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Effect of Soft-annealing on the Properties of CIGSe Thin Films Prepared from Solution Precursors
성시준,Mi Sun Park,김대환,Jin-Kyu Kang 대한화학회 2013 Bulletin of the Korean Chemical Society Vol.34 No.5
Solution-based deposition of CuInxGa1-xSe2 (CIGSe) thin films is well known non-vacuum process for the fabrication of CIGSe solar cells. However, due to the usage of organic chemicals in the preparation of CIG precursor solutions, the crystallization of the polycrystalline CIGSe and the performance of CIGSe thin film solar cells were significantly affected by the carbon residues from the organic chemicals. In this work, we have tried to eliminate the carbon residues in the CIG precursor thin films efficiently by using soft-annealing process. By adjusting soft-annealing temperature, it is possible to control the amount of carbon residues in CIG precursor thin films. The reduction of the carbon residues in CIG precursors by high temperature soft-annealing improves the grain size and morphology of polycrystalline CIGSe thin films, which are also closely related with the electrical properties of CIGSe thin film solar cells.
성시준,길은경,이상주,최용찬,양기정,강진규,조국영,김대환 한국공업화학회 2017 Journal of Industrial and Engineering Chemistry Vol.56 No.-
Herein, we report on the systematic engineering of the interface between the titanium oxide (TiO2)photoelectrode and the antimony sulfide (Sb2S3) absorber layer in planar Sb2S3 solar cells, which wasmuch unexplored, on the photovoltaic performance. Due to simple spin-coating process for thepreparation of TiO2 and Sb2S3 layers, it was possible to vary the interfacial conditions between the TiO2photoelectrode and the Sb2S3 absorber layer easily. Unlike conventional solar cells using mesoporousTiO2 electrode, it was newly found that uniform and intimate contact between TiO2 and Sb2S3 layersaffects not only efficiency but also reproducibility of planar Sb2S3 solar cells. Our results clearlyemphasize and raise the importance of interfacial engineering for the planar heterojunction solar cells.