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길태현(Tae Hyun Gil),이왕헌(Wang Heon Lee),안종화(Johng-Hwa Ahn) 대한환경공학회 2020 대한환경공학회지 Vol.42 No.1
목적 : 본 연구에서는 메탄올 처리로 기름을 제거한 호박 씨앗의 찌꺼기를 이용하여 수용액으로부터 메틸렌 블루제거를 위한 흡착제의 가능성을 평가하기 위하여 실험을 진행하였다. 방법 : 호박 씨앗 찌꺼기 흡착제의 용량(7.5-25 g/L), 초기 메틸렌 블루의 농도(25-200 mg/L), 흡착 시간(30-120분), pH (3-11), 온도(293-333 K) 등에 따른 흡착실험을 진행하였다. 등온흡착식은 Langmuir, Freundlich 및 Temkin 흡착식을 이용하였고, 동력학적 반응식은 유사 1차 및 2차 반응 속도식을 적용하여 흡착능력을 평가하였다. 결과 및 토의 : 흡착능력은 메틸렌 블루의 초기농도가 저농도(25-50 mg/L)일 때는 30분 이전에 평형에 도달했으며, 고농도(100-200 mg/L)일 때는 90분 이후에 평형에 도달했다. pH와 온도가 증가할수록 흡착량이 증가하였다. Gibbs 자유에너지(-15.78에서 -13.87 kJ/mol)와 엔탈피(0.011 kJ/mol) 값을 통해 흡착이 자발적이고 흡열반응임을 알 수 있었다. 흡착등온식을 적용하였을 때 Freundlich식에 더 적합하였고, Langmuir식의 이론적 최대흡착량(Q0)은 20.33 mg/g이었다. Temkin 등온흡착식의 흡착열에 대한 상수가 6.28 J/mol로 나타났다. 반응속도는 유사 2차 반응속도식을 따르며, 속도 상수는 0.002-0.278 g/mg·min이었다. 결론 : 본 연구를 통해 메탄올 처리로 기름을 제거한 호박 씨앗의 찌꺼기가 수용액으로부터 메틸렌 블루 제거를 위해 성공적으로 사용될 수 있음을 나타내었다. 따라서 기름을 제거한 호박 씨앗 찌꺼기는 염료제거를 위한 바이오 흡착제로 우수한 잠재력이 있는 것으로 확인되었다. Objective : Present research discussed the utilization of pumpkin-seed residue (PSR) after oil extraction with methanol as an adsorbent for methylene blue (MB) removal from aqueous solution. Method : The experiment was carried out to evaluate the influence of PSR adsorbent dose (7.5-25 g/L), initial MB concentration (25-200 mg/L), contact time (30-120 min), pH (3-11), and temperature (293-333 K). Adsorption isotherms were modeled with the Langmuir, Freundlich, and Temkin isotherms. The kinetic data were analyzed using pseudo-first-order and pseudo-second-order models. Results and Discussion : A pseudo-equilibrium state was reached within 30 min of contact time at low initial MB concentration (25-50 mg/L) and 90 min at high concentration (100-200 mg/L). Increasing pH and temperature caused an increase in adsorption capacity. Thermodynamic studies demonstrated that the adsorption process was spontaneous with Gibb’s free-energy values ranging between -15.78 to -13.87 kJ/mol and endothermic with an enthalpy value of 0.011 kJ/mol. The adsorption equilibrium data fitted well with the Freundlich adsorption isotherm. The maximum monolayer adsorption capacity was 20.33 mg/g. Tempkin isotherm model clarified that the heat of sorption process was 6.28 J/mol. The adsorption kinetics was found to follow the pseudo-second order kinetics model and its rate constant was 0.002-0.278 g/mg · min. Conclusions : Findings of the present study indicated that the PSR can be successfully used for removal of MB from aqueous solution. Therefore, the PSR was shown to have good potential as a biosorbent for MB removal.
김동진,길태현,김용상 明知大學校 産業技術硏究所 1999 産業技術硏究所論文集 Vol.18 No.-
SiC thin film have been prepared by ICP-CVD for low temperature deposition and large area deposition. The structural properties of deposited SiC films are characterized by employing SEM, FR-IR, XRD, XPS and Raman Spectroscopy. From the experimetal results, good crystallinity has been achieved in 1000℃ grown SiC film which have carbonization step at 1100℃ for substrate bias of 30V.
저온 중수소 어닐링을 활용한 Enclosed-Layout Transistors (ELTs) 소자의 제작 및 전기적 특성분석
왕동현 ( Dong-hyun Wang ),김동호 ( Dong-ho Kim ),길태현 ( Tae-hyun Kil ),연지영 ( Ji-yeong Yeon ),김용식 ( Yong-sik Kim ),박준영 ( Jun-young Park ) 한국전기전자재료학회 2024 전기전자재료학회논문지 Vol.37 No.1
The size of semiconductor devices has been scaled down to improve packing density and output performance. However, there is uncontrollable spreading of the dopants that comprise the well, punch-stop, and channel-stop when using hightemperature annealing processes, such as rapid thermal annealing (RTA). In this context, low-temperature deuterium annealing (LTDA) performed at a low temperature of 300℃ is proposed to reduce the thermal budget during CMOS fabrication. The LTDA effectively eliminates the interface trap in the gate dielectric layer, thereby improving the electrical characteristics of devices, such as threshold voltage (VTH), subthreshold swing (SS), on-state current (ION), and off-state current (IOFF). Moreover, the LTDA is perfectly compatible with CMOS processes.
고압 중수소 어닐링을 통한 SiO<sub>2</sub> 절연체의 균일성 개선
김용식 ( Yong-sik Kim ),정대한 ( Dae-han Jung ),박효준 ( Hyo-jun Park ),연주원 ( Ju-won Yeon ),길태현 ( Tae-hyun Kil ),박준영 ( Jun-young Park ) 한국전기전자재료학회 2024 전기전자재료학회논문지 Vol.37 No.2
As complementary metal-oxide semiconductor (CMOS) is scaled down to achieve higher chip density, thin-film layers have been deposited iteratively. The poor film uniformity resulting from deposition or chemical mechanical planarization (CMP) significantly affects chip yield. Therefore, the development of novel fabrication processes to enhance film uniformity is required. In this context, high-pressure deuterium annealing (HPDA) is proposed to reduce the surface roughness resulting from the CMP. The HPDA is carried out in a diluted deuterium atmosphere to achieve cost-effectiveness while maintaining high pressure. To confirm the effectiveness of HPDA, time-of-flight secondary-ion mass spectrometry (ToF-SIMS) and atomic force microscopy (AFM) are employed. It is confirmed that the absorbed deuterium gas facilitates the diffusion of silicon atoms, thereby reducing surface roughness.