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압전박막을 이용한 감압전장효과 트랜지스터 ( PSFET ) 의 동작특성
남기홍 ( Ki Hong Nam ),손병기 ( Byung Ki Sohn ),조병욱 ( Byung Woog Cho ),양규석 ( Gyu Suk Yang ),군대혁 ( Dae hyuk Kwon ) 한국센서학회 1995 센서학회지 Vol.4 No.2
A new FET type semiconductor pressure sensor (FSFET : pressure sensitive field effect transistors was fabricated and its operational characteristics were investigated. A ZnO thin film as a piezoelectric layer, 5000Å thick, was deposited on a gate oxide of FET by RF magnetron sputtering. he deposition conditions to obtain a axis poling structure were substrate temperature of power of 140watt, and working pressure of 5mtorr in Ar ambience. The fabricated PSFET den-ice showed good linearity and stability in the applied pressure range(1x10^5 Pa∼4x10^5 Pa)