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박범영,김호윤,김구연,정해도,Park, Boumyoung,Kim, Hoyoun,Kim, Gooyoun,Jeong, Haedo 한국기계가공학회 2003 한국기계가공학회지 Vol.2 No.4
Chemical mechanical polishing(CMP) has been applied for planarization of topography after patterning process in semiconductor fabrication process. Tungsten CMP is necessary to build up interconnects of semiconductor device. But the tungsten dishing and the oxide erosion defects appear at end-point during tungsten CMP. It has been known that the generation of dishing and erosion is based on the over-polishing time, which is determined by pattern selectivity. Fixed abrasive pad takes advantage of decreasing the defects resulting flam reducing pattern selectivity because of the lower abrasive concentration. The manufacturing technique of fixed abrasive pad using hydrophilic polymers is introduced in this paper. For application to tungsten CMP, chemicals composed of oxidizer, catalyst, and acid were developed. In comparison of the general pad and slurry for tungsten CMP, the fixed abrasive pad and the chemicals resulted in appropriate performance in point of removal rate, uniformity, material selectivity and roughness.
Self-Conditioning을 이용한 고정입자패드의 텅스텐 CMP
박범영(Boumyoung Park),김호윤(Hoyoun Kim),서헌덕(Heondeok Seo),정해도(Haedo Jeong) 대한기계학회 2003 대한기계학회 춘추학술대회 Vol.2003 No.4
The chemical mechanical polishing(CMP) is necessarily applied to manufacturing the dielectric layer<br/> and metal line in the semiconductor device. The conditioning of polishing pad in CMP process<br/> additionally operates for maintaining the removal rate, within wafer non-uniformity, and wafer to wafer<br/> non-uniformity. But the fixed abrasive pad(FAP) using the hydrophilic polymer with abrasive that has<br/> the swelling characteristic by water owns the self-conditioning advantage as compared with the general<br/> CMP. FAP also takes advantage of planarity, resulting from decreasing pattern selectivity and defects<br/> such as dishing due to the reduction of abrasive concentration. This paper introduces the manufacturing<br/> technique of FAP. And the tungsten CMP using FAP achieved the good conclusion in point of the<br/> removal rate, non-uniformity, surface roughness, material selectivity, micro-scratch free contemporary<br/> with the pad life-time.
Self-conditioning 고정입자패드를 이용한 CMP
박범영,이현섭,박기현,서헌덕,정해도,김호윤,김형재,Park, Boumyoung,Lee, Hyunseop,Park, Kihyun,Seo, Heondeok,Jeong, Haedo,Kim, Hoyoun,Kim, Hyoungjae 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.4
Chemical mechanical polishing(CMP) process is essential technology to be applied to manufacturing the dielectric layer and metal line in semiconductor devices. It has been known that overpolishing in CMP depends on pattern selectivity as a function of density and pitch, and use of fixed abrasive pad(FAP) is one method which can improve the pattern selectivity. Thus, dishing & erosion defects can be reduced. This paper introduces the manufacturing technique of FAP using hydrophilic polymers with swelling characteristic in water and explains the self-conditioning phenomenon. When applied to tungsten blanket wafers, the FAP resulted in appropriate performance in point of uniformity, material selectivity and roughness. Especially, reduced dishing and erosion was observed in CMP of tungsten pattern wafer with the proposed FAP.
박범영,이현섭,박기현,정석훈,서헌덕,정해도,김호윤,김형재,Park, Boumyoung,Lee, Hyunseop,Park, Kiyhun,Jeong, Sukhoon,Seo, Heondeok,Jeong, Haedo,Kim, Hoyoun,Kim, Hyoungjae 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.9
Chemical mechanical polishing(CMP) has become the process of choice for modem semiconductor devices to achieve both local and global planarization. CMP is a complex process which depends on numerous variables such as macro, micro and nano-geometry of pad, relative velocity between pad and wafer stiffness and dampening characteristics of pad, slurry, pH, chemical components of slurry, abrasive concentration, abrasive size, abrasive shape, etc. Especially, an oxidizer of chemical components is very important remove a target material in metal CMP process. This paper introduces the effect of oxidizer such as $H_2O_2,\;Fe(NO_3)_3\;and\;KIO_3$ in slurry for tungsten which is used in via or/and plug. Finally the duplex reacting mechanism of $oxidizer(H_2O_2)$ through adding the $catalyst(Fe(NO_3)_3)$ could acquire the sufficient removal rate in tungsten CMP.