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약물방출 관상동맥 스텐트 시술 후 스텐트 혈전증 발생 환자의 임상경과
김인수(In-Soo Kim),정명호(Myoung-Ho Jeong),한재복(Jae-Bok Han),장영일(Young Ill Jang),장성주(Seong-Joo Jang) 한국콘텐츠학회 2013 한국콘텐츠학회논문지 Vol.13 No.12
약물방출 스텐트 (drug-eluting stents, DES)는 일반금속 스텐트에 비하여 재협착을 현저하게 줄었지만, DES의 구조적인 특성으로 인한 스텐트 혈전증 (stent thrombosis, ST)이 증가한다고 알려져 있다. 혈전증 유형의 정의는 Early ST ; (EST)은 30일 이내, Late ST ; (LST)은 31일 이상에서 1년 이내 그리고 Very late ST ; (VLST)은 1년 이상으로 분류 하였다. 스텐트 세대별 (시장 출시와 스텐트 디자인, Polymer 향상에 따른) ST발생빈도, 임상 양상 및 예후를 알아보았다. 2003년 6월부터 2013년 6월까지의 전남대학교병원 심혈관센터에서 경피적 관상동맥 중재술을 시행 받은 10,273명 중 ST 발생은 134명(1.30%) 이었다. 세대별 발생빈도는 1세대에서 81명 (0.79%)으로 높았으며, 세대별 ST 유형은 1세대에서는 VLST의 발생률이 높았고 (p=0.002), 2세대에서는 EST와 LST의 발생률이 높았지만 (p=0.025), 3세대에서는 유의한 차이가 없었다(p=0.278). ST로 인하여 사망한 14명은 EST 10명 (18.2%), LST 2명(8.3%), VLST 2명 (3.6%)로서 EST에서 사망률이 높았다 (p=0.042). DES 시술 후 발생하는 ST는 1.3%이였고, VLST는 1세대 스텐트에서 많았으며, 입원 중 사망률은 EST에서 높았다. Stent thrombosis after successful drug-eluting stent(DES) implantation has been reported in around 1% of patients in clinical trials. However, the increased risk of ST associated with DES remains a matter of concern. From 1 June 2003 to 30 June 2013, we investigated clinical characteristics, in-hospital outcomes in 10,273 patients who underwent percutaneous coronary intervention in the Heart Center of CNUH. Overall incidence of ST was 1.30% (134 patients). The incidence of ST according to the stent generations and the timing of ST (n= total, early vs. late vs. very late) were 0.79% (n =81, 26 vs. 12 vs. 43) in first-generation, 0.38% (n=39, 21 vs. 9 vs. 9) in second-generation and 0.14% (n=14, 8 vs 3 vs. 3) in third-generation, (p=0.70). The mortality from ST was significantly higher in early ST group compared to the late and very late ST groups (18.2% vs. 8.3% vs. 3.6%, p=0.042). Overall incidence of ST after DES implantation was 1.30% (134 patients). The in-hospital mortality was significantly higher in early ST group compared to the late and very late ST groups.
플라즈마분자선에피탁시법을 이용한 사파이어 기판 위 질화알루미늄 박막의 에피탁시 성장
이효성,한석규,임동석,신은정,임세환,홍순구,정명호,이정용,Lee, Hyo-Sung,Han, Seok-Kyu,Lim, Dong-Seok,Shin, Eun-Jung,Lim, Se-Hwan,Hong, Soon-Ku,Jeong, Myoung-Ho,Lee, Jeong-Yong,Yao, Takafumi 한국재료학회 2011 한국재료학회지 Vol.21 No.11
We report growth of epitaxial AlN thin films on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. To achieve two-dimensional growth the substrates were nitrided by nitrogen plasma prior to the AlN growth, which resulted in the formation of a two-dimensional single crystalline AlN layer. The formation of the two-dimensional AlN layer by the nitridation process was confirmed by the observation of streaky reflection high energy electron diffraction (RHEED) patterns. The growth of AlN thin films was performed on the nitrided AlN layer by changing the Al beam flux with the fixed nitrogen flux at 860$^{\circ}C$. The growth mode of AlN films was also affected by the beam flux. By increasing the Al beam flux, two-dimensional growth of AlN films was favored, and a very flat surface with a root mean square roughness of 0.196 nm (for the 2 ${\mu}m$ ${\times}$ 2 ${\mu}m$ area) was obtained. Interestingly, additional diffraction lines were observed for the two-dimensionally grown AlN films, which were probably caused by the Al adlayer, which was similar to a report of Ga adlayer in the two-dimensional growth of GaN. Al droplets were observed in the sample grown with a higher Al beam flux after cooling to room temperature, which resulted from the excessive Al flux.
플라즈마분자선에피탁시법을 이용한 C-면 사파이어 기판 위질화인듐갈륨박막의 에피탁시 성장
신은정,임동석,임세환,한석규,이효성,홍순구,정명호,이정용,Shin, Eun-Jung,Lim, Dong-Seok,Lim, Se-Hwan,Han, Seok-Kyu,Lee, Hyo-Sung,Hong, Soon-Ku,Joeng, Myoung-Ho,Lee, Jeong-Yong,Yao, Takafumi 한국재료학회 2012 한국재료학회지 Vol.22 No.4
We report plasma-assisted molecular beam epitaxy of $In_XGa_{1-X}N$ films on c-plane sapphire substrates. Prior to the growth of $In_XGa_{1-X}N$ films, GaN film was grown on the nitride c-plane sapphire substrate by two-dimensional (2D) growth mode. For the growth of GaN, Ga flux of $3.7{\times}10^{-8}$ torr as a beam equivalent pressure (BEP) and a plasma power of 150 W with a nitrogen flow rate of 0.76 sccm were fixed. The growth of 2D GaN growth was confirmed by $in-situ$ reflection high-energy electron diffraction (RHEED) by observing a streaky RHEED pattern with a strong specular spot. InN films showed lower growth rates even with the same growth conditions (same growth temperature, same plasma condition, and same BEP value of III element) than those of GaN films. It was observed that the growth rate of GaN is 1.7 times higher than that of InN, which is probably caused by the higher vapor pressure of In. For the growth of $In_xGa_{1-x}N$ films with different In compositions, total III-element flux (Ga plus In BEPs) was set to $3.7{\times}10^{-8}$ torr, which was the BEP value for the 2D growth of GaN. The In compositions of the $In_xGa_{1-x}N$ films were determined to be 28, 41, 45, and 53% based on the peak position of (0002) reflection in x-ray ${\theta}-2{\theta}$ measurements. The growth of $In_xGa_{1-x}N$ films did not show a streaky RHEED pattern but showed spotty patterns with weak streaky lines. This means that the net sticking coefficients of In and Ga, considered based on the growth rates of GaN and InN, are not the only factor governing the growth mode; another factor such as migration velocity should be considered. The sample with an In composition of 41% showed the lowest full width at half maximum value of 0.20 degree from the x-ray (0002) omega rocking curve measurements and the lowest root mean square roughness value of 0.71 nm.
플라즈마분자선에피탁시법으로 성장한 산화비스무스아연 박막의 구조특성
임동석,신은정,임세환,한석규,이효성,홍순구,정명호,이정용,조형균,Lim, Dong-Seok,Shin, Eun-Jung,Lim, Se-Hwan,Han, Seok-Kyu,Lee, Hyo-Sung,Hong, Soon-Ku,Joeng, Myoung-Ho,Lee, Jeong-Yong,Cho, Hyung-Koun,Yao, Takafumi 한국재료학회 2011 한국재료학회지 Vol.21 No.10
We report the structural characterization of $Bi_xZn_{1-x}O$ thin films grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. By increasing the Bi flux during the growth process, $Bi_xZn_{1-x}O$ thin films with various Bi contents (x = 0~13.17 atomic %) were prepared. X-ray diffraction (XRD) measurements revealed the formation of Bi-oxide phase in (Bi)ZnO after increasing the Bi content. However, it was impossible to determine whether the formed Bi-oxide phase was the monoclinic structure ${\alpha}-Bi_2O_3$ or the tetragonal structure ${\beta}-Bi_2O_3$ by means of XRD ${\theta}-2{\theta}$ measurements, as the observed diffraction peaks of the $2{\theta}$ value at ~28 were very close to reflection of the (012) plane for the monoclinic structure ${\alpha}-Bi_2O_3$ at 28.064 and the reflection of the (201) plane for the tetragonal structure ${\beta}-Bi_2O_3$ at 27.946. By means of transmission electron microscopy (TEM) using a diffraction pattern analysis and a high-resolution lattice image, it was finally determined as the monoclinic structure ${\alpha}-Bi_2O_3$ phase. To investigate the distribution of the Bi and Bi-oxide phases in BiZnO films, elemental mapping using energy dispersive spectroscopy equipped with TEM was performed. Considering both the XRD and the elemental mapping results, it was concluded that hexagonal-structure wurtzite $Bi_xZn_{1-x}O$ thin films were grown at a low Bi content (x = ~2.37 atomic %) without the formation of ${\alpha}-Bi_2O_3$. However, the increased Bi content (x = 4.63~13.17 atomic %) resulted in the formation of the ${\alpha}-Bi_2O_3$ phase in the wurtzite (Bi)ZnO matrix.
조연동(Yeon-Dong Cho),박재권(Jee-Kwon Park),양석철(Seok-Chul Yang),정명호(Myoung-Ho Jung),김용철(Yong-Chol Kim),문정수(Jeong-Soo Moon) 한국차학회 2006 한국차학회지 Vol.12 No.3
차나무의 몇가지 품종에 대한 영양계 번식방법 중 삽목기술 개선을 위해 삽목시기(녹지삽과 숙지삽), 발근 촉진을 위한 IAA, NAA, IBA등의 생장조정제의 종류 및 처리효과를 검토하여 차나무 우량묘목 생산체계를 정립하고자 한 결과는 다음과 같았다. 삽수채취시기에 따른 효과는 녹지삽이 숙지삽에 비해 발근율과 생존율이 90.6%, 89.5%로 높았으며, 뿌리생장도 녹지삽에서 큰 차이를 나타냈다. 생장조정제의 처리 효과는 IBA>NAA>IAA>무처리 순으로 나타났으며, 순간침지 삽목기술은 이용이 쉽고 평균적인 발근과 생육 효율이 매우 양호하였다. 삽목번식시 품종별 발근 및 생육을 고려할 때, 사에미도리는 논ㄱ지삽이 좋았으며, 후슌은 숙지삽도 권장할 만 하였다. The study was conducted to investigate the effect of growth regulators on rooting Tea cultivars(Camellia sinensis) by hardwood and softwood cutting. The growth regulators were used IAA, NAA, IBA etc. Cutting was prepared 2 node size and a tip cut with 45˚. Cutting medias were consisted of volcanic soil in Juju. The growth regulators were solved in (99%) absolute ethyl alcohol with concentrations of 3,000mg L⁻¹. After dipping in the solutions for 2~3 second(namely quick dip method), the cuttings were inserted into cutting media. The results are summarized as follows ; During the cutting period, Softwood cutting showed the best rooting ratio and survival ratio. at that time, rooting ratio was 90.6% and survival ratio was 89.5%. The growth of root was the value at Softwood cutting. The result of growth regulators shown the effect on increase of root growth in IBA>NAA>IAA>control plot. At the cutting with quick dip method, the top and root of growth regulators treatment plot was better than those of control plot. At the cutting time of optimum recommended, Saemidori was good at softwood cutting.