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Reduced order model predictive control for constrained linear systems with disturbance attenuation
MasaakiTakahashi,Hideki Kokame,Keiji Konishi 제어로봇시스템학회 2009 제어로봇시스템학회 국제학술대회 논문집 Vol.2009 No.8
This paper deals with reduced order model predictive control for input-constrained discrete-time linear systems with disturbance attenuation. By introducing a decomposition technique for a quadratic cost functional, an MPC law is obtained from are duced order optimization problem. The fundamental properties of there sulting MPC law are discussed.
Investigation of Pyrolyzed Polyimide Thin Film as MEMS Material
Keisuke Naka,Hideki Nagae,Masao Ichiyanagi,Ok Chan Jeong,Satoshi Konishi 대한전자공학회 2005 Journal of semiconductor technology and science Vol.5 No.1
Pyrolyzed polyimide is explored in terms of MEMS material. This paper describes chemical, electrical, mechanical properties of pyrolyzed polyimide (PIX-1400) thin film as MEMS material. When polyimide thin film was pyrolyzed at 800 oC for 60 minutes in N2 ambient, the residual ratio of pyrolyzed film thickness measured with a surface profiler is about 49 %, and the resistivity is about 2.17×10-2 Ωcm. From the result of the load-deflection test, the estimated Young’s modulus and initial average stress of pyrolyzed polyimide are 67 GPa and 30 MPa, respectively. As one demonstration of MEMS structures of pyrolyzed polyimide, the fabrication method of the microbridge structure is proposed for a micro heater and a resonator.
Compensation law for constrained systems based on a decomposition of finite-horizon linear systems
Naoyuki Hara,Hideki Kokame,Keiji Konishi 제어로봇시스템학회 2009 제어로봇시스템학회 국제학술대회 논문집 Vol.2009 No.8
This paper considers a compensation law for constrained continuous-time linear systems. We introduce singular value decomposition(SVD) offinite-horizon linear systems and provide a compensation law which satisfies system constraints based on the SVD. The SVD allows us to construct basis functions consisting of dominant input-output signals where an auxiliary dynamical system is newly introduced so that it generates useful basis functions. The properties of the resulting system with compensation law are discussed, and the features of the proposed method are demonstrated by numerical examples.
Impact of Fin Aspect Ratio on Short-Channel Control and Drivability of Multiple-Gate SOI MOSFET's
Omura, Yasuhisa,Konishi, Hideki,Yoshimoto, Kazuhisa The Institute of Electronics and Information Engin 2008 Journal of semiconductor technology and science Vol.8 No.4
This paper puts forward an advanced consideration on the design of scaled multiple-gate FET (MuGFET); the aspect ratio ($R_{h/w}$) of the fin height (h) to fin width (w) of MuGFET is considered with the aid of 3-D device simulations. Since any change in the aspect ratio must consider the trade-off between drivability and short-channel effects, it is shown that optimization of the aspect ratio is essential in designing MuGFET's. It is clearly seen that the triple-gate (TG) FET is superior to the conventional FinFET from the viewpoints of drivability and short-channel effects as was to be expected. It can be concluded that the guideline of w < L/3, where L is the channel length, is essential to suppress the short-channel effects of TG-FET.
Impact of Fin Aspect Ratio on Short-Channel Control and Drivability of Multiple-Gate SOI MOSFET’s
Yasuhisa Omura,Hideki Konishi,Kazuhisa Yoshimoto 대한전자공학회 2008 Journal of semiconductor technology and science Vol.8 No.4
This paper puts forward an advanced consideration on the design of scaled multiple-gate FET (MuGFET); the aspect ratio (Rh/w) of the fin height (h) to fin width (w) of MuGFET is considered with the aid of 3-D device simulations. Since any change in the aspect ratio must consider the trade-off between drivability and short-channel effects, it is shown that optimization of the aspect ratio is essential in designing MuGFET’s. It is clearly seen that the triple-gate (TG) FET is superior to the conventional FinFET from the viewpoints of drivability and short-channel effects as was to be expected. It can be concluded that the guideline of w < L/3, where L is the channel length, is essential to suppress the short-channel effects of TG-FET.
Investigation of Pyrolyzed Polyimide Thin Film as MEMS Material
Naka, Keisuke,Nagae, Hideki,Ichiyanagi, Masao,Jeong, Ok-Chan,Konishi, Satoshi The Institute of Electronics and Information Engin 2005 Journal of semiconductor technology and science Vol.5 No.1
Pyrolyzed polyimide is explored in terms of MEMS material. This paper describes chemical, electrical, mechanical properties of pyrolyzed polyimide (PIX-1400) thin film as MEMS material. When polyimide thin film was pyrolyzed at $800^{\circ}C$ for 60 minutes in $N_{2}$ ambient, the residual ratio of pyrolyzed film thickness measured with a surface profiler is about 49 %, and the resistivity is about $2.17{\times}10^{-2}\;{Omega}cm$. From the result of the load-deflection test, the estimated Young's modulus and initial average stress of pyrolyzed polyimide are 67 GPa and 30 MPa, respectively. As one demonstration of MEMS structures of pyrolyzed polyimide, the fabrication method of the microbridge structure is proposed for a micro heater and a resonator.