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Vapor Transport Epitaxy에 의한 GaN의 성장과 특성
이재범,김선태,Lee, Jae-Bum,Kim, Seon-Tai 한국재료학회 2006 한국재료학회지 Vol.16 No.8
Highly c-axis oriented poly-crystalline GaN with a dimension of $1{\sim}3\;{\mu}m$ was deposited on $c-Al_2O_3$ substrate by vapor transport epitaxy (VTE) method at the temperature range of $900{\sim}1150^{\circ}C$. XRD intensities from (00'2) plane of grown GaNs were increased with reaction conditions which indicate the improvement of the crystal quality. In the PL spectra measured at 10 K, the spectrum composed with the neutral-donor bound exciton-related emission at 3.47 eV, crystal defect-related emission band at 3.42 eV and with its phonon replicas. The fact that intensity of $I_2$ were increased and FWHM were decreased with growth conditions means that the quality of GaN crystals were improved. With this simple VTE technology, we confirm that the GaNs were simply deposited on sapphire substrate and crystal quality related to optical properties of GaN grown by VTE were relatively good. PL emission without deep level emission in spite of polycrystalline structure can be applicable to the fabrication of large area and low cost optical devices using poly-GaN grown by VTE.
이재범,김선태,Lee, Jae-Bum,Kim, Seon-Tai 한국재료학회 2006 한국재료학회지 Vol.16 No.12
In this study, we report a method to synthesize the aluminum nitride (AlN) powders from aluminum oxyhydroxide (AlOOH). AlOOH powders were prepared from the aluminum hydroxide ($Al(OH)_3$) by heattreatment at the reaction temperature of $350^{\circ}C$. Simple heat treatment of AlOOH in the flow of $NH_3$ gas leads to the formation of hexagonal AlN powders through intermediate conversion of ${\delta}-,\;{\gamma}-$ and ${\alpha}-Al_2O_3$. The FTIR transmission spectra show a broad peak related to Al-N bonds centered around 690 $cm^{-1}$ confirming the presence of AlN. The major peaks in Raman spectra were observed in 250 $cm^{-1}$ and 659 $cm^{-1}$. From the results, synthesized powders from the AlOOH powders were confirmed AlN powders.
여행사종사원들의 진로준비행동과 진로적응성 간의 영향관계 분석
김종상(Kim, Jong-Sang) 한양대학교 관광연구소 2018 觀光硏究論叢 Vol.30 No.4
본 연구는 여행사종사원들의 진로준비행동과 진로적응성 간의 영향관계를 분석하여 여행기업의 인적자원개발에 시사점을 제공하기 위한 목적으로 수행되었다. 연구방법은 정량적 연구방법을 선정하여 회귀분석 방법으로 분석하였다. 그 결과, 도구준비행동을 제외한 정보수집행동과 목표달성행동이 진로적응성의 목표의식, 대인관계, 직무능력, 긍정적 태도에 영향을 미치는 것으로 나타났다. 여행사종사원들은 진로준비과정에서 실무학습을 수행하는 것 보다, 여행사 직업관련 정보수집행동과 입사지원, 면접수행 등을 의미하는 목표달성행동을 중요하게 인식하고 있었다. 이러한 결과로부터 정보수집행동과 목표달성행동은 단순히 채용정보만을 수집하고 여행사를 선택하여 입사지원등을 수행하는 것이 아니라 변화하는 직무특성과 기업의 특성을 체험하는 행동으로 정의될 수 있음을 인식할 수 있었다. The purpose of this study was to analyze the relationship between career preparation behavior and career adaptability of travel agency employees to provide implications for the development of human resources for travel companies. To empirically test the data, regression analysis was used. The results showed that information collection behavior and goal attainment behavior, excluding tool preparation behavior, affect the sense of goals, interpersonal relationships, job competency, and positive attitude. Rather than conducting major study in preparation for the career path, travel agency employees were aware of the importance of collecting about job information related to travel agency, applying for employment, and conducting interviews. From these results, information collection behavior and goal attainment behavior can be defined as an act to experience changing job characteristics and corporate characteristics rather than simply collect employment information and select travel agencies to provide job support.
이재범,김선태,Lee Jaebum,Kim Seontai 한국재료학회 2005 한국재료학회지 Vol.15 No.5
Gallium oxyhydroxide (GaOOH) powders were heat-treated in a flowing ammonia gas to form GaN, and the reaction kinetics of the oxide to nitride was quantitatively determined by X-ray diffraction analysis. GaOOH turned into intermediate mixed phases of $\alpha-\;and\;\beta-Ga_2O_3$, and then single phase of GaN. The reaction time for full conversion $(t_c)$ decreased as the temperature increased. There were two-types of rapid reaction processes with the reaction temperature in the initial stage of nitridation at below $t_c$, and a relatively slow processes followed over $t_c$ does not depends on temperatures. The nitridation process was found to be limited by the rate of an interfacial reaction with the reaction order n value of 1 at $800^{\circ}C$ and by the diffusion-limited reaction with the n of 2 at above $1000^{\circ}C$, respectively, at below $t_c$. The activation energy for the reaction was calculated to be 1.84 eV in the temperature of below $830^{\circ}C$, and decreased to 0.38 eV above $830^{\circ}C$. From the comparative analysis of data, it strongly suggest the rate-controlling step changed from chemical reaction to mass transport above $830^{\circ}C$.