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W-Cu 합금의 액상소결을 위한 새로운 공정의 개발:유동층 환원법
인태형,이석운,주승기,Ihn, Tae-Hyoung,Lee, Seok-Woon,Joo, Seung-Ki 한국재료학회 1994 한국재료학회지 Vol.4 No.4
1$\mu \textrm{m}$이하의 텅스텐 분말에 구리를 균일하게 코팅하는 공정을 새로이 개발했다. 구리가 코팅된 $\mu \textrm{m}$이하의 텅스텐 분말을 이용하여 액상소결하였으며, 구리가 균일하게 분포된 W-Cu합금을 얻을 수있었다. 본 연구에서 개발된 방법에 의해 구리의 함유량을 10wt.%이하로 낮추면서도 균일한 W-Cu합금을 얻을 수 있었으며, 특히 코발트를 같은 방식에 의해 첨가하면 구리액상이 형성된 후 급격히 치밀화하여 96% 이상의 상대밀도를 갖는 W-Cu 합금을 제작하는데 성공하였다. 코발트 첨가에 의한 급격한 치밀화의 증가는 텅스텐과 구리액상 사이의 접착성 향상에 기인하는 것으로 밝혀졌다. A new process for uniform coating of copper to submicron tungsten powder has been developed. W-Cu alloy where copper can be uniformly distibuted has been made by the liquid phase sintering of thus prepared tungsten powder. It has been found that copper content can be lowered less than IOwt. % in our new process, maintaining the uniform distribution of copper in W-Cu alloy. Relative density above 96% was obtained after the liquid phase sintering when small amount of cobalt was added. It was revealed that the rapid increase of densification rate was due to the enhancement of wettability between tungsten particle and liquid copper.
인태형,신진욱,이병일,주승기 대한전자공학회 1997 電子工學會論文誌, D Vol.d34 No.5
Low temperature activation of dopants which were doped using ion mass doping system in amorphous silicon(a-Si) thin films was investigated. With a 20.angs.-thick Ni film on top of the a-Si thin film, the activation temperature of dopants lowered to 500.deg. C. When the doping was performaed after the deposition of Ni thin film on the a-Si thin films (post-doping), the activation time was shorter than that of dopants mass, the activation time of the dopants doped by pre-doping method increased. It turned NiSi2 formation, while the decrease of activation time was mainly due to the enhancement of the NiSi2 formation by mixing of Ni and a-Si at the interface of Ni and a -Si thin during the ion doping process.
금속 유도 측면 결정화에 의해 유리기판 위에 제작된 저온(45$0^{\circ}C$) 다결정 박막 트랜지스터에 관한 연구
김태경,인태형,이병일,주승기 대한전자공학회 1998 電子工學會論文誌, D Vol.d35 No.5
Poly-Si TFT's could be fabricated on glass substrates by metal induced lateral crystallization (MILC) method at 450.deg. C. Channel area of the poly-Si TFT's was laterally crystallized from source and drain areas, where a thn nickel film was deposited. Dopants activation for the formation of source and drain region could be achieved by thermal annealing at 450.deg. C after the ion mass doping of phosphorus. The field effect mobility of thus formed N-channel poly-Si TFT's was 76cm$^{2}$/Vs, and the on/off current ratio was higher than 7E6.
W-Cu 의 액상소결시 코발트 첨가에 의한 치밀화 촉진
주승기,이석운,인태형 대한금속재료학회(대한금속학회) 1993 대한금속·재료학회지 Vol.31 No.10
In order to obtain uniformly distributed tungsten-copper powder, the submicron tungsten powder was coated with copper by a newly developed process : fluidized bed reduction. Tungsten powder was initially coated with copper dichlorides and then reduced in fluidized beds by hydrogen gas flow. By the same method, cobalt was added to this binary alloy for the purpose of altering the chemical relations between tungsten and copper. In case of 75W-25Cu, full densification could not be attained even after the prolonged sintering of 4 hours at 1200 C because of a large wetting angle of copper on tungsten. The addition of cobalt of 0.5 weight percent, however, considerably enhanced the densification of 75W-24. 5Cu-0.5Co and high density above 95% was attainable within ramping-up to 1200℃. The enhancement of sintering by cobalt addition was revealed to result from the decrease of the wetting angle of liquid copper, which was due to the formation of an intermetallic compound between tungsten and cobalt dissolved in liquid copper.