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기판 세정특성에 따른 표면 패시배이션 및 a-Si:H/c-Si 이종접합 태양전지 특성변화 분석
송준용,정대영,김찬석,박상현,조준식,송진수,왕진석,이정철,Song, Jun-Yong,Jeong, Dae-Young,Kim, Chan-Seok,Park, Sang-Hyun,Cho, Jun-Sik,Song, Jin-Soo,Wang, Jin-Suk,Lee, Jeong-Chul 한국재료학회 2010 한국재료학회지 Vol.20 No.4
This paper investigates the dependence of a-Si:H/c-Si passivation and heterojunction solar cell performances on various cleaning processes of silicon wafers. It is observed that the passivation quality of a-Si:H thin-films on c-Si wafers depends highly on the initial H-termination properties of the wafer surface. The effective minority carrier lifetime (MCLT) of highly H-terminated wafer is beneficial for obtaining high quality passivation of a-Si:H/c-Si. The wafers passivated by p(n)-doped a-Si:H layers have low MCLT regardless of the initial H-termination quality. On the other hand, the MCLT of wafers incorporating intrinsic (i) a-Si:H as a passivation layer shows sensitive variation with initial cleaning and H-termination schemes. By applying the improved cleaning processes, we can obtain an MCLT of $100{\mu}sec$ after H-termination and above $600{\mu}sec$ after i a-Si:H thin film deposition. By adapting improved cleaning processes and by improving passivation and doped layers, we can fabricate a-Si:H/c-Si heterojunction solar cells with an active area conversion efficiency of 18.42%, which cells have an open circuit voltage of 0.670V, short circuit current of $37.31\;mA/cm^2$ and fill factor of 0.7374. These cells show more than 20% pseudo efficiency measured by Suns-$V_{oc}$ with an elimination of series resistance.
50 ㎛ 기판을 이용한 a-Si:H/c-Si 이종접합 태양전지 제조 및 특성 분석
송준용,최장훈,정대영,송희은,김동환,이정철,Song, Jun Yong,Choi, Jang Hoon,Jeong, Dae Young,Song, Hee-Eun,Kim, Donghwan,Lee, Jeong Chul 한국재료학회 2013 한국재료학회지 Vol.23 No.1
In this study, the influence on the surface passivation properties of crystalline silicon according to silicon wafer thickness, and the correlation with a-Si:H/c-Si heterojunction solar cell performances were investigated. The wafers passivated by p(n)-doped a-Si:H layers show poor passivation properties because of the doping elements, such as boron(B) and phosphorous(P), which result in a low minority carrier lifetime (MCLT). A decrease in open circuit voltage ($V_{oc}$) was observed when the wafer thickness was thinned from $170{\mu}m$ to $50{\mu}m$. On the other hand, wafers incorporating intrinsic (i) a-Si:H as a passivation layer showed high quality passivation of a-Si:H/c-Si. The implied $V_{oc}$ of the ITO/p a-Si:H/i a-Si:H/n c-Si wafer/i a-Si:H/n a-Si:H/ITO stacked layers was 0.715 V for $50{\mu}m$ c-Si substrate, and 0.704 V for $170{\mu}m$ c-Si. The $V_{oc}$ in the heterojunction solar cells increased with decreases in the substrate thickness. The high quality passivation property on the c-Si led to an increasing of $V_{oc}$ in the thinner wafer. Short circuit current decreased as the substrate became thinner because of the low optical absorption for long wavelength light. In this paper, we show that high quality passivation of c-Si plays a role in heterojunction solar cells and is important in the development of thinner wafer technology.
송준용(Song, JunYong),정대영(Jeong, Daeyoung),김찬석(Kim, Chan Seok),박상현(Park, Sang Hyun),조준식(Cho, Jun-Sik),윤경훈(Yun, Kyounghun),송진수(Song, Jinsoo),이정철(Lee, JeongChul) 한국신재생에너지학회 2010 한국신재생에너지학회 학술대회논문집 Vol.2010 No.06
This paper investigates the dependence of a-Si:H/c-Si passivation and heterojunction solar cell performances on various cleaning processes of silicon wafer and surface morphology. It is observed that passivation quality of a-Si:H thin-films on c-Si wafer highly depends on wafer surface conditions. The MCLT(Minority carrier life time) of wafer incorporating intrinsic (i) a-Si:H as a passivation layer shows sensitive variation with cleaning process and surface morpholgy. By applying improved cleaning processes and surface morphology we can obtain the MCLT of 200{mu}sec after H-termination and above 1.5msec after i a-Si:H thin film deposition, which has implied open circuit voltage of 0.720V.
댐퍼 스프링의 동적 히스테리시스 저감이 터빈 진동 개선에 미치는 영향에 관한 연구
송준용(Junyong Song),이진수(Jinsoo Lee),홍순석(Soonseok Hong) 한국자동차공학회 2016 한국자동차공학회 학술대회 및 전시회 Vol.2016 No.11
In this thesis, we explain developing processes for torsional damper of torque converter to improve turbine oscillation at passenger car. Turbine oscillation is one of the major NVH issues of the vehicle because it is directly connected to the durability and ride comfort. So, we propose a way to solve this problem by reducing the hysteresis torque of damper spring. And also, predicts vibration transmissibility of the improved design using simulation analysis.
송준용(Junyong Song),홍순석(Soonseok Hong) 대한기계학회 2015 대한기계학회 춘추학술대회 Vol.2015 No.11
Hydrodynamic retarder is one of the important auxiliary braking systems among heavy vehicle. The braking torque depends on the oil filling and the number of revolution of the brake rotor. Using the retarder, there are advantages that can significantly reduce the wear of the brake pads and tires. However, it transmits undesired power which can lead to an undesired power loss in the drive train in non-braking mode. In order to reduce energy losses and thus reduce the vehicle’s fuel consumption, we explain developing processes of the retarder with clutch devices. It is disengaged from the gearbox or the propeller shaft when the retarder is deactivated and does not have to brake the vehicle. And we also predict the fuel consumption of the heavy vehicle according to the mounting retarder clutch using Simulation analysis.
지게차 주행성능과 토크컨버터 유체성능 매칭에 관한 연구
송준용(Junyong Song),권기현(Kihyun Kwon),홍순석(Soonseok Hong) 대한기계학회 2014 대한기계학회 춘추학술대회 Vol.2014 No.4
In this thesis, we explain developing processes for hydrodynamic performance of torque converter to achieve the objective of forklift driving performance. Forklift is one of the dangerous machines which causes the fatal accidents most frequently. For safety, the creep speed of the forklift needs to be lowered. So, we predict the driving performance of the forklift according to the torque converter performance using Simulation analysis. Finally, we present the torque converter performance patterns to achieve the target performance.