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이용재,권상수,임재우,정연식 東義大學校産業技術開發硏究所 1995 産業技術硏究誌 Vol.9 No.-
Hot-carrier-induced MOSFET degradation depends strongly on the quality of the gate oxide. In this paper, hot-carrier-induced degradation by each other gate voltage stress characterized for p-channel MOSFET's with thin gate oxide. Gate voltage for DC stress condition was measured at maximum gate current and substrate current, respectively. From stress measurement results, it was found that the channel length by stress was shorten with the DAHC model of trapped electron and hole in the gate oxides. And, it was confirmed that degradation of p-MOSFET's was caused by gate voltage at maximum gate current larger than that of substrate current.