http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Design and Analysis of Sub-10 nm Junctionless Fin-Shaped Field-Effect Transistors
김성윤,서재화,윤영준,유관민,김영재,은혜림,강혜수,김정준,조성재,이정희,강인만 대한전자공학회 2014 Journal of semiconductor technology and science Vol.14 No.5
We design and analyze the n-channel junctionless fin-shaped field-effect transistor (JL FinFET) with 10-nm gate length and compare its performances with those of the conventional bulk-type fin-shaped FET (conventional bulk FinFET). A three-dimensional (3-D) device simulations were performed to optimize the device design parameters including the width (Wfin) and height (Hfin) of the fin as well as the channel doping concentration (Nch). Based on the design optimization, the two devices were compared in terms of direct-current (DC) and radio-frequency (RF) characteristics. The results reveal that the JL FinFET has better subthreshold swing, and more effectively suppresses short-channel effects (SCEs) than the conventional bulk FinFET.