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RISS 인기검색어
- 검색키워드
- 저자 : Kyoungchoul Koo (검색결과 5 건)
- 무료
- 기관 내 무료
- 유료
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Kyoungchoul Koo,Yujeong Shim,Changwook Yoon,Jaemin Kim,Jeongsik Yoo,Jun So Pak,Joungho Kim IEEE 2010 IEEE TRANSACTIONS ON ADVANCED PACKAGING Vol.33 No.3
<P>In this paper, we analyze the power supply noise imbalance and its effects on simultaneous switching noise coupling to an ultra high frequency differential low noise amplifier (LNA) in a system-in-package (SiP) through an off-chip power distribution network (PDN). On and off-chip sources of power supply noise imbalance in a LNA in a SiP were analyzed. A simultaneous switching noise coupling coefficient for the differential LNA output caused by power supply noise imbalance was simulated through co-modeling a hierarchical on and off-chip PDN. The simulation results were validated by measuring the simultaneous switching noise coupling voltage at the differential LNA output. Further validation of four types of a LNA with different PDN designs demonstrates that simultaneous switching noise coupling to the differential LNA output caused by power supply noise imbalance highly depends on the design of the PDN of the SiP.</P>
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Myunghoi Kim,Kyoungchoul Koo,Chulsoon Hwang,Yujeong Shim,Joungho Kim,Jonghoon Kim IEEE 2012 IEEE transactions on electromagnetic compatibility Vol.54 No.3
<P>In this paper, we propose a compact and wideband electromagnetic bandgap (EBG) structure using a defected ground structure (DGS) to significantly enhance the wideband suppression of power/ground noise coupling in multilayer packages and printed circuit boards. The proposed EBG structure is implemented simply by adding a rectangular-shaped DGS which is etched periodically onto the ground plane without changing any other geometrical parameter from a mushroom-type EBG structure. The DGS effects on the f<SUB>L</SUB> and f<SUB>U</SUB> are thoroughly analyzed using the dispersion characteristics. We experimentally verified that the proposed EBG structure achieved the wideband power/ground noise suppression (below -40 dB) between 2.5 and 16.2 GHz. In addition, we demonstrated the considerable reduction in f<SUB>L</SUB> from 3.4 to 2.5 GHz and a significant increase in f<SUB>U</SUB> from 9.1 to 16.2 GHz when compared with the mushroom-type EBG structure.</P>
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Myunghoi Kim,Kyoungchoul Koo,Joungho Kim,Jiseong Kim IEEE 2012 IEEE microwave and wireless components letters Vol.22 No.8
<P>In this letter, we propose a vertical inductive bridge electromagnetic bandgap (VIB-EBG) structure for size reduction of a unit cell and the wideband suppression of simultaneous switching noise (SSN) in a multi-layer package. With the proposed vertical inductive bridge, the inductance of an EBG unit cell is effectivel increased within a compact unit cell size. Compared to the previous planar bridge EBG structure, the proposed VIB-EBG structure achieves an 86% enhancement of the fractional stopband bandwidth and a 58% reduction in unit cell size. The starting frequency of the first bandgap (f<SUB>L</SUB>) is significantly reduced from 4.0 to 1.7 GHz. Wideband SSN suppression with a size reduction was successfully verified by HFSS simulations and measurements.</P>
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Through-Silicon-Via-Based Decoupling Capacitor Stacked Chip in 3-D-ICs
Eunseok Song,Kyoungchoul Koo,Jun So Pak,Joungho Kim IEEE 2013 IEEE transactions on components, packaging, and ma Vol.3 No.9
<P>In this paper, a new decoupling capacitor stacked chip (DCSC) based on extra decoupling capacitors and through-silicon-vias (TSVs) is proposed to overcome the narrow-bandwidth limitation of the conventional decoupling capacitor solutions in three-dimensional-integrated circuits (3-D-ICs), as exhibited by expensive on-chip metal-oxide-semiconductor (MOS) decoupling capacitors and inductive off-chip discrete decoupling capacitors. In particular, in comparison to the on-chip decoupling solutions, such as MOS, metal-insulator-metal and deep trench capacitors, the proposed TSV-based DCSC represents several advantages, such as small leakage currents, large capacitances ranging from tens of nF to a few μF, low equivalent series inductance (ESL) with tens of pH, and high flexibility in TSV arrangements. The proposed TSV-based DCSC can be applied by mounting decoupling capacitors, such as Si-based MOS capacitors and discrete capacitors, on the backside of a chip and connecting the capacitors to the on-chip power delivery network (PDN) through TSVs. To demonstrate the performance of the proposed DCSC structure, a segmentation method was applied to compare the PDN impedance (Z11) of the TSV-based DCSC with those of the well-known conventional decoupling capacitor methods. The TSV-based DCSC was found to exhibit the advantages of both low on-chip level ESL (under several tens of pH) and high off-chip level capacitance (up to several μF). Additionally, the PDN impedance properties of the TSV-based DCSC were analyzed with respect to the variations in the number of power/ground TSV pairs, on-chip PDN size, and capacitance values of the stacked off-chip discrete decoupling capacitors using the segmentation method.</P>
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An On-Chip Electromagnetic Bandgap Structure using an On-Chip Inductor and a MOS Capacitor
Chulsoon Hwang,Yujeong Shim,Kyoungchoul Koo,Myunghoi Kim,Jun So Pak,Joungho Kim IEEE 2011 IEEE microwave and wireless components letters Vol.21 No.8
<P>An on-chip electromagnetic bandgap (EBG) structure using a CMOS process is proposed. The proposed structure is the first EBG structure devised to suppress simultaneous switching noise coupling in an on-chip power distribution network (PDN). The on-chip EBG structure utilizes an on-chip inductor and a MOS capacitor to generate a stopband with a range of several GHz in an extremely small size; thus, the EBG structure can be embedded in on-chip PDNs. The proposed on-chip EBG structure was fabricated using a MagnaChip 0.18 μm CMOS process, and we successfully verified a 9.24 GHz stopband, from 1.26 to 10.5 GHz, with an isolation level of 50 dB.</P>
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