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내부 손실 저항이 있는 정상상태 모델을 이용한 LLC 공진형 하프 브리지 dc-dc컨버터의 최적 설계에 관한 연구
유정상,안태영,Yoo, Jeong Sang,Ahn, Tae Young 한국반도체디스플레이기술학회 2022 반도체디스플레이기술학회지 Vol.21 No.3
In this paper, the optimal design and circuit simulation verification results of an LLC resonant half-bridge dc-dc converter using a steady-state model with internal loss resistance are reported. Above all, the input/output voltage gain and frequency characteristic equations in the steady-state were derived by reflecting the internal loss resistance in the equivalent circuit. Based on the results, an LLC resonant half-bridge dc-dc converter with an input voltage of 360-420V, an output voltage of 54V, and a maximum power of 3kW was designed, and to verify the design, the PSIM circuit simulation was executed to compare and analyze the result. In particular, the operating range of the converter could be drawn from the frequency characteristic graph of the voltage gain, and when the converter was operated under light and maximum load conditions, it was confirmed that similar results were obtained by comparing simulation results and calculation results in the switching frequency characteristic graph. In addition, the change of the switching frequency with respect to the load current at each input voltage was compared with the calculated value and the simulation result. As a result, it was possible to confirm the usefulness of the analysis result reflecting the internal loss resistance proposed in this paper and the process of the optimal design.
토템폴 브릿지리스 PFC의 내부 손실 분석과 병렬 스위치를 사용한 효율 개선에 관한 연구
유정상,길용만,유승협,안태영,Yoo, Jeong Sang,Gil, Yong Man,Yu, Seung Hyup,Ahn, Tae Young 한국반도체디스플레이기술학회 2020 반도체디스플레이기술학회지 Vol.19 No.4
In this paper, a generalized efficiency equation was proposed to estimate the internal loss of the SMPS (switched-mode power supply) with 3 variables. The first variable was an internal loss not related to the load current such as auxiliary power, the second was a loss proportional to the current such as diode loss, and the third was a loss proportional to square of the current such as conduction loss. Especially, theoretical internal losses of the totem pole bridgeless PFC which is widely used for high efficiency SMPS were expressed as output function to compare generalized efficiency equation. In addition, in order to reduce the conduction loss of the switch, when a multiple switch were paralleled, the correlation with the efficiency was analyzed and shown as a graph. In order to confirm the degree of the parallel switch structure on the efficiency improvement, a 2kW class totem pole bridgeless PFC was constructed and the effectiveness of the analysis was confirmed by comparing the generalized efficiency equation and theoretical loss analysis results with experimental data.
20W급 보조전원용 다출력 QR 플라이백 컨버터의 출력전압 안정화에 관한 연구
유정상,길용만,김현배,안태영,Yoo, Jeong Sang,Gil, Yong Man,Kim, Hyun Bae,Ahn, Tae Young 한국반도체디스플레이기술학회 2021 반도체디스플레이기술학회지 Vol.20 No.3
In this paper, a 20W class multi-output QR flyback converter for auxiliary power supply was designed to stabilize 4 output voltages, and the efficiency and load characteristics were compared and analyzed. It was checked if each output affects other output characteristics through experiment. As a result, the experimental circuit reached a high efficiency of 82.5% or more at a load power of over 20W, and the maximum power loss was 2.6W. Consequently, it was confirmed that all of 4 output voltages of the multi-output QR flyback converter constructed in this paper were stabilized within 0.5% in full-load range, and each output was independently controlled in an electrically isolated state.
WBG 스위치를 적용한 소용량 플라이백 컨버터의 내부손실 특성과 효율 개선에 관한 연구
안태영,유정상,Ahn, Tae Young,Yoo, Jeong Sang 한국반도체디스플레이기술학회 2020 반도체디스플레이기술학회지 Vol.19 No.4
In this paper, efficiency and loss characteristics of GaN FET were reported by applying it into the QR flyback converter. In particular, for the comparison of efficiency characteristics, QR flyback converter experimental circuits with Si FET and with GaN FET were separately produced in 12W class. As a result of the experiment, the experimental circuit of the QR flyback converter using GaN FET reached a high efficiency of 90% or more when the load power was 2W or more, and the maximum efficiency was observed to be about 92%, and the maximum loss power was about 1.1W. Meanwhile, the efficiency of the experimental circuit with Si FET increased as the input voltage increased, and the maximum efficiency was observed to be about 82% when the load power was 9W or higher, and the maximum loss power was about 2.8W. From the results, it is estimated that that in the case of the experimental circuit applying the GaN FET switch, the power conversion efficiency was improved as the switching loss and conduction loss due to on-resistance were reduced, and the internal loss due to the synchronous rectifier was minimized. Consequently, it is concluded that the GaN FET is suitable for under 20W class power supply unit as a high efficiency power switch.