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Cost-effective Fabrication of Submicron Patterns under Low Pressure over a Large Area
Zin-Sig Kim,Kun-Sik Park,백규하,도이미 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.61 No.7
The cost–effective fabrication of submicron patterns on Si-wafer under low pressure over a large area using an ultraviolet-assisted nano imprint lithography (UV-NIL) technique is reported. In this study it is demonstrated that UV-NIL, using normal mask aligner MA6 under low pressure, was applied to fabricate submicron patterns on the 6 inch sized Si-wafer with the feature size ranging from 350 nm to 2000 nm, the pattern depth of 800 nm and the thickness of the residual layer less than 100 nm with good uniformity and reproducibility over large areas. We also demonstrated the potential to apply the three dimensional (3D) patterned imprint on dual damascene process, which can then be reduced from a normal 14 step process to a 6 step process. Metallization of a 3D-patterned imprinted resist with metal was also demonstrated in this study.
Kim, Zin-Sig,Lee, Hyung-Seok,Na, Jeho,Bae, Sung-Bum,Nam, Eunsoo,Lim, Jong-Won Elsevier 2018 Solid-state electronics Vol.140 No.-
<P><B>Abstract</B></P> <P>Enhancement-mode transistors with uniform turn-on threshold voltage (V<SUB>th</SUB>) can be achieved using low damage and low rate gate recess etching techniques. In this work, dry etching conditions for a AlGaN/GaN heterostructure with an ultra-low etching rate of 1.5 nm/min were demonstrated and we succeeded the possibility to achieve a low etch rate of an AlGaN/GaN heterostructure in a Cl<SUB>2</SUB>/BCl<SUB>3</SUB> plasma using inductively coupled plasma (ICP). The etching development was successfully implemented in the achievement of a normally-off GaN/AlGaN based transistor. The optimal recess depth was determined after fabrication of various devices with different recess depth values and with various dry etching conditions and after examining the performances of fabricated devices various conditions, and determining the dependence of recess time. The optimized etching condition resulted in low damage and smooth morphology of the etched AlGaN/GaN surfaces. Fine control of the depth of the gate region recess was achieved for the AlGaN/GaN heterostructure without any etch-stop layer, and validated for the fabrication of field effect transistors (FETs) using conventional processes. The fabricated normally-off Al<SUB>2</SUB>O<SUB>3</SUB>/AlGaN/GaN MOSFETs delivered a high positive V<SUB>th</SUB> of +5.64 V with a low off-state leakage current of ∼10<SUP>−7</SUP> A/mm and lower current collapse.</P>
몰리브데넘 기반의 오믹 저항을 이용한 AlGaN/GaN 쇼키 다이오드 특성
김진식(Zin-Sig Kim),이형석(Hyung-Seok Lee),나제호(Jeho Na),고상춘(Sang-Choon Ko),남은수(Eunsoo Nam),임종원(Jong-Won Lim) 대한전자공학회 2016 대한전자공학회 학술대회 Vol.2016 No.6
Schottky barrier diodes (SBDs) on AlGaN/GaN heterostructure are one of promising alternatives for high power switching device, because of their high switching speed, low on-resistance and large breakdown voltage. Lots of investigations are performed for the application of AlGaN/GaN SBD for rectifiers or devices in DC-DC converters and inverters. In this work, we investigated the optimal conditions of Mo-based ohmic contact for fabrication of AlGaN/GaN SBD devices, and characterized the fabricated AlGaN/GaN SBD devices using optimized ohmic condition with Mo-based ohmic metal..
CVD 다이아몬드 기판에 형성된 AlGaN/GaN 이종 구조위의 쇼키 다이오드의 열 특성
김진식(Zin-Sig Kim),이형석(Hyung-Seok Lee),배성범(Sung-Bum Bae),남은수(Eunsoo Nam),임종원(Jong-Won Lim) 대한전자공학회 2018 대한전자공학회 학술대회 Vol.2018 No.6
High electron mobility transistors (HEMTs) and Schottky barrier diodes (SBDs) based on AlGaN/GaN heterostructures are well studied for application for high-frequency and/or high-power area. Widely distributed substrates for the high performance of RF applications are presently AlGaN/GaN on SiC and AlGaN/GaN on Si for high power performance. Because the thermal conductivity of CVD diamond substrate is high as 12 W/cm∙K, devices of AlGaN/GaN on CVD diamond are one of the excellent alternatives for power and RF applications, where the thermal conductivity of AlGaN/GaN on SiC is 4.9 W/cm∙K, and that of AlGaN/GaN on Si 1.3 W/cm∙K. In this work, we report the fabrication of SBD devices with 163.8 mm Schottky length. And also we investigated the thermal properties of the fabricated large scale SBD devices.
AlGaN/GaN 이종접합 구조의 게이트 영역 미세 조절 리세스를 이용한 상시불통형 전계효과 트랜지스터
김진식(Zin-Sig Kim),이형석(Hyung-Seok Lee),배성범(Sung-Bum Bae),안호균(Hokyun Ahn),이상흥(Sang-Heung Lee),임종원(Jong-Won Lim),강동민(Dong Min Kang) 대한전자공학회 2019 대한전자공학회 학술대회 Vol.2019 No.11
In this work, we fabricated normally-off FETs using gate recess techniques with extremely low rate dry etching conditions. We report also, a relationship between the Vth-shift and the recess depth under the gate area of FETs on AlGaN/GaN heterostructure. We confirmed also extremely low etching rate of 0.025 nm/s or 1.5 nm/min using Cl₂-based inductively coupled plasma etching process. Devices with different recess depths were fabricated, and determined the dependence of recess depth on Vth-shift. Without any etching-stop layers, it was achieved well targeted and good controlled recess depth under the gate region. With the extremely low rated dry etching conditions, we fabricated normally-off AlGaN/GaN FETs with high positive Vth of +5.64 V and the off-state leakage current as ~10<SUP>-6</SUP> A/mm.
Fabrication and Characterization of an OTFT-Based Biosensor Using a Biotinylated F8T2 Polymer
Sang Chul Lim,양용석,Seong Hyun Kim,Zin-Sig Kim,Doo-Hyeb Youn,Taehyoung Zyung,Ji Young Kwon,황도훈,김도진 한국전자통신연구원 2009 ETRI Journal Vol.31 No.6
Solution-processable organic semiconductors have been investigated not only for flexible and large-area electronics but also in the field of biotechnology. In this paper, we report the design and fabrication of biosensors based on completely organic thin-film transistors (OTFTs). The active material of the OTFTs is poly(9,9-dioctylfluorene-co-bithiophene) (F8T2) polymer functionalized with biotin hydrazide. The relationship between the chemoresistive change and the binding of avidin-biotin moieties in the polymer is observed in the output and on/off characteristics of the OTFTs. The exposure of the OTFTs to avidin causes a lowering of ID at VD = -40 V and VG = -40 V of nearly five orders of magnitude.