http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
AlGaN Barrier 및 GaN Buffer 두께 변화에 따른 AlGaN/GaN HEMT 소자의 트랜스컨덕턴스 및 항복전압 동작 특성 향상에 관한 시뮬레이션 연구
김지훈(Ji-Hun Kim),이서준(Seo-Jun Lee),김도형(Dohyung Kim),최준혁(Jun-Hyeok Choi),김경용(Kyeong-Yong Kim),김현석(Hyun-Seok Kim) 대한전자공학회 2023 대한전자공학회 학술대회 Vol.2023 No.6
In this study, we investigated the DC characteristics of AlGaN/GaN high-electron-mobility transistor (HEMT) by modulating the thicknesses of AlGaN barrier and GaN buffer. As the AlGaN barrier thickness was decreased, transconductance (gm) was increased due to the drop of distance between gate and channel. In addition, increase of GaN buffer thickness resulted in improvement of breakdown voltage owing to the reduction of substrate leakage current. Consequently, simulation results will help to design AlGaN/GaN HEMTs that show higher gm and breakdown characteristics.