http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
변화된 산소분압으로 증착된 $SnO_2$ 박막의 표면과 계면에 관한 연구
오석균,신철화,정진,Oh, Seok-Kyun,Shin, Chul-Wha,Jeong, Jin 한국전기전자재료학회 2008 전기전자재료 Vol.21 No.12
This report examines the variations on structural properties of $SnO_2$ thin films deposited by using thermal chemical vapor deposition techniques with different oxygen flow gas. TEM showed some of the interface to be atomically rough. The aspects of the boundary shape and growth behavior agree well with the theory of interface growth. The electron diffraction showed that the roughness was changed as the different oxygen flow gas increased. These measurement results suggested that the number of interface facet and abnormal grain growth were related oxygen flow gas.
변화된 산소분압으로 증착된 SnO<sub>2</sub> 박막의 표면과 계면에 관한 연구
오석균,신철화,정진,Oh, Seok-Kyun,Shin, Chul-Wha,Jeong, Jin 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.12
This report examines the variations on structural properties of $SnO_2$ thin films deposited by using thermal chemical vapor deposition techniques with different oxygen flow gas. TEM showed some of the interface to be atomically rough. The aspects of the boundary shape and growth behavior agree well with the theory of interface growth. The electron diffraction showed that the roughness was changed as the different oxygen flow gas increased. These measurement results suggested that the number of interface facet and abnormal grain growth were related oxygen flow gas.
오석균,현승철,윤상현,김화택,김형곤,최성휴,윤창선,권숙일,Oh, Seok-Kyun,Hyun, Seung-Cheol,Yun, Sang-Hyun,Kim, Wha-Tek,Kim, Hyung-Gon,Choe, Sung-Hyu,Yoon, Chang-Sun,Kwun, Sook-Il 한국진공학회 1993 Applied Science and Convergence Technology Vol.2 No.2
SbSI : V, SbSeI : V, BiSI : V, BiSeI : V, SbSI : Cr, SbSeI : Cr, BiSI : Cr, BiSeI : Cr, SbSI : Ni, SbSeI : Ni, BiSI : Ni, 및 BiSeI : Ni 단결정을 고순도(99.9999%)의 성분원소에 혼합물을 투명석 영관내에 넣고, $1{\times}10^{-6}mmHg$의 진공에서 봉입하여 합성한 ingot를 사용하여, 수직 Bridgman 방법으로 성장시켰다. 성장된 단결정의 구조는 orthorhombic 구조이며, 광학적 energy band gap 구조는 간접전이형 이었고, energy gap의 온도의존성은 상전이에 관계되는 2개의 변곡점이 나타났으며, 연속된 영역에서는 Varshni 방정식을 만족하였다. 첨가한 3d 불순문(V, Cr, Ni)은 모결정의 $T_d$ 대칭을 갖는 주격자점에 +2가 ion으로 위치하며, 이들 ion의 energy 준위간의 전자전이에 의하여 불순물 광흡수 peak가 나타난다. Single crystals, SbSI : V, SbSeI : V, BiSI : V, BiSeI : V, SbSI : Cr, SbSeI : Cr, BiSI : Cr, BiSeI : Cr, SbSI : Ni, SbSeI : Ni, BiSI : Ni, and BiSeI : Ni were grown by the vertical Bridgman method. It is found that the grown single crystals have an orthorhombic structure and the indirect optical transitions. The temperature dependence of energy gap shows the two reflection point related with the phase transitions and is well fitted with Varshni equation in the continuous region. The optical absorption peaks due to the doped impurities (V, Cr and Ni) are respectively attributed to the electron transitions between the split energy levels of $V^{+2}$, $Cr^{+2}$ and $Ni^{+2}$ ions sited at $T_d$ symmetry of the host lattice.
오석균(Seok-Kyun Oh),현승철(Seung-Cheol Hyun),윤상현(Sang-Hyun Yun),김화택(Wha-Tek Kim),김형곤(Hyung-Gon Kim),최성휴(Sung-Hyu Choe),윤창선(Chang-Sun Yoon),권숙일(Sook-Il Kwun) 한국진공학회(ASCT) 1993 Applied Science and Convergence Technology Vol.2 No.2
SbSI : V, SbSel : V, BiSI : V, BiSeI : V, SbSI : Cr, SbSeI : Cr, BiSI : Cr, SbSI : Ni, SbSeI : Ni, BiSI : Ni, 및 BiSeI : Ni 단결정을 고순도(99.9999%)의 성분원소에 혼합물을 투명석 영관내에 넣고, 1×10^(-6)㎜Hg의 진공에서 봉입하여 합성한 ingot를 사용하여, 수직 Bridgman 방법으로 성장시켰다. 성장된 단결정의 구조는 orthorhombic 구조이며, 광학적 energy band gap 구조는 간접전이형 이였고, energy gap의 온도의존성은 상전이에 관계되는 2개의 변곡점이 나타났으며, 연 속된 영역에서는 Varshni 방정식을 만족하였다. 첨가한 3d 불순물 (V, Cr, Ni)은 모결정의 T_d 대칭을 갖는 주격자점에 +2가 ion으로 위치하며, 이들 ion의 energy 준위간의 전자전이에 의하여 불순물 광흡수 peak 가 나타난다. Single crystals, SbSI : V, SbSel : V, BiSI : V, BiSeI : V, SbSI : Cr, SbSeI: Cr, BiSI : Cr, BiSeI : Cr, SbSI : Ni, SbSeI : Ni, BiSI : Ni, and BiSeI : Ni were grown by the vertical Bridgman method. It is found that the grown single crystals have an orthorhombic structure and the indirect optical transitions. The temperature dependence of energy gap shows the two reflection point related with the phase transitions and is well fitted with Varshni equation in the continuous region. The optical absorption peaks due to the doped impurities (V, Cr, and Ni) are respectively attributed to the electron transitions between the split energy levels of V^(2+), Cr^(2+) and Ni^(2+) ions sited at T_d symmetry of the host lattice.
현승철,오석균,윤상현,김화택,김형곤,최성휴,김창대,윤창선,권숙일,Hyun, Seung-Cheol,Oh, Seok-Kyun,Yun, Sang-Hyun,Kim, Wha-Tek,Kim, Hyung-Gon,Choe, Sung-Hyu,Kim, Chang-Dae,Yoon, Chang-Sun,Kwun, Sook-Il 한국진공학회 1993 Applied Science and Convergence Technology Vol.2 No.2
$SbS_{1-x}Se_xI,\;BiS_{1-x}Se_xI,\;Sb_{1-x}Bi_xSI,\;Sb_{1-x}Bi_xSeI,\;SbS_{1-x}Se_xI:Co,\;BiS_{1-x}Se_xI:Co,\;Sb_{1-x}Bi_xSI:Co$, and $Sb_{1-x}Bi_xSeI:Co$ single crystals were grown by the vertical Bridgman method using the ingots. It has been found that these single crystals have an orthorhombic structure and indirect optical transition. The composition dependences of energy gaps are given by $E_g(x)=E_g(0)-Ax+Bx^2$. The impurity optical absorption peaks due to cobalt deped with impurity are attributed to the electron transitions between the split energy levels of $Co^{2+}$ and $Co^{3+}$ ions sited at $T_d$symmetry of the host lattice.
$Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}$ 및 $Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}$:$Co^{2+}$ 단결정의 광학적 특성과 열역학 함수 추정
현승철,박현,박광호,오석균,김형곤,김남오,Hyun, Seung-Cheol,Park, Hjung,Park, Kwang-Ho,Oh, Seok-Kyun,Kim, Hyung-Gon,Kim, Nam-Oh 대한전기학회 2003 전기학회논문지C Vol.52 No.7
$Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}$ and $Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}$:$Co^{2+}$ single crystals were grown by CTR method. The grown single crystals have defect chalcopyrite structure with lattice constant a=5.5966$\AA$, c=10.8042$\AA$ for the pure, a=5.6543$\AA$, c=10.8205$\AA$ for the Co-doped single crystal, respectively. The optical energy band gap was given as indirect band gap. The optical energy band gap was decreased according to add of Co-impurity Temperature dependence of optical energy band gap was fitted well to the Varshni equation. From this relation, we can deduced the entropy, enthalpy and heat capacity. Also, we can observed the Co-impurity optical absorption peaks assigned to the $Co^{2+}$ ion sited at the $T_{d}$ symmetry lattice and we consider that they were attributed to the electron transitions between energy levels of ions.
현승철(Seung-Cheol Hyun),오석균(Seok-Kyun Oh),윤상현(Sang-Hyun Yun),김화택(Wha-Tek Kim),김형곤(Hyung-Gon Kim),최성휴(Sung-Hyu Choe),김창대(Chang-Dae Kim),윤창선(Chang-Sun Yoon),권숙일(Sook-Il Kwun) 한국진공학회(ASCT) 1993 Applied Science and Convergence Technology Vol.2 No.2
SbS_(1-x)Se_xI, BiS_(1-x)Se_xI, Sb_(1-x)Bi_xSI, Sb_(1-x)Bi_xSel, SbS_(1-x)Se_xI : Co, BiS_(1-x)Se_xI : Co, Sb_(1-x)Bi_xSI : Co, 및Sb_(1-x)Bi_xSeI : Co 단결정을 성장시키기 위하여, 투명석영관내에 고순도의 성분원소 혼합물을 넣고 진공봉입하여 iogot를 합성하였다. 합성된 ingot를 사용하여 수직 Bridgman 방법으로 이들 단결정을 성장시켰다. 성장된 단결정의 구조는 orthorhombic 구조이었고, energy band 구조는 간접전이형으로 주어졌으며, 조성 X에 따른 energy gap의 조성의존성은 E_g(x)=E_g(0)-Ax+BX²으로 주어진다. 불순물로 cobalt를 첨가할 때 나타나는 불순물 광흡수 peak는 모결정의 T_d 대칭점을 갖는 격자점에 첨가한 cobalt 가 Co²+, Co³+ ion으로 위치하고, 이들 ion의 energy 준위들 사이의 전자전이에 의해서 나타남을 확인하였다. SbS_(1-x)Se_xI, BiS_(1-x)Se_xI, Sb_(1-x)Bi_xSI, Sb_(1-x)Bi_xSel, SbS_(1-x)Se_xI : Co, BiS_(1-x)Se_xI : Co, Sb_(1-x)Bi_xSI : Co, and Sb_(1-x)Bi_xSeI : Co single crystals were grown by the vertical Bridgman method using the ingots. It has been found that these single crystals have an orthorhombic structure and indirect optical transition. The composition dependences of energy gaps are given by E_g(x)=E_g(0)-Ax+Bx². The impurity optical absorption peaks due to cobalt doped with impurity are attributed to the electron transitions between the split energy levels of Co²+ and Co³+ ions sited at T_d symmetry of the host lattice.
${\alpha}-In_2S_3:Co^{2+}$ 단결정의 광학적 특성에 관한 연구
박광호,현승철,정진,오석균,Park, Kwang-Ho,Hyun, Seung-Cheol,Jeong, Jin,Oh, Seok-Kyun 한국전기전자재료학회 2008 전기전자재료 Vol.21 No.12
The ${\alpha}-In_2S_3:Co^{2+}$ single crystal with a good quality and stabilized property were gained successfully by the CTR(Chemical Transport Reaction)method. XRD analysis showed that the grown single crystals were cubic structure. The optical absorption spectra of ${\alpha}-In_2S_3:Co^{2+}$ single crystal showed impurity absorption peaks due to cobalt impurity. These impurity absorption pesks were assigned to the ligand transition between the split energy levels of $Co^{2+}$ ions sited in $T_d$ symmetry of these semiconductor host lattice.
α-In<sub>2</sub>S<sub>3</sub>:Co<sup>2+</sup> 단결정의 광학적 특성에 관한 연구
박광호,현승철,정진,오석균,Park, Kwang-Ho,Hyun, Seung-Cheol,Jeong, Jin,Oh, Seok-Kyun 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.12
The ${\alpha}-In_2S_3:Co^{2+}$ single crystal with a good quality and stabilized property were gained successfully by the CTR(Chemical Transport Reaction)method. XRD analysis showed that the grown single crystals were cubic structure. The optical absorption spectra of ${\alpha}-In_2S_3:Co^{2+}$ single crystal showed impurity absorption peaks due to cobalt impurity. These impurity absorption pesks were assigned to the ligand transition between the split energy levels of $Co^{2+}$ ions sited in $T_d$ symmetry of these semiconductor host lattice.
고성능 분산 워크플로우를 위한 선형 계획법 기반의 워크플로우 작업 할당 방법
손진현(Jin Hyun Son),오석균(Seok Kyun Oh),이윤준(Yoon Joon Lee),김명호(Myoung Ho Kim) 한국정보과학회 2000 정보과학회논문지 : 데이타베이스 Vol.27 No.3
워크플로우는 서로 관련성을 가지는 여러 개의 작업들로 구성되며, 각 작업은 호스트에 위치 하면서 분산 공유 자원들을 활용하여 자신의 역할을 수행한다. 만약 분산 워크플로우 시스템에서 가능한 한 관련 구성 요소들을 가까이에 위치시킬 수 있다면, 구성 요소들 사이의 원격 호출을 줄일 수 있으므로 워크플로우의 처리 성능을 향상시킬 수 있다. 이를 위해 본 논문에서는 워크플로우 작업들을 효율적으로 할당해야 하는 필요성에 대해서 언급하고 분산 워크플로우의 작업 할당 문제를 정의한다. 분산 워크플로우의 작업 할당 문제는 워크플로우 작업들이 접근하는 공유 자원들에 대한 정보, 워크플로우에서 정의되는 작업들 사이의 연결 정보, 그리고 호스트들의 용량 정보를 활용하여 구성 요소들 사이의 원격 접근 및 원격 호출을 최소화하도록 워크플로우 작업들을 호스트들에게 적절히 할당하는 것이다. 그리고 이 문제는 NP Complete이므로 본 논문에서는 정수 선형 계획법을 활용하여 최적의 해를 구하는 방법을 제안한다. 한편, 본 논문에서 제안하는 방법은 워크플로우 작업 수가 100개 내외로 구성되는 중/소규모의 워크플로우 시스템에 적용 가능하다. A workflow comprises a set of related tasks, each of which plays its role with the shared resources. Locating interrelated components of the distributed workflow system at the same host can improve the performance of workflow processing by reducing many remote calls. In this regard, we justify the necessity of the efficient workflow task allocation and define the problem in the distributed workflow system. The workflow task allocation problem is to locate workflow tasks into the proper host using the relationship between tasks and shared resources, transition information specified in a workflow type, and each host's processing capacity, which can minimize remote calls among the components. Because the problem is NP complete, we propose a method using Integer Linear Programming for it. The proposed method can be applicable for small- to medium-sized workflows with around 100 workflow tasks.