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鄭相九(Sang-Gu Jeong) 한국차학회 1995 한국차학회지 Vol.1 No.1
1. Introduction One of important causes of ascendancy of drinking tea during the time of Western Chin and North dynasty had the deep relation with pure and mental culture life and drinking tea of monks, and it was demonstrated that the great development of tea had deeper relation with Zen of the Zen sect during Tang age and also it was demonstrated that there was a doctrine, "Tea and Zen are the same taste." in the book entitled "Nan Pu Hsin Shu"by Ch'ien I during Sung age. and, the "Tea Drinking Method" by Chao Chou was demonstrated by citing the ancient happening of "Chao Chou-Ch'ing-Cha". 2. In the "What is Zen?", it was demonstrated that Zen was originated from the "Seon-na" of transliteration of "Dhyana" of Sanskrit language, which was shifted to "sayusu" or "Jeongryo" etc. and "It means thinking by concentrating one's mind on one object." And, it was emphasized that Zen has equal fixation and wisdom. 3. In the "A Study on Zen idelogy expressed on Korean tea poetry," the followings were deeply analyzed and appreciated, which was demon-strated: (1) Zen ideology expressed on tea poetry by Lee, Kyubo. (2) Zen ideology expressed on tea poetry by Won-gram, the highest monk. (3) Zen ideology expressed on tea poetry by Jinjong, the highest monk. (4) Zen ideology expressed on tea poetry by Jinkak, the highest monk. (5) Zen ideology expressed on tea poetry by Lee, saek. (6) Zen ideology expressed on tea poetry by Lee, sung-in. (7) Zen ideology expressed on tea poetry by Choeui, Zen master. (8) Zen ideology expressed on tea poetry by Seosan, great Buddhist priest. (9) Zen ideology expressed on tea poetry by Samyong, a great Bud-dhist priest. (10) Zen ideology expressed on tea poetry by Jeong, Da-san. (11) Zen ideology expressed on tea poetry by Kim, Myong-hui. (12) Zen ideology expressed on tea poetry by Shin, wi. (13) Zen ideology expressed on tea poetry by Lee, sang jeok. (14) Zen ideology expressed on tea poetry by Beomhae, Zen master. 4. Conclustion In case that tea-Zen culture makes man sincerely, it was emphasized that it is the most valuable spiritual culture with substantial value, and that it is the way to obtain the righ awareness which effects as the fun-damental and substantial invisible strength.
정상구 ( Sang Gu Jeong ),나석은 ( Seok Eun Na ),김시영 ( Si Young Kim ),주창식 ( Chang Sik Ju ) 한국화학공학회 2012 Korean Chemical Engineering Research(HWAHAK KONGHA Vol.50 No.5
Photocatalytic zinc oxide powders were prepared from precursor zinc acetate and ammonia solution at elevated temperature, 80˚C, by hydrothermal precipitation method. The effect of operating parameters, pH of ammonia solution and concentration of zinc acetate solution, on the characteristics of zinc oxide powders were experimentally examined. Zinc oxide powders prepared at the conditions of pH 11, zinc acetate concentration of 1.0 M, precipitation temperature of 80˚C, showed smallest average particle diameter of 3 um. SEM and XRD analysis confirmed that prepared zinc oxide has hexagonal rods structure, and Anatase type crystallinity. In addition, DRS and PL analysis showed that the zinc oxide has activity at the range of 200~400 nm of UV light. And the zinc oxide decomposed 57% of a food color stamp Brilliant blue FCF for 3 hours under the UV radiation.
이중 Gate를 갖는 Trench Emitter IGBT의 특성
강영수,정상구,Gang, Yeong-Su,Jeong, Sang-Gu 대한전기학회 2000 전기학회논문지C Vol.52 No.10
A dual gate trench emitter IGBT structure is proposed and studied numerically using the device simulator MEDICI. The on-state forward voltage drop latch-up current density turn-off time and breakdown voltage of the proposed structure are compared with those of the conventional DMOS-IGBT and trench gate IGBT structures. The proposed structure forms an additional channel and increases collector current level resulting in reduction of on -state forward voltage drop. In addition the trench emitter increases latch-up current density by 148% in comparison with that for the conventional DMOS-IGBT and by 83% compared with that for the trench gate IGBT without degradation in breakdown voltage when the half trench gate width(Tgw) and trench emitter depth(Ted) are fixed at $1.5\mum\; and\; 2\mum$, respectively
습도가 InP 턴넬 MIS 소자의 전기적 특성에 미치는 영향
임한조,정상구,김현남,Im, Han-Jo,Jeong, Sang-Gu,Kim, Hyeon-Nam 대한전자공학회 1984 전자공학회지 Vol.21 No.4
InP표면에 화확적 방법으로 성장시킨 산화막을 금속과 n-InP사이에 삽입시켜 제작한 InP 턴넬 MIS(m etal-insulator-semiconductor)소자의 전기적 특성과 그 불안정성을 조사하였다. 성장된 박막은 In2O3와 P2O5가 혼합된 형태를 이루고 있었으며, 그 두께는 약 200A°으로 추정되었다. 이 MIS다이오em의 순방향전류와 역방향전류는 진공중에서의 약간의 열처리로도 증가하였으며, 다습한 분위기에서는 감소되는 현상이 관측 되었다. 이와 같은 전류-전압 특성곡선의 변화 및 그 불안정성은 수분의 흡수에 따른 산화박막의 물리 화학적 특성과 경계면 상태밀도의 변차에 기인되는 현상임을 논의하였다. The electrical properties and their instability of InP tunnel MIS diodes fabricated by inserting the chemically grown oxide between metal and n-lnP (100) surface have been in-vestigated. The structure of the gown oxide was the mixture of In2O3 and P2O5, as was other low-temperature grown oxide, and its thickness was estimated to be the order of 200 $A^{\circ}$. The forward and reverse currents increased even with slight heat treatment of diodes in vacuum, and they were reduced when the diodes were exposed to humid ambient. It was discussed that the observed instability in I-V characteristics is due to a change of the physicochemical properties of the oxide film and of the interface states between oxide and InP according to the absorption of H2O.