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윤호경,문석환,고상춘,황건,최태구,Yun, Ho-Gyeong,Moon, Seok-Hwan,Ko, Sang-Choon,Hwang, Gunn,Choy, Tae-Goo 대한기계학회 2002 大韓機械學會論文集B Vol.26 No.9
In this study, to make an excellent heat pipe, the manufacturing technology of a sintered wick was investigated. Making a sintered wick is known to be very difficult but it has many advantages. For example, the porosity and pore size can be controlled and the capillary force is great. The mixture of copper and pore former powder was used as a wick material and ceramic-coated stainless steel was used as a mandrel which is necessary for vapor flow. To analyze the feature of the manufactured wick, not only porosity and pore size were measured but also the sintered structure was observed. A heat pipe with sintered wick was manufactured and the performance test of the heat pipe was performed in order to review cooling performance. The performance test results for the 4mm diameter heat pipe with the sintered wick shows the stability since the temperature difference between a evaporator and a condenser of the heat pipe is less than 4.4$^{\circ}C$, and thermal resistance is less than 0.7$^{\circ}C$/W, In the meantime the composite wick that is composed with sintered and woven wire was also examined. The heat transfer limit of the heat pipe with composite wick was enhanced about 51%~60% compare to the one with sintered wick.
몰리브데넘 기반의 오믹 저항을 이용한 AlGaN/GaN 쇼키 다이오드 특성
김진식(Zin-Sig Kim),이형석(Hyung-Seok Lee),나제호(Jeho Na),고상춘(Sang-Choon Ko),남은수(Eunsoo Nam),임종원(Jong-Won Lim) 대한전자공학회 2016 대한전자공학회 학술대회 Vol.2016 No.6
Schottky barrier diodes (SBDs) on AlGaN/GaN heterostructure are one of promising alternatives for high power switching device, because of their high switching speed, low on-resistance and large breakdown voltage. Lots of investigations are performed for the application of AlGaN/GaN SBD for rectifiers or devices in DC-DC converters and inverters. In this work, we investigated the optimal conditions of Mo-based ohmic contact for fabrication of AlGaN/GaN SBD devices, and characterized the fabricated AlGaN/GaN SBD devices using optimized ohmic condition with Mo-based ohmic metal..