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GIS를 활용한 도시공공시설의 접근성 및 공간적 효율성 분석 - 용산구청 청사이전 사례를 중심으로
유용택,백성준 한국도시부동산학회(구 도시정책학회) 2013 도시부동산연구 Vol.4 No.1
This study is aimed to analyze whether the movement of targeted urban public facility could contribute to the improvement of facility users' convenience in terms of accessibility. To measure the accessibility, the total travel distance was estimated through multiplying network distance by the number of users as weights. Consequently the spatial efficiency was estimated. To calculate the network distance, the shortest distance was selected using GIS. On the other hand, highly frequented transit route in case of using public transportation was considered as the shortest distance. According to analytical results, the necessity of location and its systematization, in view of the accessibility of facility users, was meaningful in case of Yongsan-gu. Moreover, there was the difference between the accessibility of the shortest distance and that of public transportation, which was calculated based on GIS. The accessibility of public transportation is closer to spatial efficiency and equity. In conclusion, this study suggests the accessibility of public transportation be considered to judge the spatial efficiency of urban public facilities.
윤재강,유용택 대한전자공학회 1975 전자공학회지 Vol.12 No.6
Hall효과의 이용으로, 자계의 세기 또는 자속을 계측할 수 있는 자속계의 제조 및 특성조사를 시도하였다. Hall계수가 큰 InSb의 단결품을 Bridgemann법에 의하여 제작하고, 자장내에서 자계의 세기와 기전력 또는 전류를 계측한 결과, 만족할만한 감도와 직선적인 특성곡선을 얻었으며, 유사한 연구결과와 비교할때, 좋은 결과임을 알게 되었다. An Insb magnetic fluxmeter was made of InSb Single Crystal that was grown by Bridgemannmethods and then purified by vapor cone refining method. We investigated some properties of the InSb magneto fluxmeter. It was found that the resistivity and the Hall Coefficient of this single Crystal Were 4.4X10-2Ω and 4.5cm3/Coul, respectively, at room temperature. The Characteristic Curve of the InSb magnetic fluxmeter between the magnetic field the Hall voltage, with the Current flowing through the element a Parameter, had good lineanty i.e., We obtained a linear Calibration Curve of the flwmeter. The fluxmeter erved the purpose well enough up to 5 k-gaus. An Insb magnetic fluxmeter was made of InSb Single Crystal that was grown by Bridgemannmethods and then purified by vapor cone refining method. We investigated some properties of the InSb magneto fluxmeter. It was found that the resistivity and the Hall Coefficient of this single Crystal Were 4.4${\times}10^{-2}{\Omega}$ and $4.5\textrm{cm}^3$/Coul, respectively, at room temperature. The Characteristic Curve of the InSb magnetic fluxmeter between the magnetic field the Hall voltage, with the Current flowing through the element a Parameter, had good lineanty i.e., We obtained a linear Calibration Curve of the flwmeter. The fluxmeter erved the purpose well enough up to 5 k-gaus.
조제철,유용택 한국전기전자재료학회 1995 電氣電子材料學會誌 Vol.8 No.6
Red emitting CaS:Eu,S electroluminescent(EL) device prepared at 550.deg. C by an electron-beam evaporation technique, demonstrated luminance of 175cd/m$\^$2/ and efficiency of 0.311m/W with 3kHz drive. Luminance was increased with the increase of applied voltage and frequency. From the results of the PL spectrum and the EL spectrum, the CaS:Eu, S device showed emission peak near 640nm resulted from the transition of EU$\^$2+/ 4f$\^$6/5d.rarw.4f$\^$7/. The capacitance of the phosphor layer from the Sawyer-Tower circuit was 10.5nF/cm$\^$2/.
Al이 첨가된 Zinc Oxide박막의 투명전도막으로서의 응용
정운조,정용근,유용택 한국전기전자재료학회 1995 電氣電子材料學會誌 Vol.8 No.6
We fabricated Zinc Oxide transparent conductive thin films with 2wt% of A1203 doping using rf magnetron sputtering. And we investigated electrical and optical characteristics of them which were made with conditions ; rf power 60-300W, thickness of film 3000 11000.angs.. Resistivity, carrier concentration and Hall mobility were investigated for electrical characteristics. Transmittance and optical band gap were investigated with Spectrophotometer in the wavelength range between 200-900 nm. As a result, ZnO thin film fabricated with rf power of 180W and thickness of 5000.angs. showed the best properties. At the best condition, the sample has resistivity of 1*10$\^$-4/.ohm.cm and transmittance of 95% in the visible range.
R . F . magnetron sputtering 법으로 제작한 ITO 박막의 특성
정운조,박계춘,유용택 ( W . J . Jeong,G . C . Park,Y . T . Yoo ) 한국센서학회 1995 센서학회지 Vol.4 No.2
Indium Tin Oxide (ITO) thin films have been fabricated by the rf magnetron sputtering technique with a target of a mixture In₂O₃ (90mol%) and SnO₂ (10mol%). We prepared ITO thin films with substrate temperature 100, 300, 400, 500℃ and post-annealing temperature 300, 400, 500℃. And w e analyzed X-ray diffraction patterns, electrical properties, transmission spectra and SEM photographs. As a result, the crystallinity, electrical conductivity and transmittance of ITO thin films were improved with increasing substrate temperature. I3ut, as increasing post-annealing temperature in air. conductivity of the film was decreased. When the ITO thin film was fabricated with substrate temperature of 500℃ and thickness of 3,000 Å, its resistivity and transmittance were about 2×10^(-4)Ωcm and 55% or more, respectively.