http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Rapid Thermal Annealing에 의한 TiO_2 박막의 누설전류특성 향상
배근학,송영일,정동근,노용한 성균관대학교 기초과학연구소 1999 論文集 Vol.50 No.-
The CeO₂ intermediate layer was inserted by rf-sputter system between the TiO_2 layer and the Si substrate. TiO₂films were deposited by metal-organic chemical-vapor-deposition (MOCVD) on Si substrates. The thickness of TiO₂ was 20 nm), and that of CeO₂ was in the 3-65 nm regime. The insertion of the CeO₂ intermediate layer reduced the leakage current significantly after rapid thermal annealing (RTA) in O₂ ambient for 3 min. After HTA, the TiO₂/CeO₂/Si structure showed a significantly lower leakage current than the TiO₂/Si structure. The CeO₂ thickness of the TiO₂/CeO₂/Si structure did not affect leakage current reduction. The formation of the intermixed structure of TiO₂ and CeO₂ at the TiO₂/CeO₂ interface by RTA was thought to contribute to the reduction of the leakage current.
이병현,Yong-Il Kim,Bong-Soo Kim,Dong-Soo Woo,Yong-Jik Park,Dong-Gun Park,Si-Hyung Lee,Yonghan Rho 한국전기전자재료학회 2008 Transactions on Electrical and Electronic Material Vol.9 No.1
In this study, we investigated effects of hydrogen annealing (HA) and plasma nitridation (PN) applied in order to improve Si/SiO₂ interface characteristics of TiN metal gate. In result, HA and PN showed a positive effect decreasing number of interface state (Nit) respectively. After FN stress for verifying reliability, however, we identified rapid increase of Nit for TiN gate with HA, which is attributed to hydrogen related to a change of Si/SiO₂ interface characteristic. In contrast to HA, PN showed an improved Nit and gate oxide leakage characteristic due to several possible effects, such as blocking of Chlorine (Cl) diffusion and prevention of thermal reaction between TiN and SiO₂.