http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
CVD 다이아몬드 기판에 형성된 AlGaN/GaN 이종 구조위의 쇼키 다이오드의 열 특성
김진식(Zin-Sig Kim),이형석(Hyung-Seok Lee),배성범(Sung-Bum Bae),남은수(Eunsoo Nam),임종원(Jong-Won Lim) 대한전자공학회 2018 대한전자공학회 학술대회 Vol.2018 No.6
High electron mobility transistors (HEMTs) and Schottky barrier diodes (SBDs) based on AlGaN/GaN heterostructures are well studied for application for high-frequency and/or high-power area. Widely distributed substrates for the high performance of RF applications are presently AlGaN/GaN on SiC and AlGaN/GaN on Si for high power performance. Because the thermal conductivity of CVD diamond substrate is high as 12 W/cm∙K, devices of AlGaN/GaN on CVD diamond are one of the excellent alternatives for power and RF applications, where the thermal conductivity of AlGaN/GaN on SiC is 4.9 W/cm∙K, and that of AlGaN/GaN on Si 1.3 W/cm∙K. In this work, we report the fabrication of SBD devices with 163.8 mm Schottky length. And also we investigated the thermal properties of the fabricated large scale SBD devices.
몰리브데넘 기반의 오믹 저항을 이용한 AlGaN/GaN 쇼키 다이오드 특성
김진식(Zin-Sig Kim),이형석(Hyung-Seok Lee),나제호(Jeho Na),고상춘(Sang-Choon Ko),남은수(Eunsoo Nam),임종원(Jong-Won Lim) 대한전자공학회 2016 대한전자공학회 학술대회 Vol.2016 No.6
Schottky barrier diodes (SBDs) on AlGaN/GaN heterostructure are one of promising alternatives for high power switching device, because of their high switching speed, low on-resistance and large breakdown voltage. Lots of investigations are performed for the application of AlGaN/GaN SBD for rectifiers or devices in DC-DC converters and inverters. In this work, we investigated the optimal conditions of Mo-based ohmic contact for fabrication of AlGaN/GaN SBD devices, and characterized the fabricated AlGaN/GaN SBD devices using optimized ohmic condition with Mo-based ohmic metal..