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연구논문 : 검류를 첨가하여 제조한 비지 젤화물의 물리적 품질특성
이석운 ( Seong Won Lee ),한성희 ( Sung Hee Han ) 한국식품영양학회 2013 韓國食品營養學會誌 Vol.26 No.3
The physical properties of jellified soybean curd residue (Biji) with the addition of various gums were investigated to optimize the direct availability of a by-product of the tofu production process. The lightness (L value) of the jellified Biji prepared with various gums was approximately 77~80, regardless of the concentration of gum used. Especially at the concentration of 0.1% and 0.3%, a pectin showed a significantly higher value compared with other gelling agents (carrageenan and agar). The strength of samples prepared on the basis of carrageenan showed the value of 335~569 g/㎠ and 234~335 g/㎠ according to the addition of locust bean gum and xanthan gum, respectively. On the other hand, the samples made with pectin and agar were 134~272 g/㎠ and 50~215 g/㎠, respectively. Where locust bean gum was used as a viscous agent, the adhesiveness of sample prepared by adding carrageenan was greater than those made with pectin or agar. The values were -6.0~-11.0 g, -2.7~-10.2 g and -3.7~-7.0 g, respectively. Overall, the strength and adhesiveness of samples according to increase of the added amount of Biji showed constantly increasing trend regardless of the type of gelling agent used. In the sample containing carrageenan this trend was most noticeable.
W-Cu 의 액상소결시 코발트 첨가에 의한 치밀화 촉진
주승기,이석운,인태형 대한금속재료학회(대한금속학회) 1993 대한금속·재료학회지 Vol.31 No.10
In order to obtain uniformly distributed tungsten-copper powder, the submicron tungsten powder was coated with copper by a newly developed process : fluidized bed reduction. Tungsten powder was initially coated with copper dichlorides and then reduced in fluidized beds by hydrogen gas flow. By the same method, cobalt was added to this binary alloy for the purpose of altering the chemical relations between tungsten and copper. In case of 75W-25Cu, full densification could not be attained even after the prolonged sintering of 4 hours at 1200 C because of a large wetting angle of copper on tungsten. The addition of cobalt of 0.5 weight percent, however, considerably enhanced the densification of 75W-24. 5Cu-0.5Co and high density above 95% was attainable within ramping-up to 1200℃. The enhancement of sintering by cobalt addition was revealed to result from the decrease of the wetting angle of liquid copper, which was due to the formation of an intermetallic compound between tungsten and cobalt dissolved in liquid copper.
W-Cu 합금의 액상소결을 위한 새로운 공정의 개발:유동층 환원법
인태형,이석운,주승기,Ihn, Tae-Hyoung,Lee, Seok-Woon,Joo, Seung-Ki 한국재료학회 1994 한국재료학회지 Vol.4 No.4
1$\mu \textrm{m}$이하의 텅스텐 분말에 구리를 균일하게 코팅하는 공정을 새로이 개발했다. 구리가 코팅된 $\mu \textrm{m}$이하의 텅스텐 분말을 이용하여 액상소결하였으며, 구리가 균일하게 분포된 W-Cu합금을 얻을 수있었다. 본 연구에서 개발된 방법에 의해 구리의 함유량을 10wt.%이하로 낮추면서도 균일한 W-Cu합금을 얻을 수 있었으며, 특히 코발트를 같은 방식에 의해 첨가하면 구리액상이 형성된 후 급격히 치밀화하여 96% 이상의 상대밀도를 갖는 W-Cu 합금을 제작하는데 성공하였다. 코발트 첨가에 의한 급격한 치밀화의 증가는 텅스텐과 구리액상 사이의 접착성 향상에 기인하는 것으로 밝혀졌다. A new process for uniform coating of copper to submicron tungsten powder has been developed. W-Cu alloy where copper can be uniformly distibuted has been made by the liquid phase sintering of thus prepared tungsten powder. It has been found that copper content can be lowered less than IOwt. % in our new process, maintaining the uniform distribution of copper in W-Cu alloy. Relative density above 96% was obtained after the liquid phase sintering when small amount of cobalt was added. It was revealed that the rapid increase of densification rate was due to the enhancement of wettability between tungsten particle and liquid copper.
논문 : 전자, 자성 및 광학재료 ; Pd 유도에 의한 비정질 실리콘 박막 측면 결정화 기구에 관한 연구
김태경 ( Tae Kyung Kim ),이석운 ( Seok Woon Lee ),이병일 ( Byung Il Lee ),주승기 ( Seung Ki Joo ) 대한금속재료학회 ( 구 대한금속학회 ) 1996 대한금속·재료학회지 Vol.34 No.11
A new method of low temperature(≤500℃) crystallization of a-Si films was developed and crystallization mechanism was proposed. A few tens of micron long area from Patterned Pd films area could be crystallized in a short time at 500℃ by Metal-Induced Lateral Crystallization without any metal incorporations. The mechanism of the enhanced crystallization of a-Si film was studied by the microstructure analysis at the initial stage of the crystallization, by which the mechanism of MILC can be explained. In the case of Pd, crystallization of a-Si was initiated at the preformed Pd2Si in an a-Si matrix. The Pd2Si precipitates were separated into fine particles, and propagated into the a-Si matrix transforming a-Si into c-Si behind themselves. The growing direction of crystallized Si was <111>, which coincided with the epitaxial direction of Si with Pd2Si.