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NF3 / H2O 원거리 플라즈마 건식 세정 조건 및 SiO2 종류에 따른 식각 이방 특성
오훈정,박세란,김규동,고대홍 한국반도체디스플레이기술학회 2023 반도체디스플레이기술학회지 Vol.22 No.4
We investigated the impact of NF3 / H2O remote plasma dry cleaning conditions on the SiO2 etching rate at different preparation states during the fabrication of ultra-large-scale integration (ULSI) devices. This included consideration of factors like Si crystal orientation prior to oxidation and three-dimensional structures. The dry cleaning process were carried out varying the parameters of pressure, NF3 flow rate, and H2O flow rate. We found that the pressure had an effective role in controlling anisotropic etching when a thin SiO2 layer was situated between Si3N4 and Si layers in a multilayer trench structure. Based on these observations, we would like to provide further guidelines for implementing the dry cleaning process in the fabrication of semiconductor devices having 3D structures.
NF<sub>3</sub> / H<sub>2</sub>O 원거리 플라즈마 건식 세정에 의한 SiGe 표면 특성 변화
박세란,오훈정,김규동,고대홍,Park, Seran,Oh, Hoon-Jung,Kim, Kyu-Dong,Ko, Dae-Hong 한국반도체디스플레이기술학회 2020 반도체디스플레이기술학회지 Vol.19 No.2
We investigated the Si<sub>1-x</sub>Ge<sub>x</sub> surface properties when dry cleaning the films using NF<sub>3</sub> / H<sub>2</sub>O remote plasma. After the dry cleaning process, it was found that about 80-250 nm wide bumps were formed on the SiGe surface regardless of Ge concentration in the rage of x = 0.1 ~ 0.3. In addition, effects of the dry cleaning processing parameters such as pressure, substrate temperature, and H<sub>2</sub>O flow rates were examined. It was found that the surface bump is significantly dependent on the flow rate of H<sub>2</sub>O. Based on these observations, we would like to provide additional guidelines for implementing the dry cleaning process to SiGe materials.
NF3 / H2O 원거리 플라즈마 건식 세정에 의한 SiGe 표면 특성 변화
박세란,오훈정,김규동,고대홍 한국반도체디스플레이기술학회 2020 반도체디스플레이기술학회지 Vol.19 No.2
We investigated the Si1-xGex surface properties when dry cleaning the films using NF3 / H2O remote plasma. After the dry cleaning process, it was found that about 80-250 nm wide bumps were formed on the SiGe surface regardless of Ge concentration in the rage of x = 0.1 ~ 0.3. In addition, effects of the dry cleaning processing parameters such as pressure, substrate temperature, and H2O flow rates were examined. It was found that the surface bump is significantly dependent on the flow rate of H2O. Based on these observations, we would like to provide additional guidelines for implementing the dry cleaning process to SiGe materials.
다공성 금속 샤워헤드가 적용된 상압플라즈마 화학기상증착법을 이용한 저온 다결정 실리콘 증착 공정
박형규,송창훈,오훈정,백승재,Park, Hyeong-Gyu,Song, Chang-Hoon,Oh, Hoon-Jung,Baik, Seung Jae 한국전기전자재료학회 2020 전기전자재료학회논문지 Vol.33 No.5
Modern thin film deposition processes require high deposition rates, low costs, and high-quality films. Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) meets these requirements. AP-PECVD causes little damage on thin film deposition surfaces compared to conventional PECVD. Moreover, a higher deposition rate is expected due to the surface heating effect of atomic hydrogens in AP-PECVD. In this study, polycrystalline silicon thin film was deposited at a low temperature of 100℃ and then AP-PECVD experiments were performed with various plasma powers and hydrogen gas flow rates. A deposition rate of 15.2 nm/s was obtained at the VHF power of 400 W. In addition, a metal foam showerhead was employed for uniform gas supply, which provided a significant improvement in the thickness uniformity.
산화 그래핀을 이용한 구리이온 흡착과 투과도 특성을 이용한 구리이온 농도 실시간 측정
김승두,류희중,오훈정,황완식,Kim, Seungdu,Ryou, Heejoong,Oh, Hoon-Jung,Hwang, Wan Sik 한국반도체디스플레이기술학회 2021 반도체디스플레이기술학회지 Vol.20 No.2
Various Cu ions are discharged into water from various industries, which results in a severe trouble for groundwater, soil, air, and eventually animals and humans. In this work, graphene oxide (GO) is introduced as a Cu removal absorber and the real-time monitoring method is demonstrated. The results show that GO is a very effective material to absorb Cu ions in the solution. In addition, the residual Cu ions in the solution is monitored via optical transmittance method, which well match with Inductively Coupled Plasma Mass Spectrometer (ICP-MS) analysis.
수열합성 공정으로 합성된 산화갈륨의 상변화에 따른 광촉매 특성
류희중,김선재,이인규,오훈정,황완식,Ryou, Heejoong,Kim, Sunjae,Lee, In Gyu,Oh, Hoon-Jung,Hwang, Wan Sik 한국반도체디스플레이기술학회 2021 반도체디스플레이기술학회지 Vol.20 No.2
GaOOH is obtained via hydrothermal synthesis procedure. The formed GaOOH is turned into α-Ga<sub>2</sub>O<sub>3</sub> at 500℃ annealing. As the annealing temperatures increase the α-Ga<sub>2</sub>O<sub>3</sub> is in part turned into β-Ga<sub>2</sub>O<sub>3</sub> and fully turned into β-Ga<sub>2</sub>O<sub>3</sub> after 1100℃. XPS and PL results reveal that heterojunction interface between α-Ga<sub>2</sub>O<sub>3</sub> and β-Ga<sub>2</sub>O<sub>3</sub> become maxim at 500℃ annealing condition, which result in the highest photocatalytic activity. The presence of heterojunction interface slows down the recombination process by separating photogenerated electron-hole pairs and thereby enhance the overall photocatalytic activity.
플라즈마 표면 처리를 이용한 TiO2 MOS 커패시터의 특성 개선
신동혁,조혜림,박세란,오훈정,고대홍 한국반도체디스플레이기술학회 2019 반도체디스플레이기술학회지 Vol.18 No.1
Titanium dioxide (TiO2) is a promising dielectric material in the semiconductor industry for its high dielectric constant. However, for utilization on Si substrate, TiO¬2 film meets with a difficulty due to the large leakage currents caused by its small conduction band energy offset from Si substrate. In this study, we propose an in-situ plasma oxidation process in plasma-enhanced atomic layer deposition (PE-ALD) system to form an oxide barrier layer which can reduce the leakage currents from Si substrate to TiO2 film. TiO2 film depositions were followed by the plasma oxidation process using tetrakis(dimethylamino)titanium (TDMAT) as a Ti precursor. In our result, SiO2 layer was successfully introduced by the plasma oxidation process and was used as a barrier layer between the Si substrate and TiO2 film. Metal-oxide-semiconductor (TiN/TiO2/P-type Si substrate) capacitor with plasma oxidation barrier layer showed improved C-V and I-V characteristics compared to that without the plasma oxidation barrier layer.