문병기,최병춘,이성수,김정환 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.3
Zn2SiO4:Mn2+ luminescent thin films were grown on Al2O3 (0001) substrates by using a pulsed laser deposition technique at substrate temperature of 600 ℃ under various oxygen pressures of 100, 200, 250, 300, 350 and 400 mTorr. The mechanism for the enhanced efficiency of the green emission from the Zn2SiO4:Mn2+ thin lms was investigated for various oxygen pressures. The crystallization, the surface morphology and the luminescent properties of Zn2SiO4:Mn2+ thin films are very dependent on the variation in the oxygen pressure. The enhanced luminescence for Zn2SiO4:Mn2+ thin films at an oxygen pressure of 400 mTorr may result not only from the improved crystallinity but also from reduced internal reflections caused by rougher surfaces. Also, the luminescent intensity and the surface roughness of the lms exhibited similar behaviors as functions of the oxygen pressure.
정중현,김진수,최병춘,문병기,전병억,조상복 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.3
Bismuth lanthanum titanate (Bi3.25La0.75Ti3O12, BLT) and W-doped bismuth lanthanum titanate (Bi3:25La0:75Ti2.95W0.05O12, BLTW) were prepared by using a solid state reaction method. The dielectric and the impedance relaxation were investigated by using dielectric and impedance spectroscopy. W doping on BLT decreased the low-frequency dielectric dispersions and electrical conductivity. Complex impedance plot of the BLT exhibits two impedance semicircular arc, while that of the BLTW ceramics exhibited one semicircular arc, which is related to the bulk properties of the grains. The low-frequency dielectric dispersion and the impedance relaxation for BLT and BLTW are explained by introducting an equivalent circuit.