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기판의 결정구조에 따른 RF 스퍼터링 ZnO 박막의 성장과 미세구조 분석
유인성,소순진,박춘배,Yoo In-Sung,So Soon-Jin,Park Choon-Bae 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.5
To investigate the ZnO thin films which are interested in the next generation of short wavelength LEDs and Lasers, the ZnO thin films were deposited by RF sputtering system. At sputtering process of ZnO thin films, substrate temperature, work pressure respectively is $100^{\circ}C$ and 15 mTorr, and the purity of target is ZnO 5 N. The ZnO thin films were in-situ annealed at $600^{\circ}C$ in $O_2$ atmosphere. The thickness of ZnO thin films has implemented about $1.6{\mu}m$ at SEM analysis after in-situ annealing process. We have investigated the crystal structure of substrates, and so structural properties of ZnO thin films has estimate by using XRD, FWHM, FE-SEM and AFM. XRD and FE-SEM showed that ZnO thin films grown on substrates had a c-axis preferential orientation in the [0001] crystal direction. XPS spectra showed that ZnO thin film was showed a peak positions corresponding to the O1s and the Zn2p. As form above XPS, we showed that the atom ratio of Zn:O related 1:1.1504 on ZnO thin film, so we could obtained useful information for p-type ZnO thin film.
유인성,정종엽,박춘배,Yoo, In-Sung,Jeong, Jong-Yub,Park, Choon-Bae 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.12
In this study, our varistors based on M. Matsuoka's composition were fabricated with ZnO nano-powder whose sizes were 50 nm and 100 nm. Before fabrication of ZnO nano-powder varistors, structure and Phase were analyzed by FE-SEM and XRD with size of ZnO nano-powders to obtain manufacturing information to fabricate the first ZnO varistors using by nano-powders. As a results of these analyses, calcination and sintering temperatures were respectively designed at $600^{\circ}C\;and\;1050^{\circ}C$. ZnO nano-powder varistors were analyzed by SEM and XRD to measure the changes of microstructures and phase after sintered by out process conditions. Also, electrical properties of ZnO nano-powder varistors were obtained by capacitance-voltage, frequency-teal impedance, and current-voltage corves. Our ZnO nano-powder varistors had about 2.5 times of electric field at varistor voltage as compared with normal ZnO varistors fabricated with micro-powder. Also, leakage current and non-liner coefficient respectively had $2.0{\times}10^{-6}A/cm^{-2}$ and 41 for ZnO nano-powder varistors with 50 nm.
In-situ 분위기 Annealing에 따른 ZnO/Sapphire(0001) 박막의 구조적 특성 분석
왕민성,유인성,박춘배,Wang Min-Sung,Yoo In-Sung,Park Choon-Bae 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.8
In this paper the ZnO thin films, which has used spotlight of next generation short wavelength LEDs and semiconductor laser were deposited based on RF magnetron sputtering is described. The temperature at substrate and work pressure, which has implemented in sputtering process of ZnO thin films were settle down at $100^{\circ}C$ and 15 mTorr respectively. The ZnO 5N has used target. The thickness of ZnO thin films was about $1.6{\mu}m$ which was measured by SEM analysis after the sputtering process. Structural properties of ZnO thin films by in-situ and atmosphere annealing were analyzed by XRD. Transformation of grain size and surface roughness were observed by AFM. XPS spectra showed that ZnO thin film had a peak positions corresponding to the $Zn_{2p}$ and the $O_{1s}$. As form above XPS, we confirmed that post-annealing condition changed the atom ratio of Zn/O and microstructure in ZnO thin films.
In-situ SiN 박막을 이용하여 성장한 GaN 박막 및 LED 소자 특성 연구
김덕규,유인성,박춘배,Kim, Deok-Kyu,Yoo, In-Sung,Park, Choon-Bae 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.10
We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the physical properties of the GaN layer. We have also fabricate PN junction light emitting diode (LED) to investigate the effect of the SiN mask on its optical property By inserting a SiN mask, (102) the full width at half maximum (FWHM) decreased from 480 arcsec to 409 arcsec and threading dislocation (TD) density decreased from $3.21{\times}10^9\;cm^{-2}$ to $9.7{\times}10^8\;cm^{-2}$. The output power of the LED with a SiN mask increased from 198 mcd to 392 mcd at 20 mA. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GaN layer.