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Omura, Yasuhisa,Iida, Yukio,Urakawa, Fumio,Ogawa, Yoshifumi The Institute of Electronics and Information Engin 2007 Journal of semiconductor technology and science Vol.7 No.2
We propose and experimentally demonstrate a ring resonator with sharp U-turns fabricated on a silicon-on-insulator (SOI) substrate; the resonator was designed as a key part of an optical, dynamic data storage device. We discuss the optical properties of the fabricated ring resonator from the viewpoint of equi-frequency-contour behavior in a dispersion space. We successfully characterize its optical characteristics on the basis of photonic crystal physics. It is suggested that the photonic ring resonator will be applicable to optical, dynamic memory devices for optical communication systems.
Impact of Fin Aspect Ratio on Short-Channel Control and Drivability of Multiple-Gate SOI MOSFET's
Omura, Yasuhisa,Konishi, Hideki,Yoshimoto, Kazuhisa The Institute of Electronics and Information Engin 2008 Journal of semiconductor technology and science Vol.8 No.4
This paper puts forward an advanced consideration on the design of scaled multiple-gate FET (MuGFET); the aspect ratio ($R_{h/w}$) of the fin height (h) to fin width (w) of MuGFET is considered with the aid of 3-D device simulations. Since any change in the aspect ratio must consider the trade-off between drivability and short-channel effects, it is shown that optimization of the aspect ratio is essential in designing MuGFET's. It is clearly seen that the triple-gate (TG) FET is superior to the conventional FinFET from the viewpoints of drivability and short-channel effects as was to be expected. It can be concluded that the guideline of w < L/3, where L is the channel length, is essential to suppress the short-channel effects of TG-FET.
A New Basic Element for Neural Logic Functions and Capability in Circuit Applications
Omura, Yasuhisa The Institute of Electronics and Information Engin 2002 Journal of semiconductor technology and science Vol.2 No.1
This paper describes a new basic element which shows a synaptic operation for neural logic applications and shows function feasibility. A key device for the logic operation is the insulated-gate pn-junction device on SOI substrates. The basic element allows an interface quite compatible to that of conventional CMOS circuits and vMOS circuits.
Impact of Fin Aspect Ratio on Short-Channel Control and Drivability of Multiple-Gate SOI MOSFET’s
Yasuhisa Omura,Hideki Konishi,Kazuhisa Yoshimoto 대한전자공학회 2008 Journal of semiconductor technology and science Vol.8 No.4
This paper puts forward an advanced consideration on the design of scaled multiple-gate FET (MuGFET); the aspect ratio (Rh/w) of the fin height (h) to fin width (w) of MuGFET is considered with the aid of 3-D device simulations. Since any change in the aspect ratio must consider the trade-off between drivability and short-channel effects, it is shown that optimization of the aspect ratio is essential in designing MuGFET’s. It is clearly seen that the triple-gate (TG) FET is superior to the conventional FinFET from the viewpoints of drivability and short-channel effects as was to be expected. It can be concluded that the guideline of w < L/3, where L is the channel length, is essential to suppress the short-channel effects of TG-FET.
Aspects of Hard Breakdown Characteristics in a 2.2-nm-thick $SiO_2$ Film
Komiya, Kenji,Omura, Yasuhisa The Institute of Electronics and Information Engin 2002 Journal of semiconductor technology and science Vol.2 No.3
This paper mainly discusses the hard breakdown of 2.2-nm-thick $SiO_2$ films. It is shown that the hard breakdown event of a 2.2-nm-thick $SiO_2$ film greatly depends on the applied electric field. It is strongly suggested that the local weak spots created by applying a low initial stress to a 2.2-nm-thick $SiO_2$film resist the onset of hard breakdown. In other words, it is anticipated that the stored electrostatic energy is fast dissipated by trap-assisted tunneling in 2.2-nm-thick $SiO_2$ film. Consequently, it is strongly suggested that 2.2-nm-thick $SiO_2$ films are intrinsically quite robust.
Spectroscopic Characterization of Impact of Alcoholic Intake on Diversity of Blood-Pulse Waveform
Yasuhiro Shimizu,Yasuhisa Omura 제어로봇시스템학회 2009 제어로봇시스템학회 국제학술대회 논문집 Vol.2009 No.8
We spectroscopically investigate the impact of alcohol on blood-pulse waveform and confirm that alcohol intake can be discerned by various sensors. This paper focuses on specific spectra and demonstrates the importance of observing the harmonics ratio of the blood-pulse waveform. An analysis of the temporal evolution of the harmonic ratio shows that it includes important information that allows the intake of alcohol to be discerned.
Ogawa, Yoshifumi,Tamura, Issei,Omura, Yasuhisa,Iida, Yukio The Institute of Electronics and Information Engin 2007 Journal of semiconductor technology and science Vol.7 No.1
This paper describes physical meanings of various influences of cavity (or pillar) shape and filling factor of dielectric material on band structures in two-dimensional photonic crystals. Influences of circular and rectangular cross-sections of cavity (or pillar) arrays on photonic band structures are considered theoretically, and significant aspects of square and triangular lattices are compared. It is shown that both averaged dielectric constant of the photonic crystal and distribution profile of photon energy play important roles in designing optical properties. For the triangular lattice, especially, it is shown that cavity array with a rectangular cross-section breaks the band structure symmetry. So, we discuss this point from the band structure and address optical properties of lattice with a circular cross-section cavity.