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Impact of Fin Aspect Ratio on Short-Channel Control and Drivability of Multiple-Gate SOI MOSFET's
Omura, Yasuhisa,Konishi, Hideki,Yoshimoto, Kazuhisa The Institute of Electronics and Information Engin 2008 Journal of semiconductor technology and science Vol.8 No.4
This paper puts forward an advanced consideration on the design of scaled multiple-gate FET (MuGFET); the aspect ratio ($R_{h/w}$) of the fin height (h) to fin width (w) of MuGFET is considered with the aid of 3-D device simulations. Since any change in the aspect ratio must consider the trade-off between drivability and short-channel effects, it is shown that optimization of the aspect ratio is essential in designing MuGFET's. It is clearly seen that the triple-gate (TG) FET is superior to the conventional FinFET from the viewpoints of drivability and short-channel effects as was to be expected. It can be concluded that the guideline of w < L/3, where L is the channel length, is essential to suppress the short-channel effects of TG-FET.
Impact of Fin Aspect Ratio on Short-Channel Control and Drivability of Multiple-Gate SOI MOSFET’s
Yasuhisa Omura,Hideki Konishi,Kazuhisa Yoshimoto 대한전자공학회 2008 Journal of semiconductor technology and science Vol.8 No.4
This paper puts forward an advanced consideration on the design of scaled multiple-gate FET (MuGFET); the aspect ratio (Rh/w) of the fin height (h) to fin width (w) of MuGFET is considered with the aid of 3-D device simulations. Since any change in the aspect ratio must consider the trade-off between drivability and short-channel effects, it is shown that optimization of the aspect ratio is essential in designing MuGFET’s. It is clearly seen that the triple-gate (TG) FET is superior to the conventional FinFET from the viewpoints of drivability and short-channel effects as was to be expected. It can be concluded that the guideline of w < L/3, where L is the channel length, is essential to suppress the short-channel effects of TG-FET.