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김영석,김준곤,홍완,김덕경,조수영,우형주,김낙배,Kim, Y. S.,Kim, J. M.,Hong, W.,Kim, D. K.,Cho, S. Y.,Woo, H. J.,Kim, N. B. 한국진공학회 1993 Applied Science and Convergence Technology Vol.2 No.4
Hydrogen depth profiling was performed by H(19F, $\alpha$${\gamma}$) nuclear resonance reactin . A cesium sputtering ion sorce and 1.7MV Tandem Van de Graaff accelerator was used for the production of 6.5MeV 19F ion. The ${\gamma}$ rays produced by the reaction were measure dby 3" $\times$3" and 6" $\times$8" Nal detectors . A test measurement was done for hydrogen contaminatin layer of a bare silicon wafer, Si3N4(H) and Zr(O)a-Si/Si for the purpose of verifying the applicability , detection limit and the reliability of the method.ility of the method.
An ERD-TOF System for the Depth Profiling of Light Elements
김영석,우형주,김준곤,김덕경,최한우,홍완,Kim, Y. S.,Woo, H. J.,Kim, J. K.,Kim, D. K.,Choi, H. W.,Hong, W. The Korean Vacuum Society 1996 Applied Science and Convergence Technology Vol.5 No.1
An ERD-TOF system is constructed for the nondestructive depth profiling of light elements in thin films in the range of several thousand angstroms. The particles, recoiled by 10 $MeV^{35}Cl$ projectiles, were detected by a Time-Of-Flight spectrometer composed of a MCP (Micro Channel Plate) and a SSB (Silicon Surface Barrier) detector. A two parameter data acquisition system composed of two PC's was constructed for registering simultaneous time and energy signals. A $Si_3N_4$/poly-Si/$SiO_2$/Si sample was anlayzed and the result is compared with RBS. The detection limit, maximum probable depth and depth resolution for light elements in silicon are about $4\times10^{14}atoms/\textrm{cm}^2$, 5, 000$\AA$ and 100$\AA$, respectively.