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이지공,이성필 한국전기전자재료학회 2003 전기전자재료학회논문지 Vol.16 No.12
Crystalline carbon nitride films have been deposited by RF reactive magnetron sputtering system with negative DC bias. The carbon nitride films deposited on various substrates showed ${\alpha}$- C$_3$N$_4$,${\beta}$-C$_3$N$_4$ and lonsdaleite structures through XRD and FTIR We can find the grain growth of hexagonal structure from SEMI photographs, which is coincident with the theoretical carbon nitride unit cell. When nitrogen gas ratio is 70 % and RF power is 200 W, the growth rate of carbon nitride film on quartz substrate is about 2.1 $\mu\textrm{m}$/hr.
이지공,하세근,김정훈,이성필 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.5
Crystalline carbon nitride films were attempted for an application of humidity sensors. The films were deposited on $Al_2$O$_3$substrate having intermigrated electrodes by reactive rf magnetron sputtering system. The film revealed a good humidity-resistance characteristics as well as humidity-capacitance ones in the humidity range of 10∼95 RH(%). Temperature dependence was also investigated. These results suggest that the carbon nitride film has a possibility for new humidity-sensitive material.
Surface Analysis and Humidity-Sensing Properties of Carbon Nitride Films for Microsensors
이지공,이성필 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.47 No.3
Carbon nitride lms were deposited on silicon substrate by a reactive RF magnetron sputtering system with DC bias for microsensors. Surface analysis of deposited flms was performed by XRD, SEM, and TEM. The lm had good uniformity and small grain size of about 30 nm. EDS analysis revealed that the chemical state of the carbon nitride lm was C2N. The impedance of a CNx humidity sensor which had micro-holes decreased from 249.4 k to 14.2 k in the relative humidity range from 5 % to 95 %. As the sensing area of the sensor decreased, the sensitivity slope increased proportionally. Hysteresis was about 8 % FSO, and adsorption and desorption time were about 79 sec and 90 sec, respectively. Experimental results indicate that CNx flms can be a new candidate for Si-based micro-humidity sensors.
이지공,이상훈,이성필,Lee, Ji-Gong,Lee, Sang-Hoon,Lee, Sung-Pil 한국융합신호처리학회 2008 융합신호처리학회 논문지 (JISPS) Vol.9 No.2
본 연구에서는 $0.8{\mu}m$ 아날로그 혼합 CMOS 기술에 의한 2단 연산 증폭기를 가진 집적화된 습도센서 시스템을 설계 및 제작하였다. 시스템은 28핀 및 $2mm{\times}4mm$의 크기를 가졌으며, 휘스톤 브릿지형 습도센서, 저항형 습도센서, 온도센서 및 신호의 증폭과 처리를 위한 연산증폭기를 단일 칩에 구성하였다. 기존의 CMOS 공정에 트렌치형의 감지 영역을 형성하기 위해 폴리-질화 에치 스탑 공정을 시도하였다. 이러한 수정된 기술은 CMOS 소자의 특성에 영향을 주지 않았고, 표준 공정으로 동일 칩 상에 센서와 시스템을 제작할 수 있도록 하였다. 연산증폭기는 이득 폭이 5.46 MHz 이상, 슬루율이 10 V/uS 이상으로 센서를 동작하기에 안정된 특성을 보였다. N형 습도감지 전계효과 트랜지스터의 드레인 전류는 상대습도가 10%에서 70%로 변화할 때 0.54mA에서 0.68 mA로 변화하였다. Integrated humidity sensor system with two stages operational amplifier has been designed and fabricated by $0.8{\mu}m$ analog mixed CMOS technology. The system (28 pin and $2mm{\times}4mm$) consisted of Wheatstone-bridge type humidity sensor, resistive type humidity sensor, temperature sensors and operational amplifier for signal amplification and process in one chip. The poly-nitride etch stop process has been tried to form the sensing area as well as trench in a standard CMOS process. This modified technique did not affect the CMOS devices in their essential characteristics and gave an allowance to fabricate the system on same chip by standard process. The operational amplifier showed the stable operation so that unity gain bandwidth was more than 5.46 MHz and slew rate was more than 10 V/uS, respectively. The drain current of n-channel humidity sensitive field effect transistor (HUSFET) increased from 0.54 mA to 0.68 mA as the relative humidity increased from 10 to 70 %RH.
Plasma Characterization of Facing Target Sputter System for Carbon Nitride Film Deposition
이지공,이성필 한국전기전자재료학회 2004 Transactions on Electrical and Electronic Material Vol.5 No.3
The plasma properties in the facing target sputtering system during carbon nitride film deposition have been investigated. The ionized nitrogen species of the deposited films increased with increasing discharge current and were independent of the nitrogen pressure. The nitrogen content in the films did not vary significantly with the variation of nitrogen gas. The electron temperature was high close to that in the inter-cathode region, reduced as the electrons moved away from the most intense region of magnetic confinement and increased again outside this region. Calculations based on the film composition showed that the ion to carbon atom ratio at the substrate was about 50 and that the ratio between the ionized and neutral nitrogen molecules was about 0.25.
다결정 실리콘 카바이드의 열전 특성 및 응용에 관한 연구
이지공(JI Gong Lee) 산업기술교육훈련학회 2018 산업기술연구논문지 (JITR) Vol.23 No.3
We have fabricated n-poly-SiC/p-poly-Si thermopiles on Si substrates and investigated their thermoelectric characteristics. Calorimetric gas flow sensors usingn-poly-SiC/p-poly-Si thermopiles were realized and characterized. The highest Seebeck coefficient of n-poly-SiC/p-poly-Si was 2180μV/K, obtained using a heater power of 148mW. The fabricated flow sensors exhibit operational capacity up to 1000sccm and sensitivity of -14.5μV/sccm for a heater current of 3mA in the 700sccm range. The response time of the sensors(40ms) was faster than the mass flow controller’s signal. The presented current-voltage characteristics of the thermopiles reveal good ohmic contact. Our results indicate that the proposed structure using SiC thermopiles is not only a good candidate for a new micro flow sensor, but also has potential for a variety of applications in the field of microelectromechanicalsystems(MEMS) sensors.
김성엽,이지공,장중원,이성필,Kim, Sung-Yeop,Lee, Ji-Gong,Chang, Choong-Won,Lee, Sung-Pil 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.5
Physical properties and impedance-humidity characteristics of carbon nitride films were investigated for micro-humidity-sensors. Carbon nitride films were deposited in low temperature and low power for application of semiconductor fabrication process, and empirical equation was proposed for thickness evaluation. Deposited films had an uniform and compact surface comparing with previously reported results, which was expected a good candidate for humidity sensing materials. Carbon nitride humidity sensors based on Si substrate revealed good humidity-impedance characteristics with a wide range of relative humidity and showed low hysteresis.
허원녕,이지공,이성필 慶南大學校 附設 工業技術硏究所 2003 硏究論文集 Vol.21 No.1
poly-4 vinylpyridine과 1.4-dichlorobutane의 조성을 변화시켜 공중합(co-polymerizaton)시키고 methanol (+PVP)에 용해시켜 감습물질을 제조하였다. 알루미나 기판에 Au전극을 형성한 후 제조된 감습물질을 dipping함으로써 폴리머형 습도센서를 제작하였다. Poly-4 vinylpyridine, 1.4-dichlorobutane 및 methanol의 함량비에 따른 감습특성을 조사한 결과 poly-4 vinylpyridine : 1.4-dichlorobutane : methanol의 중량비가 1: 1: 0.5인 소자의 경우, 상대습도 30%-90%로 변화했을 때 임피던스 변화는 275 ㏀에서 2.5 ㏀으로 변화하였다. PCB 기판 보다 알루미나 기판에서 히스테리시스 특성이 우수함을 알 수가 있었고, poly-4 vinylpyridine : 1.4-dichlorobutane : methanol의 중량비가 1: 1: 0.5인 소자의 경우 히스테리시스가 1.5% 이하로 나타났다. Humidity sensing materials which were co-polymerized poly-4 vinylpyridine. 1.4-dichlorobutane and methanol(+PVP) were prepared. Polymer humidity sensors were fabricated as dipping method on alumina substrates formed Au electrode. When the content ratio of poly-4 vinylpyridine, 1,4-dichlorobutane and methanol was 1: 1: 0.5, the impedance of the sample changed 275 ㏀ to 2.5 ㏀ in the relative humidity range of 30% - 90%. We can observe that the hysteresis characteristics of sensors with alumina substrate were less than 1.5% and better than the sensor with PCB one.