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Yujeong Shim,Jongbae Park,Jaemin Kim,Eakhwan Song,Jeongsik Yoo,Junso Pak,Joungho Kim IEEE 2009 IEEE transactions on electromagnetic compatibility Vol.51 No.3
<P>A new hybrid modeling method is proposed for the chip-package co-modeling and co-analysis. This method is designed to investigate the simultaneous switching noise (SSN) coupling paths and effects on the dc output voltage offset of the operational amplifier (OpAmp). It combines an analytical model of the circuit with a power distributed network (PDN) and interconnection models at the chip and package substrate. In order to validate the proposed model, CMOS OpAmp was fabricated using TSMC 0.25 mum. Then the dc output offset voltage of the OpAmp was measured by sweeping the SSN frequency from 10 MHz up to 3 GHz. It was successfully demonstrated that the experimental results are consistent with the predictions generated using the proposed model. We also confirmed that the dc offset voltage is strongly dependent on the SSN frequency and the PDN impedance profile of the chip-package hierarchical PDN. It shows the necessity for the chip-package co-modeling and simulation of the system-in-package designs.</P>
Wideband Suppression of Radiated Emissions from a Power Bus in High-Speed Printed Circuit Boards
Shim, Yujeong,Kim, Myunghoi The Korea Institute of Information and Commucation 2016 Journal of information and communication convergen Vol.14 No.3
We present experimental demonstrations of electromagnetic bandgap (EBG) structures for the wideband suppression of radiated emissions from a power bus in high-speed printed circuit boards (PCBs). In most of the PCB designs, a parallel plate waveguide (PPW) structure is employed for a power bus. This structure significantly produces the wideband-radiated emissions resulting from parallel plate modes. To suppress the parallel plate modes in the wideband frequency range, the power buses based on the electromagnetic bandgap structure with a defected ground structure (DGS) are presented. DGSs are applied to a metal plane that is connected to a rectangular EBG patch by using a via structure. The use of the DGS increases the characteristic impedance value of a unit cell, thereby substantially improving the suppression bandwidth of the radiated emissions. It is experimentally demonstrated that the DGS-EBG structure significantly mitigates the radiated emissions over the frequency range of 0.5 GHz to 2 GHz as compared to the PPW.
Kyoungchoul Koo,Yujeong Shim,Changwook Yoon,Jaemin Kim,Jeongsik Yoo,Jun So Pak,Joungho Kim IEEE 2010 IEEE TRANSACTIONS ON ADVANCED PACKAGING Vol.33 No.3
<P>In this paper, we analyze the power supply noise imbalance and its effects on simultaneous switching noise coupling to an ultra high frequency differential low noise amplifier (LNA) in a system-in-package (SiP) through an off-chip power distribution network (PDN). On and off-chip sources of power supply noise imbalance in a LNA in a SiP were analyzed. A simultaneous switching noise coupling coefficient for the differential LNA output caused by power supply noise imbalance was simulated through co-modeling a hierarchical on and off-chip PDN. The simulation results were validated by measuring the simultaneous switching noise coupling voltage at the differential LNA output. Further validation of four types of a LNA with different PDN designs demonstrates that simultaneous switching noise coupling to the differential LNA output caused by power supply noise imbalance highly depends on the design of the PDN of the SiP.</P>
An On-Chip Electromagnetic Bandgap Structure using an On-Chip Inductor and a MOS Capacitor
Chulsoon Hwang,Yujeong Shim,Kyoungchoul Koo,Myunghoi Kim,Jun So Pak,Joungho Kim IEEE 2011 IEEE microwave and wireless components letters Vol.21 No.8
<P>An on-chip electromagnetic bandgap (EBG) structure using a CMOS process is proposed. The proposed structure is the first EBG structure devised to suppress simultaneous switching noise coupling in an on-chip power distribution network (PDN). The on-chip EBG structure utilizes an on-chip inductor and a MOS capacitor to generate a stopband with a range of several GHz in an extremely small size; thus, the EBG structure can be embedded in on-chip PDNs. The proposed on-chip EBG structure was fabricated using a MagnaChip 0.18 μm CMOS process, and we successfully verified a 9.24 GHz stopband, from 1.26 to 10.5 GHz, with an isolation level of 50 dB.</P>
Chulsoon Hwang,Jaemin Kim,Eakhwan Song,Yujeong Shim,Joungho Kim IEEE 2011 IEEE transactions on electromagnetic compatibility Vol.53 No.1
<P>A wideband and compact partial electromagnetic bandgap (PEBG) structure and a corresponding stopband-estimation model are proposed for the suppression of simultaneous switching noise (SSN) coupling in a multilayer printed circuit board. The proposed PEBG structure achieves a wide stopband with a compact size by adopting a geometric arrangement of patches that allows for a periodic narrow via pitch (NVP). In addition, the lumped capacitance model of the previously reported effective phase constant equation is replaced with the resonant cavity model to obtain the precise impedance of the patch in high frequency. Finally, it was successfully verified that, by applying the NVP-PEBG structure, wideband suppression of SSN coupling to the signal via is achieved with a bandwidth of 11.2 GHz below -40 dB. The proposed estimation model was validated through experimental measurements.</P>
Myunghoi Kim,Kyoungchoul Koo,Chulsoon Hwang,Yujeong Shim,Joungho Kim,Jonghoon Kim IEEE 2012 IEEE transactions on electromagnetic compatibility Vol.54 No.3
<P>In this paper, we propose a compact and wideband electromagnetic bandgap (EBG) structure using a defected ground structure (DGS) to significantly enhance the wideband suppression of power/ground noise coupling in multilayer packages and printed circuit boards. The proposed EBG structure is implemented simply by adding a rectangular-shaped DGS which is etched periodically onto the ground plane without changing any other geometrical parameter from a mushroom-type EBG structure. The DGS effects on the f<SUB>L</SUB> and f<SUB>U</SUB> are thoroughly analyzed using the dispersion characteristics. We experimentally verified that the proposed EBG structure achieved the wideband power/ground noise suppression (below -40 dB) between 2.5 and 16.2 GHz. In addition, we demonstrated the considerable reduction in f<SUB>L</SUB> from 3.4 to 2.5 GHz and a significant increase in f<SUB>U</SUB> from 9.1 to 16.2 GHz when compared with the mushroom-type EBG structure.</P>