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밀차형 1차원 영상감지소자를 위한 a-Si:H 다층막의 특성
오상광,김기완,최규만 ( Sang Kwang Oh,Ki Wan Kim,Kyu Man Choi ) 한국센서학회 1992 센서학회지 Vol.1 No.1
We have fabricated a-Si:H multilayer for contact-type linear image sensor by means of RF glow discharge decomposition method. The ITO/i-a-Si:H/Al structure has relatively high dark current due, to indium diffusion and carrier injection from both electrodes, resulting in low photocurrent to dark current. To suppress the dark current and to enhance interface electric field between ITO and i-a-Si:H film we have fabricated ITO/insulator/i-a-S:H/p-a-S:H/Al multilayer film with blocking structure. The photocurrent of ITO/SiO₂(300Å)/i-a-Si:H/p-a-Si:H (1500Å)/Al multilayer sensor with 5V bias voltage became saturated at about 20nA under 20㎼/㎠ light intensity, while the dark current was less than 0.1nA. To increase the light generation efficiency we have adopted ITO/SiO_xN_y,(300Å)/i-a-Si:H/p-a-Si:H(1500Å)/Al structure, showing photocurrent of 30nA and dark current of 0.08nA with 5V bias voltage. Also the spectral photosensitivity of the multilayer was enhanced for short wavelength visible region of 560nm, compared with that of the a-Si:H monolayer of 630nm. And its photoresponse time was about 0.3msec with the film homogeneity of 5% deviation.
비정실 실리콘을 이용한 1차원 영상감지소자의제작 및 특성
오상광,이우일,김기완,최규만 경북대학교 센서기술연구소 1990 센서技術學術大會論文集 Vol.1 No.1
Contact-type linear image sensors have been fabricated by means of rf glow discharge decomposition method of silane and hydrogen mixtures. The dependence of their electrical and optical properties on thickness, rf power, substrate temperature, ambient gas pressure and H_(2)/SiH_(4) ratio are described. The ITO/i-a-Si:H/Al structure film demonstrated photosensitivity of 0.85 and I_(ph)/I_(d) ratio of 150 with 5 V bias voltage under 200 μW/cm^(2) light intensity. In order to investigate photocarrier transport mechanism and obtain fir product we have measured I-V characteristics depending on light source. The linear image sensor for document reading was operated under reverse bias condition with green light source, resulting in ,μ_(h)τ_(h) product of about 1.6 x 10^(-9) cm^(2)/V.
밀착형 1차원 영상감지소자를 위한 a-Si:H 다층막의 특성
오상광,김기완,최규만,Oh, Sang-Kwang,Kim, Ki-Wan,Choi, Kyu-Man 한국센서학회 1992 센서학회지 Vol.29 No.3
팩시밀리용 1차원 영상감지소자로 사용 가능한 수소화된 비정질 실리콘 다층막을 RF 글로방전 분해법으로 제작하였다. ITO/i-a-Si:H/Al 구조는 양전극으로부터의 캐리어주입과 인듐확산으로 인한 암전류가 상대적으로 크므로 본 논문에서는 이 암전류를 억제하고, ITO/i-a-Si:H의 계면에 임듐확산으로 인한 광전변환특성의 저하를 막기 위하여 $SiO_{2}$ 혹은 $SiO_{x}N_{y}$막이 사이에 끼인 ITO/유전체/i-a-Si:H/p-a-Si:H/Al구조를 제작하였다. 이는 계면의 전장을 증가시켜 양호한 광전변환특성을 얻기 위한 것이다. $SiO_{2}$막의 두께가 $300{\AA}$이고 p-a-Si:H막의 두께가 $1500{\AA}$일 때 암전류는 0.1nA이하로 억제되고 광전류도 5V의 인가전압에서 20nA로 포화되었다. 또한 광이용률을 향상시키기 위해 $SiO_{x}N_{y}$막을 ITO와 함께 이중 반반사약으로 형성시켜 ITO/a-$SiO_{x}N_{y}$/i-a-Si:H/p-a-Si:H/Al구조의 다층막을 제작하였다. 이 때 $SiO_{x}N_{y}$막 및 p-a-Si:H막의 두께는 각각 $300{\AA}$ 및 $1500{\AA}$으로 하였다. 광도 $20{\mu}W/cm^{2}$ 및 인가바이어스 5V하에서 광전류는 30nA, 암전류는 0.08nA로 각각 좋은 특성을 나타내었으며 광전류도 5V게서 포화되었다. 또한 분광감도특성의 결과로부터 단층막의 최대감도를 나타내는 파장은 약 630nm이었으며 다층막의 경우는 약 560nm정도이었다. 제작된 다층막의 균일도는 약 5%의 오차를 가졌으며 광응답시간은 0.3msec였다. We have fabricated a-Si:H multilayer for contact-type linear image sensor by means of RF glow discharge decomposition method. The ITO/i-a-Si:H/Al structure has relatively high dark current due to indium diffusion and carrier injection from both electrodes, resulting in low photocurrent to dark current. To suppress the dark current and to enhance interface electric field between ITO and i-a-Si:H film we have fabricated ITO/insulator/i-a-S:H/p-a-S:H/Al multilayer film with blocking structure. The photocurrent of ITO/$SiO_{2}(300{\AA})$/i-a-Si:H/p-a-Si:H($1500{\AA}$)/Al multilayer sensor with 5V bias voltage became saturated at about 20nA under $20{\mu}W/cm^{2}$ light intensity, while the dark current was less than 0.1nA. To increase the light generation efficiency we have adopted ITO/$SiO_{x}N_{y}(300{\AA})$/i-a-Si:H/p-a-Si:H($1500{\AA}$)/Al structure, showing photocurrent of 30nA and dark current of 0.08nA with 5V bias voltage. Also the spectral photosensitivity of the multilayer was enhanced for short wavelength visible region of 560nm, compared with that of the a-Si:H monolayer of 630nm. And its photoresponse time was about 0.3msec with the film homogeneity of 5% deviation.
불소가 첨가된 실리콘 산화막의 다층금속절연 특성에 관한 연구
權大赫,南基泓,吳相光 慶一大學校 1997 論文集 Vol.14 No.2
The characteristics of fluorinated silicon oxide (SiOF) films prepared by plasma enhanced chemical vapor deposition(PECVD) were discussed. The deposition of these films was carried out in the temperature range of 80 - 220℃ in a conventional parallel plate plasma reactor with 〈 ±3% uniformity by flowing 2 sccm of disilane (Si₂H6), 100 sccm of nitrous oxide (N₂O), and 20 sccm of tetrafluoromethane (CF₄). AS the deposition temperature increased from 80 to 220℃, the deposition rate of the films increased from 16.7 to 18.4 nm/min; meanwhile, the etch rate decreased from 2.69 to 1.48 nm/sec. The refractive index was 1.46 regardless of the deposition temperature. The Fourier transform infrared (FTIR) spectra of the films showed decreasing Si-O stretching wave number with increasing full width at half maximum (FWHM) as deposition temperature increased. The high frequency capacitance-voltage (C-V) measurements of the metal-oxide-semiconductor (MOS) capacitors fabricated using the films showed increasing effective oxide charge density and decreasing dielectric constant with increasing deposition temperature. Deposition temperature of 180℃ resulted in films with the smallest dielectric constant of 3.75. These films showed an average breakdown strength of 9.14 MV/cm with 77.5% of the MOS capacitors having breakdown field strength ≥9.5 MV/cm