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      • KCI등재후보

        DACUM법을 이용한 초등학교 방과후학교 강사 직무분석

        박용호 ( Yong Ho Park ),조대연 ( Dae Yeon Cho ),홍순현 ( Soon Hyun Hong ),김벼리 ( Byu Ri Kim ),노유경 ( Yu Kyeong Roh ),왕몽 ( Meng Wang ),정희정 ( Hi Jung Jung ) 한국인력개발학회 2011 HRD연구 Vol.13 No.1

        학교교육과정 이외에 다양하고 창의적인 학습기회를 제공하고, 지역 평생교육의 거점으로서 학교의 역할을 재정립 해온 방과후학교 제도에 대한 관심이 높아지면서 방과후학교 강사의 양성과 질 관리 점검 및 개선의 필요성이 제기되고 있다. 이러한 관점에서 본 연구는 초등학교 방과후학교 강사를 대상으로 그들이 어떤 일(책무 및 과업)을 하고 있는지 파악하는 것을 목적으로 한다. 이와 같은 연구목적을 수행하기 위해, 본 연구는 직무주제전문가들을 대상으로 DACUM 방법을 통해 직무모델을 도출하였고, 도출된 직무모델을 검증하가 위한 설문조사를 실시하였다. DACUM 워크숍을 통해 본 연구는 방과후학교 강사의 7개 책무와 51개 과업을 도출하였다. DACUM 결과를 타당화하기 위한 설문분석을 통해 7개 책무와 50개 과업이 확정되었다. 부가적으로 DACUM 워크숍에서 방과후학교 강사의 직무수행을 위해 필요한 지식, 태도, 장비, 미래의 경향에 대한 의견을 제시하였다. 마지막으로 본 연구는 연구결과를 바탕으로 이론적, 실천적 함의점을 제안하였다. Given the fact that after school system is different from the formal school education system which is not diverse and ingenuine, after school system has been paid much attention since it changed school`s role as the local base for life-long education. Meanwhile, it proposes that after school teachers, who directly manage the after school institution, are necessary to be cultivated and improve their performance. Thus the purpose of this study is to explore what after school teachers do. In order to achieve the purpose of this study, we explore the job model consisting of duty and tasks through DACUM process. Furthermore, based on the job model, we put questionnaire into effect. The questionnaire is used to verify each task. Consequently, the result of job analysis for after school teachers includes 7 duties and 51 tasks. In accordance of the incumbent teachers` confirmation, this study provides information what the teachers actually do. Finally, we suggest both theoretical and practical implications based upon the findings of this study.

      • SCISCIESCOPUS

        InGaZnO transistor based on porous Ag nanowire-functionalized gate electrode for detection of bio-relevant molecules

        Yoo, Tae-Hee,Moon, Hi Gyu,Wang, Byung-Yong,Sang, Byoung-In,Angadi, Basavaraj,Oh, Young-Jei,Choi, Won Kook,Kang, Chong-Yun,Hwang, Do Kyung Elsevier 2018 Sensors and actuators. B Chemical Vol.254 No.-

        <P><B>Abstract</B></P> <P>We report on InGaZnO (IGZO) thin film transistors (TFTs)-based bio-chemical sensors which can detect the chemical/biological species. As novel sensing platform, the IGZO TFT with Ag nanowire (NW) mesh showed pronounced output voltage changes responding to all analytes of H<SUB>2</SUB>O<SUB>2</SUB>, b-<SMALL>D</SMALL>-glucose, <SMALL>D</SMALL>-glucono-1,5-Lactione, and lactic acid, which are reproducible and reversible. Herein, porous Ag NW-functionalized top gate electrode plays a major role in sensing platform for enhanced sensing capability in aqueous medium. Moreover, these top gate geometry serve as a stable backplane for electrical modulation. As a result, analytes solutions become acidic or basic and such pH alterations induce significant turn-on voltage shifts on our devices. For implementation of a resistive load inverter, the output sensing voltage signals can be directly extracted, and such signals are reproducible and reversible. The proposed IGZO TFTs with Ag NW mesh top gate electrode based sensing platform pave the way for development of portable and reusable real-time non-destructive label-free chemical/biological sensors.</P> <P><B>Highlights</B></P> <P> <UL> <LI> New sensing platform of IGZO thin film transistor (TFT) combined with Ag nanowire mesh porous gate electrode has been suggested. </LI> <LI> The IGZO TFTs with Ag NW mesh top gate electrode rapidly respond to chemical/biologically relevant analytes by shifting the turn-on (or threshold) voltage. </LI> <LI> Flexible IGZO TFT and inverter based sensors were demonstrated. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>A new sensing platform using InGaZnO metal oxide thin film transistor (TFTs) and Ag nanowire mesh gate electrode is proposed, which detect biologically relevant species such as H<SUB>2</SUB>O<SUB>2</SUB>, b-<SMALL>D</SMALL>-glucose, <SMALL>D</SMALL>-glucono-1,5-Lactione, and Lactic acid in aqueous media.</P> <P>[DISPLAY OMISSION]</P>

      • KCI등재

        Dynamic analysis for gene expression profiles of endothelial colony forming cells under hypoxia

        De-Cai Yu,Wen-Du Feng,Xian-Biao Shi,hi-Yong Wang,Wei Ge,Chun-Ping Jiang,Xi-Tai Sun,Yi-Tao Ding 한국유전학회 2013 Genes & Genomics Vol.35 No.4

        Previous studies have shown that endothelial colony forming cells (ECFCs) play an important role in the neovascularization of tumors. Hypoxia is emphasized as an important promoter of angiogenesis. However, little is known about genome-wide transcriptional regulation of ECFCs under hypoxic conditions. In this study, gene expression profiles in ECFCswere evaluated under hypoxic conditions for 3, 6, 12, 24,and 48 h, using Affymetrix U133 plus 2.0 chip microarray. 1,103 hypoxia-regulated genes were filtered, with 379(0.693 %) genes up-regulated and 724 (1.32 %) genes downregulated. Most of the up-regulated genes were involved in apoptosis, cell proliferation, or metabolic processes, while most of the down-regulated genes were involved in cell adherence,cell cycle,DNAandmRNAmetabolic processes,multi-cellular organism development, protein metabolic processes, response to stress, signal transduction, or transport. This expression profile is ECFC-specific, because it is significantly different from those of endothelial cells and smooth muscle cells under hypoxic conditions. Moreover, hypoxia-regulated apoptosis in ECFCs is mainly related with the mitochondrial pathway (p53-BAX-Caspase-9) and the death receptor pathway (FASCaspase-8-Caspase-3). MAPK pathway is activated in ECFCs under hypoxic conditions. The differentially expressed genes of ECFCs were identified under hypoxic conditions, and related with cell apoptosis, cell cycle and MAPK pathways, shedding light on the mechanism of angiogenesis.

      • KCI등재

        Nano-scale CMOS를 위한 Ni-germano Silicide의 열 안정성 연구

        황빈봉,오순영,윤장근,김용진,지희환,김용구,왕진석,이희덕,Huang, Bin-Feng,Oh, Soon-Young,Yun, Jang-Gn,Kim, Yong-Jin,Ji, Hee-Hwan,Kim, Yong-Goo,Wang, Jin-Suk,Lee, Hi-Deok 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.11

        In this paper, novel methods for improvement of thermal stability of Ni-germano Silicide were proposed for nano CMOS applications. It was shown that there happened agglomeration and abnormal oxidation in case of Ni-germano Silicide using Ni only structure. Therefore, 4 kinds of tri-layer structure, such as, Ti/Ni/TiN, Ni/Ti/TiN, Co/Ni/TiN and Ni/Co/TiN were proposed utilizing Co and Ti interlayer to improve thermal stability of Ni-germano Silicide. Ti/Ni/TiN structure showed the best improvement of thermal stability and suppression of abnormal oxidation although all kinds of structures showed improvement of sheet resistance. That is, Ti/Ni/TiN structure showed only 11 ohm/sq. in spite of 600 $^{\circ}C$, 30 min post silicidation annealing while Ni-only structure show 42 ohm/sq. Therefore, Ti/Ni/TiN structure is highly promising for nano-scale CMOS technology.

      • Time-Dependent Dielectric Breakdown of <tex> $\hbox{La}_{2} \hbox{O}_{3}$</tex>-Doped High-<tex> $k$</tex>/Metal Gate Stacked NMOSFETs

        In-Shik Han,Won-Ho Choi,Hyuk-Min Kwon,Min-Ki Na,Ying-Ying Zhang,Yong-Goo Kim,Jin-Suk Wang,Chang Yong Kang,Bersuker, G.,Byoung Hun Lee,Yoon Ha Jeong,Hi-Deok Lee,Jammy, R. IEEE 2009 IEEE electron device letters Vol.30 No.3

        <P>Time-dependent dielectric breakdown (TDDB) characteristics of La<SUB>2</SUB>O<SUB>3</SUB>-doped high-k dielectric in Hf-based high-k/TaN metal gate stack were studied. Unlike the abrupt breakdown in the conventional SiO<SUB>2</SUB> , dielectric breakdown behaviors of La-incorporated HfON and HfSiON dielectrics show progressive breakdown characteristics. Moreover, the extracted Weibull slope beta of breakdown distribution is in the range of 0.87-1.19, and it is independent on capacitor areas and stress conditions. Moreover, field dependence of T<SUB>BD</SUB> and stress-induced leakage current strongly suggest that the E-model is more applicable to explain in TDDB of La-incorporated high-k dielectric in Hf-based high-k/metal gate stack structure.</P>

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