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ZnO 나노와이어를 이용한 FET 소자 제작 및 특성 평가
김경원(K.W. Kim),오원석(W.S. Oh),장건익(G.E. Jang),박동원(D.W. Park),이정오(J.O. Lee),김범수(B.S. Kim) 한국표면공학회 2008 한국표면공학회지 Vol.41 No.1
The zinc oxide(ZnO) nanowires were deposited on Si(001) substrates by thermal chemical vapour deposition without any catalysts. SEM data suggested that the grown nanostructures were the well-aligned ZnO single crystals with preferential orientation. Back-gate ZnO nanowire field effect transistors(FET) were successfully fabricated using a photolithography process. The fabricated nanowire FET exhibits good contact between the ZnO nonowire and Au metal electrodes. Based on I-V characteristics it was found out that the ZnO nonowire revealed a characteristic of n-type field effect transistor. The drain current increases with increasing drain voltage, and the slopes of the Ids-Vds curves are dependent on the gate voltage.